US5413982A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect transistor having c-axis channel layer
Assignee: Sumitomo Electric Industries Ltd
•
Filing: 1992-12-14
•
Granted: 1995-05-09
•
Expires: 2012-12-14
Abstract
Abstract A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, an extremely thin superconducting channel formed of a c-axis oriented oxide superconductor thin film on the non-superconducting oxide layer, a superconducting source region and a superconducting drain region formed of an a-axis oriented oxide superconductor thin film at the both sides of the superconducting channel separated from each other, which are electrically connected each other by the superconducting channel, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region, and a gate electrode of a material which includes silicon through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, in which the gate electrode is embedded between the superconducting source region and the superconducting drain region and is isolated from the superconducting source region and the superconducting drain region by an insulating region formed by diffused silicon from the gate electrode.
Inventors
- 👤 Hiroshi Inada
- 👤 So Tanaka
- 👤 Michitomo Iiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:53
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0661; H10N60/0688; H10N60/20; H10N60/205; H10N60/207; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/728
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
160 words
A superconducting device comprising: a substrate having a principal surface, a non-superconducting oxide layer having a crystal structure similar to that of an overlying c-axis oriented oxide superconducting channel, an overlying, c-axis oriented superconducting channel, a-axis oriented, compound oxide superconducting source and drain regions at each end of the superconducting channel, the source and drain regions being electrically connected to each other by the superconducting channel, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region, the superconducting channel being of a thickness such that a complete ON/OFF operation is obtained, a gate insulator positioned between the superconducting channel and an overlying gate electrode, and a gate electrode of a material which includes silicon, the gate electrode being embedded between the superconducting source region and the superconducting drain region and being isolated from the superconducting source region and the superconducting drain region by insulating regions of compound oxide containing silicon.
Claim 2
Dependent Claim
160 words
A superconducting device comprising: a substrate having a principal surface, a non-superconducting oxide layer having a crystal structure similar to that of an overlying c-axis oriented oxide superconducting channel, an overlying, c-axis oriented superconducting channel, a-axis oriented, compound oxide superconducting source and drain regions at each end of the superconducting channel, the source and drain regions being electrically connected to each other by the superconducting channel, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region, the superconducting channel being of a thickness such that a complete ON/OFF operation is obtained, a gate insulator positioned between the superconducting channel and an overlying gate electrode, and a gate electrode of a material which includes silicon, the gate electrode being embedded between the superconducting source region and the superconducting drain region and being isolated from the superconducting source region and the superconducting drain region by insulating regions of compound oxide containing silicon.
Claim 3
Dependent Claim
29 words
A superconducting device as claimed in claim 1, wherein the non-superconducting oxide layer has a similar crystal structure to that of the overlying c-axis oriented oxide superconductor thin film.
Claim 4
Dependent Claim
27 words
A superconducting device as claimed in claim 2, wherein the non-superconducting oxide layer is formed of a Pr 1 Ba 2 Cu 3 O 7-g thin film.
Claim 5
Dependent Claim
33 words
A superconducting device as claimed in claim 1, wherein the gate electrode is formed of a material selected from the group consisting of polycrystalline silicon, single crystalline silicon or silicide of a metal.
Claim 6
Dependent Claim
22 words
A superconducting device as claimed in claim 1, wherein the oxide superconductor is formed of high-T c (high critical temperature) oxide superconductor.
Claim 7
Dependent Claim
43 words
A superconducting device as claimed in claim 5, wherein the oxide superconductor is formed of oxide superconductor material selected from the group consisting of a Y-Ba-Cu-O compound oxide superconductor material, a Bi-Sr-Ca-Cu-O compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O compound oxide superconductor material.
Claim 8
Dependent Claim
41 words
A superconducting device as claimed in claim 1, wherein the substrate is formed of a material selected from the group consisting of a MgO (100) substrate, a SrTiO 3 (100) substrate and a CdNdAlO 4 (001) substrate, and a semiconductor substrate.
Claim 9
Dependent Claim
47 words
A superconducting device as claimed in claim 7, wherein the substrate is formed of a silicon substrate and a principal surface of the silicon substrate is coated with an insulating material layer which is formed of a MgAl 2 O 4 layer and a BaTiO 3 layer.
Claim 10
Dependent Claim
22 words
A superconducting device as claimed in claim 1, wherein the oxide superconductor is formed of high-T c copper-oxide type compound oxide superconductor.
Claim 11
Dependent Claim
21 words
A superconducting device as claimed in claim 1, wherein the superconducting channel has a thickness of less than about 5 nanometers.
Claim 12
Dependent Claim
21 words
A superconducting device claimed in claim 10, wherein the gate insulating region has a thickness of about 10 to 20 nanometers.
Claim 13
Dependent Claim
32 words
A superconducting device as claimed in claim 1, wherein an interface between the insulating regions of compound oxide containing silicon and the superconducting source and drain regions has a smooth, curved profile.
Claim 14
Dependent Claim
20 words
A superconducting device as claimed in claim 12, wherein the curved profile is curved outwardly, relative to the gate electrode.
Claim 15
Dependent Claim
194 words
A superconducting device comprising: a substrate, a non-superconducting oxide layer having a crystal structure similar to that of an overlying, c-axis oriented oxide superconducting channel, a c-axis oriented superconducting channel, a-axis oriented, compound oxide superconducting source and drain regions at each end of the superconducting channel, the source and drain regions being electrically connected to each other by the superconducting channel, so that superconducting current can flow through the superconducting channel between the superconducting source and drain regions, the superconducting channel being of a thickness such that a complete ON/OFF operation is obtained, a gate insulator positioned between the superconducting channel and an overlying gate electrode, a gate electrode of a material which includes silicon, the gate electrode being embedded between the superconducting source region and the superconducting drain region so that the superconducting device has a planar upper surface, and insulating regions of compound oxide superconductor containing silicon on either side of the gate electrode that isolate the gate electrode from the superconducting source and drain regions, wherein an interface between each of the insulating regions of compound oxide containing silicon and the superconducting source and drain regions has a smooth, curved profile.
Claim 16
Dependent Claim
194 words
A superconducting device comprising: a substrate, a non-superconducting oxide layer having a crystal structure similar to that of an overlying, c-axis oriented oxide superconducting channel, a c-axis oriented superconducting channel, a-axis oriented, compound oxide superconducting source and drain regions at each end of the superconducting channel, the source and drain regions being electrically connected to each other by the superconducting channel, so that superconducting current can flow through the superconducting channel between the superconducting source and drain regions, the superconducting channel being of a thickness such that a complete ON/OFF operation is obtained, a gate insulator positioned between the superconducting channel and an overlying gate electrode, a gate electrode of a material which includes silicon, the gate electrode being embedded between the superconducting source region and the superconducting drain region so that the superconducting device has a planar upper surface, and insulating regions of compound oxide superconductor containing silicon on either side of the gate electrode that isolate the gate electrode from the superconducting source and drain regions, wherein an interface between each of the insulating regions of compound oxide containing silicon and the superconducting source and drain regions has a smooth, curved profile.
Claim 17
Dependent Claim
20 words
A superconducting device as claimed in claim 14, wherein the curved profile is curved outwardly, relative to the gate electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-05-08 | 1998-11-07 | 1999-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-08 | 2002-11-07 | 2003-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-08 | 2006-11-07 | 2007-05-09 | $7700.00 | Window Closed / Lapsed |