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EP0506570A2
Expired / Lapsed
EP
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Method of forming compound oxide superconducting thin film
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1992-03-26
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Granted: —
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Expires: 2012-03-26
Abstract
Abstract A [100] oriented ZrO₂ thin film is formed on selected regions of a [100] deposition surface of a silicon substrate, and a Y₂O₃ thin film deposited on the ZrO₂ thin film and exposed regions of the deposition surface of the silicon substrate. A Y-Ba-Cu type compound oxide superconducting thin is deposited on the Y₂O₃ thin film. The Y-Ba-Cu type compound oxide superconducting thin film positioned above the ZrO₂ thin film is crystal-grown in a [001] orientation, and the Y-Ba-Cu type compound oxide superconducting thin film is crystal-grown in a [110] orientation in the other region.
Inventors
- 👤 Hidenori Nakanishi
- 👤 Shin-Ichi Shikata
- 👤 Hideo Itozaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 04:15
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/725; Y10S505/73; Y10S505/731
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
142 words
A method of forming on a silicon substrate a Cu-oxide type compound oxide superconducting thin film composed of [001] oriented crystal regions and [110] oriented crystal regions in a mixed condition, comprising the steps of forming a [100] oriented ZrO₂ thin film in a region on a [100] deposition surface of a silicon substrate, said region being to be finally formed with a [001] oriented Cu-oxide type compound oxide superconducting thin film, forming a Y₂O₃ thin film on said deposition surface of said silicon substrate and said ZrO₂ thin film, forming a Cu-oxide type compound oxide superconducting thin film on said Y₂O₃ thin film, said Cu-oxide type compound oxide superconducting thin film being crystal-grown in a [001] orientation above said ZrO₂ thin film, and said Cu-oxide type compound oxide superconducting thin film being crystal-grown in a [110] orientation in the other region.
Claim 2
Dependent Claim
56 words
A method claimed in Claim 1 further including, prior to said deposition of said ZrO₂ thin film, the step of cleaning said deposition surface of said silicon substrate by a dilute hydrofluoric acid liquid and heating said silicon substrate at a temperature not less than 900°C in a high vacuum of not greater than 10⁻⁶ Torr.
Claim 3
Dependent Claim
21 words
A method claimed in Claim 1 wherein said ZrO₂ thin film has a thickness in the range of 50Å to 300Å.
Claim 4
Dependent Claim
21 words
A method claimed in Claim 1 wherein said Y₂O₃ thin film has a thickness in the range of 300Å to 1000Å.
Claim 5
Dependent Claim
45 words
A method claimed in Claim 1 wherein said ZrO₂ thin film is formed by depositing a ZrO₂ thin film so as to cover the whole of said deposition surface of said silicon substrate, and patterning of said deposited ZrO₂ thin film into a desired pattern.
Claim 6
Dependent Claim
27 words
A method claimed in Claim 5 wherein said deposition of said ZrO₂ thin film is performed by a MBE process using a metal Zr as a target.
Claim 7
Dependent Claim
27 words
A method claimed in Claim 6 wherein said deposited ZrO₂ thin film is patterned by a reactive ion etching using a mixed gas of CF₄ and H₂.
Claim 8
Dependent Claim
27 words
A method claimed in Claim 1 wherein said deposition of said Y₂O₃ thin film is performed by a MBE process using a metal Y as a target.
Claim 9
Dependent Claim
46 words
A method claimed in Claim 1 wherein said Cu-oxide type compound oxide superconducting thin film is formed by depositing a Y-Ba-Cu type compound oxide superconducting material by use of a magnetron sputtering using as a target a compound oxide sintered body including Y, Ba and Cu.
References Cited (Backward Citations)
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