US5412608A
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Method of erasing data on non-volatile semi-conductor memory
Assignee: Renesas Electronics Corp
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Filing: 1993-11-12
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Granted: 1995-05-02
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Expires: 2013-11-12
Abstract
Abstract In order to suppress dispersion of threshold level voltages upon erasure of a large number of cells constituted from FETs having a floating gate electrode, drain electrode D, source electrode S and substrate Sub of each memory cell, all of the above electrodes are set to 0 V while a pulse of -19 V and a pulse width of 0.01 second is applied to control gate electrode CG to remove electrons accumulated in floating gate electrode FG by an F-N tunnel current. Then, while drain electrode D, source electrode S and substrate Sub are kept set to 0 V, another pulse of 14 V and a pulse width of 0.1 second is applied to control gate electrode CG to effect injection of electrons into floating gate electrode FG by the F-N tunnel current.
Inventors
- 👤 Ken-Ichi Oyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:55
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C16/3404; G11C16/3409
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
213 words
A method of erasing data on a non-volatile semi-conductor memory on which a plurality of n-type field effect transistors each having a source electrode, a drain electrode, a floating gate electrode and a control gate electrode are arrayed on a semi-conductor substrate as non-volatile memory cells and assuming that a low threshold voltage state is the erasing state and a high threshold voltage state is the writing state, comprising the steps of: applying, to the control gate electrode of each of the n-type field effect transistors, a first voltage negative to the substrate and the source and drain electrodes, for a first application time so that the threshold voltage of the field effect transistor having lowest data erasing operation speed by an F-N Fowler-Nordheim tunnel current becomes the nearest value of the writing state within a predetermined range in the data erasing state; and applying, to the control gate electrode of each of the n-type field effect transistors, a second voltage positive to the substrate and the source and drain electrodes, for a second application time so that the threshold voltage of the field effect transistor having highest data writing operation speed by the F-N tunnel current becomes the nearest value of the writing state within the range of the data erasing state.
Claim 2
Independent Claim
213 words
A method of erasing data on a non-volatile semi-conductor memory on which a plurality of n-type field effect transistors each having a source electrode, a drain electrode, a floating gate electrode and a control gate electrode are arrayed on a semi-conductor substrate as non-volatile memory cells and assuming that a low threshold voltage state is the erasing state and a high threshold voltage state is the writing state, comprising the steps of: applying, to the control gate electrode of each of the n-type field effect transistors, a first voltage negative to the substrate and the source and drain electrodes, for a first application time so that the threshold voltage of the field effect transistor having lowest data erasing operation speed by an F-N Fowler-Nordheim tunnel current becomes the nearest value of the writing state within a predetermined range in the data erasing state; and applying, to the control gate electrode of each of the n-type field effect transistors, a second voltage positive to the substrate and the source and drain electrodes, for a second application time so that the threshold voltage of the field effect transistor having highest data writing operation speed by the F-N tunnel current becomes the nearest value of the writing state within the range of the data erasing state.
Claim 3
Dependent Claim
73 words
A method of erasing data on a non-volatile semi-conductor memory as claimed in claim 1, wherein said first application time is 0.01 second, said first voltage is -19 volts relative to the substrate and the source and drain electrodes which are at 0 volts, said second application time is 0.1 second and said second voltage is ±14 volts relative to the substrate and the source and drain electrodes which are at 0 volts.
Claim 4
Dependent Claim
69 words
A method of erasing data on a non-volatile semiconductor memory as claimed in claim 1, wherein said first application time is 0.01 second, said first voltage is -14 volts while the substrate and the source and drain electrode are at +5 volts, said second application time is 0.1 second and said second voltage is +9 volts while the substrate and the source and drain electrodes are at -5 volts.
Claim 5
Independent Claim
215 words
A method of erasing data on a non-volatile semi-conductor memory on which a plurality of n-type filed effect transistors each having a source electrode, a drain electrode, a floating gate electrode and a control gate electrode are arrayed on a semi-conductor substrate as non-volatile memory cells and assuming that a low threshold voltage state is the writing state and a high threshold voltage state is the erasing state, comprising the steps of: applying, to the control gate electrode of each of the n-type field effect transistors, a first voltage positive the substrate and the source and drain electrode, for a first application time so that the threshold voltage of the field effect transistor having lowest data erasing operation speed by an F-N tunnel current becomes the nearest value of the writing state within a predetermined range in the data erasing state; and applying, to the control gate electrode of each of the n-type field effect transistors, a second voltage negative to the substrate and the source and drain electrodes, for a second application time so that the threshold level voltage of the field effect transistor which is highest in speed of data writing operation by the F-N tunnel current becomes the nearest value of the writing state within the range of the data erasing state.
Claim 6
Independent Claim
215 words
A method of erasing data on a non-volatile semi-conductor memory on which a plurality of n-type filed effect transistors each having a source electrode, a drain electrode, a floating gate electrode and a control gate electrode are arrayed on a semi-conductor substrate as non-volatile memory cells and assuming that a low threshold voltage state is the writing state and a high threshold voltage state is the erasing state, comprising the steps of: applying, to the control gate electrode of each of the n-type field effect transistors, a first voltage positive the substrate and the source and drain electrode, for a first application time so that the threshold voltage of the field effect transistor having lowest data erasing operation speed by an F-N tunnel current becomes the nearest value of the writing state within a predetermined range in the data erasing state; and applying, to the control gate electrode of each of the n-type field effect transistors, a second voltage negative to the substrate and the source and drain electrodes, for a second application time so that the threshold level voltage of the field effect transistor which is highest in speed of data writing operation by the F-N tunnel current becomes the nearest value of the writing state within the range of the data erasing state.
Claim 7
Independent Claim
165 words
A method of erasing data on a non-volatile semiconductor memory with a plurality of cells each having a control gate, a floating gate, a tunnel insultion film, a source and a drain area, and data are written by storing electrons in said floating gate through said tunnel insulation film and erased by taking out electrons stored in the floating gate through the tunnel insulation film, wherein said method of erasing data comprising the steps of: applying a first data erasing voltage to said control gate until a voltage that a threshold voltage of a cell having lowest data erasing operation speed in said non-volatile semiconductor memory becomes highest threshold voltage within the threshold voltages of data erasing state; applying a second erasing data voltage to said control gate for storing electrons in said floating gate until a voltage that a threshold voltage of a non-volatile memory cell having highest data erasing operation speed becomes highest threshold voltage within the threshold voltages of data erasing state.
Claim 8
Independent Claim
165 words
A method of erasing data on a non-volatile semiconductor memory with a plurality of cells each having a control gate, a floating gate, a tunnel insultion film, a source and a drain area, and data are written by storing electrons in said floating gate through said tunnel insulation film and erased by taking out electrons stored in the floating gate through the tunnel insulation film, wherein said method of erasing data comprising the steps of: applying a first data erasing voltage to said control gate until a voltage that a threshold voltage of a cell having lowest data erasing operation speed in said non-volatile semiconductor memory becomes highest threshold voltage within the threshold voltages of data erasing state; applying a second erasing data voltage to said control gate for storing electrons in said floating gate until a voltage that a threshold voltage of a non-volatile memory cell having highest data erasing operation speed becomes highest threshold voltage within the threshold voltages of data erasing state.
Claim 9
Dependent Claim
43 words
A method of erasing data on a non-volatile semiconductor memory as claimed in claim 5, wherein said first data erasing voltage to apply to said control gate is negative and said second data erasing voltage to apply to said control gate is positive.
Claim 10
Independent Claim
188 words
A method of erasing data on a n-type non-volatile semiconductor memory with a plurality of cells each having a control gate, a floating gate, a tunnel insulation film, a source and drain area, and data are written by storing electrons in said floating gate through said tunnel insulation film and erased by taking out electrons stored in the floating gate through the tunnel insulation film, wherein said method of erasing data comprising the steps of: applying a first data erasing voltage to said control gate until a voltage that a threshold voltage of a cell having lowest data erasing operation speed in said non-volatile semiconductor memory becomes highest threshold voltage within the threshold voltages of data erasing state allowing a least Fowler-Nordheim current to pass the tunnel insulation film; and applying a second erasing data voltage to said control gate for storing electrons in said floating gate until a voltage that a threshold voltage of a non-volatile memory cell having highest data erasing operation speed becomes highest threshold voltage within the threshold voltage of data erasing state allowing a greatest Fowler-Nordheim current to pass said tunnel insulation film.
Claim 11
Independent Claim
188 words
A method of erasing data on a n-type non-volatile semiconductor memory with a plurality of cells each having a control gate, a floating gate, a tunnel insulation film, a source and drain area, and data are written by storing electrons in said floating gate through said tunnel insulation film and erased by taking out electrons stored in the floating gate through the tunnel insulation film, wherein said method of erasing data comprising the steps of: applying a first data erasing voltage to said control gate until a voltage that a threshold voltage of a cell having lowest data erasing operation speed in said non-volatile semiconductor memory becomes highest threshold voltage within the threshold voltages of data erasing state allowing a least Fowler-Nordheim current to pass the tunnel insulation film; and applying a second erasing data voltage to said control gate for storing electrons in said floating gate until a voltage that a threshold voltage of a non-volatile memory cell having highest data erasing operation speed becomes highest threshold voltage within the threshold voltage of data erasing state allowing a greatest Fowler-Nordheim current to pass said tunnel insulation film.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-05-01 | 1998-10-31 | 1999-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-01 | 2002-10-31 | 2003-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-01 | 2006-10-31 | 2007-05-02 | $7700.00 | Window Closed / Lapsed |