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US5411912A
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US
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Method of making a semiconductor device comprising lower and upper silicon layers as capacitor electrodes
Assignee: NEC Corp
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Filing: 1994-03-08
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Granted: 1995-05-02
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Expires: 2014-03-08
Abstract
Abstract In a semiconductor device comprising charge storage capacitors, each of which comprises a patterned electrode having electrode side and top surfaces, a dielectric film (22) on the side and top surfaces, and a covering electrode (23) on the dielectric film, the patterned electrode is composed of a lower silicon layer (26) having layer side and top surfaces and an upper silicon layer (27) lying on the layer side and top surfaces and having the electrode side and top surfaces. The dielectric film may be in direct contact with the electrode side and top surfaces. In this event, the lower silicon layer is preferably doped to a lower concentration between 10 15 and 10 18 atoms per cubic centimeter and the upper silicon layer, to a higher concentration between 10 18 and 10 20 atoms per cubic centimeter. Alternatively, a barrier metal film may be interposed between the dielectric film and the electrode side and top surfaces. In this event, each of the lower and the upper silicon layers is preferably doped to the lower concentration. More preferably, an amorphous silicon film is preliminarily deposited on micro-rough side and top surfaces of an underlying silicon layer to provide the upper silicon layer having smooth electrode side and top surfaces.
Inventors
- 👤 Mitsuru Sakamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 22:02
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
122 words
A method of manufacturing a semiconductor device comprising the steps of forming an insulator film on a substrate surface of a semiconductor substrate, selectively forming openings through said insulator film, patterning patterned electrodes on said insulator film with said patterned electrodes made to fill said openings, respectively, and forming charge storage capacitors by using said patterned electrodes, respectively, wherein said patterning step comprises the steps of patterning lower silicon layers on said insulator film with said lower silicon layers made to fill said openings, respectively, and with each of said lower silicon layers made to have layer side and top surfaces, and growing upper silicon layers by selectively growing polysilicon on the layer side and top surfaces of said lower silicon layers.
Claim 2
Independent Claim
122 words
A method of manufacturing a semiconductor device comprising the steps of forming an insulator film on a substrate surface of a semiconductor substrate, selectively forming openings through said insulator film, patterning patterned electrodes on said insulator film with said patterned electrodes made to fill said openings, respectively, and forming charge storage capacitors by using said patterned electrodes, respectively, wherein said patterning step comprises the steps of patterning lower silicon layers on said insulator film with said lower silicon layers made to fill said openings, respectively, and with each of said lower silicon layers made to have layer side and top surfaces, and growing upper silicon layers by selectively growing polysilicon on the layer side and top surfaces of said lower silicon layers.
Claim 3
Dependent Claim
32 words
A method as claimed in claim 1, wherein said growing step is carried out by selective epitaxial growth of polysilicon on the layer side and top surfaces of said lower silicon layers.
Claim 4
Dependent Claim
68 words
A method as claimed in claim 2, each of said patterned electrodes having electrode side and top surfaces, wherein said growing step is carried out to make each of said upper silicon layers have said electrode side and top surfaces, said charge storage capacitor forming step comprising the step of forming a dielectric film on the electrode side and top surfaces of each of said upper silicon layers.
Claim 5
Dependent Claim
38 words
A method as claimed in claim 3, wherein said dielectric film forming step is carried out to bring said dielectric film in direct contact with the electrode side and top surfaces of each of said upper silicon layers.
Claim 6
Dependent Claim
69 words
A method as claimed in claim 4, wherein said lower silicon layer patterning step is carried out to dope said lower silicon layers with a first impurity to a concentration between 10 15 and 10 18 atoms per cubic centimeter, said growing step being carried out to dope said upper silicon layers with a second impurity to a concentration between 10 18 and 10 20 atoms per cubic centimeter.
Claim 7
Dependent Claim
41 words
A method as claimed in claim 3, wherein said charge storage capacitor forming step comprises the step of forming a barrier metal film between said dielectric film and the electrode side and top surfaces of each of said upper silicon layers.
Claim 8
Dependent Claim
69 words
A method as claimed in claim 6, wherein said lower silicon layer patterning step is carried out to dope said lower silicon layers with a first impurity to a concentration between 10 15 and 10 18 atoms per cubic centimeter, said growing step being carried out to dope said upper silicon layers with a second impurity to a concentration between 10 15 and 10 18 atoms per cubic centimeter.
Claim 9
Dependent Claim
91 words
A method as claimed in claim 7, wherein said growing step comprises the steps of growing underlying silicon layers by selective epitaxial growth of polysilicon on the layer side and top surfaces of said lower silicon layers with each of said underlying silicon layers inevitably given micro-rough side and top surfaces and depositing an amorphous silicon film on the micro-rough side and top surfaces of each of said underlying silicon layers with said amorphous silicon film made to have smooth side and top surfaces as said electrode side and top surfaces.
Claim 10
Dependent Claim
39 words
A method as claimed in claim 8, wherein said amorphous silicon film forming step is carried out by depositing said amorphous silicon film on said micro-rough side and top surfaces to a film thickness between 100 and 5000 Å.
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