Patent US5410159A successfully refreshed from Google Patents.
US5410159A
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US
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Light-emitting diode
Assignee: Toshiba Corp
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Filing: 1993-09-30
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Granted: 1995-04-25
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Expires: 2013-09-30
Abstract
Abstract A light-emitting diode, in which light is emitted from a side opposite to a substrate, includes a compound semiconductor substrate of a first conductivity type, a lower cladding layer formed on the substrate end consisting of InGaAlP of the first conductivity type, a light-emitting layer formed on the lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and eight or more quantum well layers, and an upper cladding layer formed on the light-emitting layer and consisting of InGaAlP of a second conductivity type.
Inventors
- 👤 Hideto Sugawara
- 👤 Kazuhiko Itaya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:12
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/30; H01S5/34; H01S5/343; H01S5/34326; H10H20/811; H10H20/812
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
100 words
A light-emitting diode comprising: a compound semiconductor substrate of a first conductivity type; a lower cladding layer formed on said compound semiconductor substrate and essentially consisting of InGaAlP of said first conductivity type; a light-emitting layer formed on said lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and 10 to 19 quantum well layers; and and upper cladding layer formed on said light-emitting layer and essentially consisting of InGaAlP of a second conductivity type, wherein light having emission wavelengths in the range of 590 to 620 nm is emitted from said light-emitting diode.
Claim 2
Dependent Claim
100 words
A light-emitting diode comprising: a compound semiconductor substrate of a first conductivity type; a lower cladding layer formed on said compound semiconductor substrate and essentially consisting of InGaAlP of said first conductivity type; a light-emitting layer formed on said lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and 10 to 19 quantum well layers; and and upper cladding layer formed on said light-emitting layer and essentially consisting of InGaAlP of a second conductivity type, wherein light having emission wavelengths in the range of 590 to 620 nm is emitted from said light-emitting diode.
Claim 3
Dependent Claim
46 words
A light-emitting diode according to claim 1, wherein said barrier layers essentially consist of InGaAlP, and an Al content of said barrier layers is lower than that of said upper and lower cladding layers which essentially consist of InGaAlP of said first and second conductivity types.
Claim 4
Dependent Claim
46 words
A light-emitting diode according to claim 1, wherein said quantum well layers essentially consist of IN 1-y (Ga 1-x Al x ) y (P 0≦x≦1 and 0≦y≦1), and said barrier layers essentially consist of IN 1-t (Ga 1-s Al s ) t P (x<s≦1 and 0<t≦1).
Claim 5
Dependent Claim
40 words
A light-emitting diode according to claim 1, wherein said compound semiconductor substrate essentially consists of GaAs, and said upper and lower cladding layers essentially consist of In 0 .5 (Ga 1-u Al u ) 0 .5 P, lattice-matched with GaAs.
Claim 6
Dependent Claim
29 words
A light-emitting diode according to claim 1, wherein a thickness of each of said quantum well layers is 0 to -3% smaller than that of said compound semiconductor substrate.
Claim 7
Dependent Claim
100 words
A light-emitting diode comprising: a compound semiconductor substrate of a first conductivity type; a lower cladding layer formed on said compound semiconductor substrate and essentially consisting of InGaAlP of said first conductivity type; a light-emitting layer formed on said lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and 20 to 80 quantum well layers; and and upper cladding layer formed on said light-emitting layer and essentially consisting of InGaAlP of a second conductivity type, wherein light having emission wavelengths in the range of 590 to 620 nm is emitted from said light-emitting diode.
Claim 8
Dependent Claim
100 words
A light-emitting diode comprising: a compound semiconductor substrate of a first conductivity type; a lower cladding layer formed on said compound semiconductor substrate and essentially consisting of InGaAlP of said first conductivity type; a light-emitting layer formed on said lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and 20 to 80 quantum well layers; and and upper cladding layer formed on said light-emitting layer and essentially consisting of InGaAlP of a second conductivity type, wherein light having emission wavelengths in the range of 590 to 620 nm is emitted from said light-emitting diode.
Claim 9
Dependent Claim
46 words
A light-emitting diode according to claim 6, wherein said barrier layers essentially consist of InGaAlP, and an Al content of said barrier layers is lower than that of said upper and lower cladding layers which essentially consist of InGaAlP of said first and second conductivity types.
Claim 10
Dependent Claim
46 words
A light-emitting diode according to claim 6, wherein said quantum well layers essentially consist of IN 1-y (Ga 1-x Al x ) y P (0≦x≦1 and 0≦y≦1), and said barrier layers essentially consist of IN 1-t (Ga 1-s Al s ) t P (x<s≦1 and 0<t≦1).
Claim 11
Dependent Claim
40 words
A light-emitting diode according to claim 6, wherein said compound semiconductor substrate essentially consists of GaAs, and said upper and lower cladding layers essentially consist of In 0 .5 (Ga 1-u Al u ) 0 .5 P, lattice-matched with GaAs.
Claim 12
Dependent Claim
29 words
A light-emitting diode according to claim 6, wherein a thickness of each of said quantum well layers is 0 to -3% smaller than that of said compound semiconductor substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-24 | 1998-10-24 | 1999-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-24 | 2002-10-24 | 2003-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-24 | 2006-10-24 | 2007-04-25 | $7700.00 | Window Closed / Lapsed |