US5409860A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a metal contact on a word line
Assignee: SK Hynix Inc
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Filing: 1993-07-14
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Granted: 1995-04-25
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Expires: 2013-07-14
Abstract
Abstract A metal contact is manufactured on a word line that is capable of isolating a metal from a semiconductor substrate by forming an active area having the injected impurity which is different from that of the semiconductor substrate formed on the semiconductor substrate of both sides of the word line.
Inventors
- 👤 Yong-Joo Jeon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:06
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/48; H10B12/485; H10D; H10D64/00; H10D64/01; H10D64/011; H10B12/482; H10B12/488
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
263 words
A method for manufacturing a metal contact on a word line in a strapping region comprising the steps of: forming a P-well area on a semiconductor substrate; forming a field oxide layer on a part of said P-well area; forming a gate oxide layer on said P-well area where said field oxide layer is not formed; forming a polysilicon layer over the entire surface; etching said polysilicon layer so that a word line formed; forming a N + active area by injecting an impurity on a part of said P-well using said word line as a mask; forming a first interpoly oxide layer over the entire surface; etching a part of said first interpoly oxide layer form a contact hole for both a word line and a bit line; forming a polysilicon layer over the entire surface and etching the region other than said word line contact hole and bit line contact hole for preparing a contact for a bit line and contact pad for the word line; forming a polycide layer on said contact pad formed in said word line contact hole simultaneously with forming a polycide layer for a bit line by using a depositing and an etching step; forming a second interpoly oxide layer over the entire surface; etching said second interpoly oxide layer in the region in which said word line is positioned so that a contact hole for a word line metal contact is formed; and forming a metal layer by depositing a metal in said contact hole so that said metal layer is connected to said polycide.
Claim 2
Independent Claim
263 words
A method for manufacturing a metal contact on a word line in a strapping region comprising the steps of: forming a P-well area on a semiconductor substrate; forming a field oxide layer on a part of said P-well area; forming a gate oxide layer on said P-well area where said field oxide layer is not formed; forming a polysilicon layer over the entire surface; etching said polysilicon layer so that a word line formed; forming a N + active area by injecting an impurity on a part of said P-well using said word line as a mask; forming a first interpoly oxide layer over the entire surface; etching a part of said first interpoly oxide layer form a contact hole for both a word line and a bit line; forming a polysilicon layer over the entire surface and etching the region other than said word line contact hole and bit line contact hole for preparing a contact for a bit line and contact pad for the word line; forming a polycide layer on said contact pad formed in said word line contact hole simultaneously with forming a polycide layer for a bit line by using a depositing and an etching step; forming a second interpoly oxide layer over the entire surface; etching said second interpoly oxide layer in the region in which said word line is positioned so that a contact hole for a word line metal contact is formed; and forming a metal layer by depositing a metal in said contact hole so that said metal layer is connected to said polycide.
Claim 3
Independent Claim
165 words
A method for manufacturing a metal contact on a word line in a strapping region comprising the steps of: forming a N - well area on a semiconductor substrate; forming a field oxide layer on a part of a P-well area; forming a gate oxide layer on said P-well area where said field oxide layer is not formed; forming a polysilicon layer over the entire surface; etching a part of said polysilicon layer so that a word line is formed; forming a N + active area by injecting an impurity on a part of said P-well using said word line as a mask; forming a interpoly oxide layer over the entire surface; etching a part of said interpoly oxide layer in order to form a contact hole for both a word line and a bit line; and forming a metal contact in said contact hole by depositing and partially etching a metal layer so that said metal layer is directly connected to said word line.
Claim 4
Independent Claim
165 words
A method for manufacturing a metal contact on a word line in a strapping region comprising the steps of: forming a N - well area on a semiconductor substrate; forming a field oxide layer on a part of a P-well area; forming a gate oxide layer on said P-well area where said field oxide layer is not formed; forming a polysilicon layer over the entire surface; etching a part of said polysilicon layer so that a word line is formed; forming a N + active area by injecting an impurity on a part of said P-well using said word line as a mask; forming a interpoly oxide layer over the entire surface; etching a part of said interpoly oxide layer in order to form a contact hole for both a word line and a bit line; and forming a metal contact in said contact hole by depositing and partially etching a metal layer so that said metal layer is directly connected to said word line.
Claim 5
Independent Claim
274 words
A method for manufacturing a metal contact on a word line in a strapping region comprising the steps of: forming an N - well area on a semiconductor substrate; forming a field oxide layer on a part of said N - well area; forming a gate oxide layer on said N - well area where said field oxide layer is not formed; forming a polysilicon later over the entire surface; etching said polysilicon layer so that a word line formed; forming a P + active area by injecting an impurity on a part of said N - well using said word line as a mask; forming a first interpoly oxide layer over the entire surface; etching a part of said first interpoly oxide layer so that a contact hole for both a word line and a bit line is formed; forming a polysilicon layer over the entire surface and etching the region other than said word line contact hole and bit line contact hole for preparing a contact for a bit line and contact pad for the word line; forming a polycide layer on said contact pad formed in said word line contact hole simultaneously with forming a polycide layer for a bit line by using a depositing and an etching step; forming a second interpoly oxide layer over the entire surface; etching said second interpoly oxide layer in the region in which said work line is positioned so that a contact, hole for a word line metal contact is formed; and forming a metal layer by depositing a metal in said contact hole so that said metal layer is connected to said polycide.
Claim 6
Independent Claim
274 words
A method for manufacturing a metal contact on a word line in a strapping region comprising the steps of: forming an N - well area on a semiconductor substrate; forming a field oxide layer on a part of said N - well area; forming a gate oxide layer on said N - well area where said field oxide layer is not formed; forming a polysilicon later over the entire surface; etching said polysilicon layer so that a word line formed; forming a P + active area by injecting an impurity on a part of said N - well using said word line as a mask; forming a first interpoly oxide layer over the entire surface; etching a part of said first interpoly oxide layer so that a contact hole for both a word line and a bit line is formed; forming a polysilicon layer over the entire surface and etching the region other than said word line contact hole and bit line contact hole for preparing a contact for a bit line and contact pad for the word line; forming a polycide layer on said contact pad formed in said word line contact hole simultaneously with forming a polycide layer for a bit line by using a depositing and an etching step; forming a second interpoly oxide layer over the entire surface; etching said second interpoly oxide layer in the region in which said work line is positioned so that a contact, hole for a word line metal contact is formed; and forming a metal layer by depositing a metal in said contact hole so that said metal layer is connected to said polycide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-24 | 1998-10-24 | 1999-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-24 | 2002-10-24 | 2003-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-24 | 2006-10-24 | 2007-04-25 | $7700.00 | Window Closed / Lapsed |