Patent US5409858A successfully refreshed from Google Patents.
US5409858A
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Method for optimizing thermal budgets in fabricating semiconductors
Assignee: Nanya Technology Corp
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Filing: 1993-08-06
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Granted: 1995-04-25
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Expires: 2013-08-06
Abstract
Abstract A method for fabricating semiconductors is provided in which a conformal layer is formed superjacent at least two conductive layers. The conformal layer has a thickness of at least 50 ANGSTROM . A barrier layer is then formed superjacent the conformal layer to prevent subsequent layers from diffusing into active regions. The barrier layer is preferably Si3N4. A glass layer is then formed superjacent the barrier layer. The glass layer has a thickness of at least 1 k ANGSTROM . The glass layer is heated to a temperature of at least 800 DEG C. for at least 15 minutes while introducing H2 and O2 at a high temperature to cause vaporization, thereby causing the glass layer to reflow. Next, the glass layer is exposed to a gas and radiant energy for 5 to 60 seconds, thereby making said glass layer planar. The radiant energy generates a temperature within the range of 700 DEG C. to 1250 DEG C. Further, the gas is at least one of N2, NH3, O2, N2O, Ar, Ar-H2, H2, GeH4, and a fluorine based gas.
Inventors
- 👤 Randir P. S. Thakur
- 👤 Fernando Gonzalez
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/662; H10P14/6922; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69394; H10P14/694; H10P14/6943; H10P14/69433; H10P95/00; H10P95/08; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6923; Y; Y10; Y10S; Y10S148/00; Y10S148/133
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
59 words
A method for fabricating a semiconductor, comprising the steps of: forming a glass layer superjacent a semiconductor substrate; heating said glass layer in the presence of steam, said glass layer is heated to a temperature of at least 800° C. for at least 15 minutes during said heating; and exposing said glass layer to a gas and radiant energy.
Claim 2
Independent Claim
59 words
A method for fabricating a semiconductor, comprising the steps of: forming a glass layer superjacent a semiconductor substrate; heating said glass layer in the presence of steam, said glass layer is heated to a temperature of at least 800° C. for at least 15 minutes during said heating; and exposing said glass layer to a gas and radiant energy.
Claim 3
Dependent Claim
29 words
A method for fabricating a semiconductor, according to claim 1, wherein said glass layer comprises at least one of SiO 2 , borophosphosilicate glass, phosphosilicate glass, and borosilicate glass.
Claim 4
Dependent Claim
45 words
A method for fabricating a semiconductor, according to claim 1, wherein said gas comprises at least one of N 2 , NH 3 , O 2 , N 2 O, Ar, Ar-H 2 , H 2 , GeH 4 , and a Fluorine based gas.
Claim 5
Dependent Claim
26 words
A method for fabricating a semiconductor, according to claim 1, wherein said radiant energy generates a temperature within the range of 700° C. to 1250° C.
Claim 6
Dependent Claim
45 words
A method for fabricating a semiconductor, according to claim 1, wherein said glass layer is exposed to said gas at a flow rate in the range of 50 sccm to 20,000 sccm and said radiant energy for 5 seconds to 60 seconds during said exposing.
Claim 7
Dependent Claim
22 words
A method for fabricating a semiconductor, according to claim 1, wherein said glass layer comprises a thickness of at least 1 kÅ.
Claim 8
Dependent Claim
22 words
A method for fabricating a semiconductor, according to claim 1, wherein said steam comprises vaporized H 2 O and OH - radicals.
Claim 9
Dependent Claim
41 words
A method for fabricating a semiconductor, according to claim 1, wherein said forming a glass layer superjacent a semiconductor substrate further comprises the step of: forming a conformal layer superjacent said semiconductor substrate; and forming said glass superjacent said conformal layer.
Claim 10
Dependent Claim
22 words
A method for fabricating a semiconductor, according to claim 8, wherein said conformal layer comprises a thickness of at least 50 Å.
Claim 11
Dependent Claim
34 words
A method for fabricating a semiconductor, according to claim 8, wherein said conformal layer comprises at least one of titanium nitride, tantalum nitride, titanium oxide, tantalum oxide, silicon dioxide, silicon nitride and tetraethylorthosilicate ("TEOS").
Claim 12
Dependent Claim
29 words
A method for fabricating a semiconductor, according to claim 8, further comprising the step of: forming a barrier layer superjacent said conformal layer prior to forming said glass layer.
Claim 13
Dependent Claim
20 words
A method for fabricating a semiconductor, according to claim 11, wherein said barrier layer comprises Si 3 N 4 .
Claim 14
Independent Claim
77 words
A method for fabricating a semiconductor, comprising the steps of: forming a glass layer superjacent a semiconductor substrate; heating said glass layer in the presence of steam, said glass layer is heated to a temperature of at least 800° C. for at least 15 minutes during said heating, said steam comprising vaporized H 2 O and OH - radicals, thereby causing said glass layer to reflow; and exposing said glass layer to a gas and radiant energy.
Claim 15
Independent Claim
77 words
A method for fabricating a semiconductor, comprising the steps of: forming a glass layer superjacent a semiconductor substrate; heating said glass layer in the presence of steam, said glass layer is heated to a temperature of at least 800° C. for at least 15 minutes during said heating, said steam comprising vaporized H 2 O and OH - radicals, thereby causing said glass layer to reflow; and exposing said glass layer to a gas and radiant energy.
Claim 16
Dependent Claim
30 words
A method for fabricating a semiconductor, according to claim 13, further comprising the step of: planarizing said glass layer upon exposing said glass layer to a gas and radiant energy.
Claim 17
Dependent Claim
29 words
A method for fabricating a semiconductor, according to claim 13, wherein said glass layer comprises at least one of SiO 2 , borophosphosilicate glass, phosphosilicate glass, and borosilicate glass.
Claim 18
Dependent Claim
26 words
A method for fabricating a semiconductor, according to claim 13, wherein said radiant energy generates a temperature within the range of 700° C. to 1250° C.
Claim 19
Dependent Claim
32 words
A method for fabricating a semiconductor, according to claim 13, wherein said radiant energy is generated by at least one of a rapid thermal processing source and a high density plasma source.
Claim 20
Dependent Claim
81 words
A method for fabricating a semiconductor, according to claim 13, wherein said gas comprises at least one of N 2 , NH 3 , O 2 , N 2 O, Ar, Ar-H 2 , H 2 , GeH 4 , and a Fluorine based gas, and said glass layer is exposed to said gas at a flow rate in the range of 50 sccm to 20,000 sccm and said radiant energy for approximately 5 seconds to 60 seconds during said exposing.
Claim 21
Dependent Claim
22 words
A method for fabricating a semiconductor, according to claim 13, wherein said glass layer comprises a thickness of at least 1 kÅ.
Claim 22
Dependent Claim
81 words
A method for fabricating a semiconductor, according to claim 13, wherein said forming a glass layer superjacent a semiconductor substrate further comprises the step of: forming a conformal layer superjacent said semiconductor substrate, said conformal layer comprising at least one of titanium nitride, tantalum nitride, titanium oxide, tantalum oxide, silicon dioxide, silicon nitride and tetraethylorthosilicate ("TEOS"); forming a barrier layer superjacent said conformal layer, said barrier layer comprising Si 3 N 4 ; and forming said glass superjacent said barrier layer.
Claim 23
Dependent Claim
22 words
A method for fabricating a semiconductor, according to claim 20, wherein said conformal layer comprises a thickness of at least 50 Å.
Claim 24
Independent Claim
221 words
A method for improving the activation of dopants in fabricating a semiconductor, comprising the steps of: forming a conformal layer superjacent at least two conductive layers, said conformal layer comprising at least one of titanium nitride, tantalum nitride, titanium oxide, tantalum oxide, silicon dioxide, silicon nitride, and tetraethylorthosilicate ("TEOS") and having a thickness of at least 50 Å; forming a barrier layer superjacent said conformal layer, said barrier layer comprising Si 3 N 4 ; forming a glass layer superjacent said barrier layer, said glass layer comprising at least one of SiO 2 , phosphosilicate glass, borosilicate glass, and borophosphosilicate glass, said glass layer comprising a thickness of at least 1 kÅ; heating said glass layer to a temperature of at least 800° C. for at least 15 minutes in the presence of steam, said steam comprising vaporized H 2 O, thereby causing said glass layer to reflow; and exposing said glass layer to a gas and radiant energy for 5 seconds to 60 seconds, said radiant energy generating a temperature within the range of 700° C. to 1250° C., and said gas comprising at least one of N 2 , NH 3 , O 2 , N 2 O, Ar, Ar-H 2 , H 2 , GeH 4 , and a Fluorine based gas, thereby making said glass layer planar.
Claim 25
Independent Claim
221 words
A method for improving the activation of dopants in fabricating a semiconductor, comprising the steps of: forming a conformal layer superjacent at least two conductive layers, said conformal layer comprising at least one of titanium nitride, tantalum nitride, titanium oxide, tantalum oxide, silicon dioxide, silicon nitride, and tetraethylorthosilicate ("TEOS") and having a thickness of at least 50 Å; forming a barrier layer superjacent said conformal layer, said barrier layer comprising Si 3 N 4 ; forming a glass layer superjacent said barrier layer, said glass layer comprising at least one of SiO 2 , phosphosilicate glass, borosilicate glass, and borophosphosilicate glass, said glass layer comprising a thickness of at least 1 kÅ; heating said glass layer to a temperature of at least 800° C. for at least 15 minutes in the presence of steam, said steam comprising vaporized H 2 O, thereby causing said glass layer to reflow; and exposing said glass layer to a gas and radiant energy for 5 seconds to 60 seconds, said radiant energy generating a temperature within the range of 700° C. to 1250° C., and said gas comprising at least one of N 2 , NH 3 , O 2 , N 2 O, Ar, Ar-H 2 , H 2 , GeH 4 , and a Fluorine based gas, thereby making said glass layer planar.
References Cited (Backward Citations)
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