Abstract The present invention relates to a static random access memory device, which has a precharge circuit for precharging bit lines to a predetermined voltage level in response to a precharge signal, a memory cell connected to a word line and bit lines for storing data, a word line selection address generating device for selecting the word line, a bit line selection address generating device for selecting the bit line, a read control circuit having a shaping circuit controlled by a read enable signal for shaping a level of the data, a latch device for latching the data of the bit line to keep a predetermined logic threshold voltage corresponding to the shaping means, and a write control circuit connected to the bit lines for supplying data to the memory cell. The latch device is provided in the read control circuit and includes NOR gates whose output signals are crossly applied. Each of the NOR gates receives data having the first logic state and data having the second logic state. The read control circuit thus latches data supplied from the bit lines, thereby accurately setting the logic threshold voltage of the inverter provided in the output terminal of the read control circuit. Accordingly, a stable operation can be performed even in low voltage and low frequency regions.
A static random access memory device comprising: precharge circuit means for precharging bit lines to a predetermined voltage level in response to a precharge signal; a memory cell connected to a word line and said bit lines for storing data; word line selection address generating means for selecting said word line; bit line selection address generating means for selecting said bit line; read control circuit means comprising: shaping means controlled by a read enable signal for shaping a level of said data; and latch means connected to said bit lines for latching said data of said bit lines during reading data to keep a predetermined logic threshold voltage corresponding to said shaping means; and write control circuit means connected to said bit lines for supplying said data to said memory cell.
Claim 2
Dependent Claim
131 words
A static random access memory device comprising: precharge circuit means for precharging bit lines to a predetermined voltage level in response to a precharge signal; a memory cell connected to a word line and said bit lines for storing data; word line selection address generating means for selecting said word line; bit line selection address generating means for selecting said bit line; read control circuit means comprising: shaping means controlled by a read enable signal for shaping a level of said data; and latch means connected to said bit lines for latching said data of said bit lines during reading data to keep a predetermined logic threshold voltage corresponding to said shaping means; and write control circuit means connected to said bit lines for supplying said data to said memory cell.
Claim 3
Dependent Claim
18 words
A static random access memory device as claimed in claim 1, wherein said shaping means comprises an inverter.
Claim 4
Dependent Claim
45 words
A static random access memory device as claimed in claim 1, wherein said latch means comprises NOR gates of which the output signals are being crossly applied, each of said NOR gates receiving said data having a first logic state and a second logic state.