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US5408432A
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Non-volatile semiconductor memory device
Assignee: NEC Corp
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Filing: 1993-10-01
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Granted: 1995-04-18
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Expires: 2013-10-01
Abstract
Abstract A non-volatile semiconductor memory device includes a sense amplifier (6) for detecting and outputting data of a memory cell comprising a non-volatile transistor (MO1, MO2), latch circuit (20) responsive to a latch signal for latching an output of the sense amplifier and inhibition means (10) responsive to a latch inhibition signal for inhibiting a latching operation of the latch circuit. With this construction of the memory device, correct data in the memory cell can be read without influence of noise in a circuit portion by detecting a verify mode automatically and monitoring a variation of a signal DO without using the latch circuit.
Inventors
- 👤 Kazuo Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:00
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/26; G11C16/28; G11C16/34; G11C16/3436; G11C16/3454; G11C16/3459; G11C16/3418; G11C16/3427
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
123 words
A non-volatile semiconductor memory device which is alternatingly supplied with a first voltage and a second voltage higher than said first voltage, said memory device comprising: a memory cell array composed of a plurality of memory cells, means responsive to a set of address signals for selecting at least one memory cell, a sense amplifier for sensing and outputting data stored in a selected memory cell, a latch circuit responsive to a latch signal for latching an output of said sense amplifier, a signal generator for generating a detecting signal when said second voltage is supplied to said memory device, and latch inhibiting means responsive to said detecting signal for inhibiting a latch operation of said latch circuit irrespective of said latch signal.
Claim 2
Dependent Claim
123 words
A non-volatile semiconductor memory device which is alternatingly supplied with a first voltage and a second voltage higher than said first voltage, said memory device comprising: a memory cell array composed of a plurality of memory cells, means responsive to a set of address signals for selecting at least one memory cell, a sense amplifier for sensing and outputting data stored in a selected memory cell, a latch circuit responsive to a latch signal for latching an output of said sense amplifier, a signal generator for generating a detecting signal when said second voltage is supplied to said memory device, and latch inhibiting means responsive to said detecting signal for inhibiting a latch operation of said latch circuit irrespective of said latch signal.
Claim 3
Dependent Claim
40 words
The non-volatile semiconductor memory device claimed in claim 1, wherein said first voltage is a reading-out voltage which is used in a normal read-out mode, and said second voltage is a verifying voltage which is used in a verify mode.
Claim 4
Dependent Claim
27 words
The non-volatile semiconductor memory device claimed in claim 1, wherein said latch inhibiting means includes a logic gate supplied with said latch signal and said detecting signal.
Claim 5
Dependent Claim
44 words
The non-volatile semiconductor memory device claimed in claim 1, wherein said latch circuit includes a clocked inverter supplied with an output of said sense amplifier and operable correspondingly to said latch signal, and a loop circuit for holding an output of said clock inverter.
Claim 6
Dependent Claim
110 words
A non-volatile semiconductor memory device having a first mode in which a data read operation is performed under a first power voltage and a second mode in which said data read operation is performed under a second power voltage that is larger than said first power voltage, comprising: a sense amplifier for detecting and outputting data of a selected memory cell comprising a non-volatile transistor; a latch circuit coupled to said sense amplifier; and means for allowing said latch circuit to latch an output of said sense amplifier in said first mode and for inhibiting said latch circuit from latching the output of said sense amplifier in said second mode.
Claim 7
Dependent Claim
110 words
A non-volatile semiconductor memory device having a first mode in which a data read operation is performed under a first power voltage and a second mode in which said data read operation is performed under a second power voltage that is larger than said first power voltage, comprising: a sense amplifier for detecting and outputting data of a selected memory cell comprising a non-volatile transistor; a latch circuit coupled to said sense amplifier; and means for allowing said latch circuit to latch an output of said sense amplifier in said first mode and for inhibiting said latch circuit from latching the output of said sense amplifier in said second mode.
Claim 8
Dependent Claim
33 words
The non-volatile semiconductor memory device claimed in claim 5, wherein said latch circuit operates as an inverter in said second mode to output an inverted signal of said output of said sense amplifier.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-17 | 1998-10-17 | 1999-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-17 | 2002-10-17 | 2003-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-17 | 2006-10-17 | 2007-04-18 | $7700.00 | Window Closed / Lapsed |