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US5408113A Expired / Lapsed US ⏱️ 0.0 years remaining

High sensitivity improved photoelectric imaging device with a high signal to noise ratio

Assignee: Ricoh Research Institute of General Electronics Co Ltd
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Filing: 1993-06-28
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Granted: 1995-04-18
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Expires: 2013-06-28
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Abstract

Abstract A photoelectric transfer device includes at least one photoelectric transfer cell having the following elements: A photoelectric transfer element generates a photoelectric current based on a quantity of incident light. An amplifier element includes first FET and functions as a source follower in which a source voltage of the first FET is varied so as to follow up a gate voltage thereof. A read unit outputs, as an output signal, the source voltage of the source follower. The photoelectric transfer element is connected to a gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element.

Inventors

  • 👤 Tohru Kanno
  • 👤 Yasuyuki Shindoh
  • 👤 Noriyuki Terao
  • 👤 Takeshi Nanjo
  • 👤 Atsuhiro Ohizumi
  • 👤 Yutaka Maita

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 05:34
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H04; H04N; H04N25/00; H04N25/70; H04N25/76; H04N25/77; H10F39/80; H10F39/802; H10F39/803

Claims Analysis

Total Claims: 51
Claim 1
Independent Claim 193 words
A photoelectric transfer device comprising: at least one photoelectric transfer cell; said at least one photoelectric transfer cell comprising: a photoelectric transfer element comprised of a photodiode generating a photoelectric current based on a quantity of incident light; an amplifier element including first FET of a normally on type and functioning as a source follower in which a source voltage of the first FET is varied so as to follow a gate voltage thereof and wherein said amplifier element is selected from the group of N channel or P channel and wherein when said amplifier element is a N channel an anode of said photodiode is connected to a gate of said amplifier element and when said amplifier element is a P channel, a cathode of said photodiode is connected to the gate of the amplifier element; and read means, coupled to said amplifier element, for outputting, as an output signal, the source voltage of the source follower, said photoelectric transfer element being connected to a gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element.
Claim 2
Dependent Claim 193 words
A photoelectric transfer device comprising: at least one photoelectric transfer cell; said at least one photoelectric transfer cell comprising: a photoelectric transfer element comprised of a photodiode generating a photoelectric current based on a quantity of incident light; an amplifier element including first FET of a normally on type and functioning as a source follower in which a source voltage of the first FET is varied so as to follow a gate voltage thereof and wherein said amplifier element is selected from the group of N channel or P channel and wherein when said amplifier element is a N channel an anode of said photodiode is connected to a gate of said amplifier element and when said amplifier element is a P channel, a cathode of said photodiode is connected to the gate of the amplifier element; and read means, coupled to said amplifier element, for outputting, as an output signal, the source voltage of the source follower, said photoelectric transfer element being connected to a gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element.
Claim 3
Dependent Claim 49 words
The photoelectric transfer device as claimed in claim 1, further comprising first initializing means, connected to the gate of the amplifier element, for initializing the gate voltage of the amplifier element to a predetermined potential after the source voltage is read as the output signal by the read means.
Claim 4
Dependent Claim 89 words
The photoelectric transfer device as claimed in claim 1, wherein: said photoelectric transfer element comprises a photodiode which includes a substrate, a well formed in the substrate, and a region formed in the well; the substrate and the region have a first conductivity, and the well has a second conductivity; said amplifier element further comprises a second FET of the second conductivity, and said second FET is formed in the substrate; and said well having the second conductivity includes as a part thereof the source of said amplifier element.
Claim 5
Dependent Claim 89 words
The photoelectric transfer device as claimed in claim 2, wherein: said photoelectric transfer element comprises a photodiode which includes a substrate, a well formed in the substrate, and a region formed in the well; the substrate and the region have a first conductivity, and the well has a second conductivity; said amplifier element further comprises a second FET of the second conductivity, and said second FET is formed in the substrate; and said well having the second conductivity includes as a part thereof the source of said amplifier element.
Claim 6
Dependent Claim 41 words
The photoelectric transfer device as claimed in claim 3, wherein: said read means comprises a third FET formed in said substrate; and said well of the second conductivity includes as a part thereof a source or drain of said third FET.
Claim 7
Dependent Claim 41 words
The photoelectric transfer device as claimed in claim 4, wherein: said read means comprises a third FET formed in said substrate; and said well of the second conductivity includes as a part thereof a source or drain of said third FET.
Claim 8
Dependent Claim 26 words
The photoelectric transfer device as claimed in claim 1, further comprising a second FET having a back gate connected to a source of said second FET.
Claim 9
Dependent Claim 26 words
The photoelectric transfer device as claimed in claim 2, further comprising a second FET having a back gate connected to a source of said second FET.
Claim 10
Dependent Claim 99 words
The photoelectric transfer device as claimed in claim 7, wherein: said photoelectric transfer element includes a photodiode which includes a substrate, a first well formed in the substrate, and a first region formed in the well; the substrate and the first region have a first conductivity, and a second well having a second conductivity; wherein said substrates second well in the substrate, and has a third well formed therein; said second well has a second conductivity, said third well has the first conductivity; and said amplifier element is further comprised of a second FET formed in said third well.
Claim 11
Dependent Claim 92 words
The photoelectric transfer device claimed in claim 8, wherein: said photoelectric transfer element includes a photodiode which includes a substrate, a first well formed in the substrate, and a first region formed in the well; the substrate and the first region have a first conductivity, and a second well having a second conductivity; wherein said substrates second well has a third well formed therein; said second well has a second conductivity, and said third well has the first conductivity; and said amplifier element is comprised of second FET formed in said well.
Claim 12
Dependent Claim 22 words
The photoelectric transfer device as claimed in claim 9, wherein said first well and said second well are unified in the substrate.
Claim 13
Dependent Claim 22 words
The photoelectric transfer device as claimed in claim 10, wherein said first well and said second well are unified in the substrate.
Claim 14
Dependent Claim 20 words
The photoelectric transfer device as claimed in claim 9, wherein said second well provides the source of said amplifier element.
Claim 15
Dependent Claim 20 words
The photoelectric transfer device as claimed in claim 10, wherein said second well provides the source of said amplifier element.
Claim 16
Dependent Claim 30 words
The photoelectric transfer device as claimed in claim 2, wherein said first initializing means comprises a second FET having a back gate connected to the source of said amplifier element.
Claim 17
Dependent Claim 30 words
The photoelectric transfer device as claimed in claim 15, wherein said back gate of said second FET includes a well formed in a substrate, said well corresponding to one pixel.
Claim 18
Dependent Claim 28 words
The photoelectric transfer device as claimed in claim 16, wherein said well functioning as the back gate of said second FET provides the source of said amplifier element.
Claim 19
Dependent Claim 25 words
The photoelectric transfer device as claimed in claim 16, wherein said well functioning as the back gate of said second FET has a predetermined conductivity.
Claim 20
Dependent Claim 35 words
The photoelectric transfer device as claimed in claim 15, wherein the back gate of said second FET and a back gate of said first FET are electrically connected to the source of said amplifier element.
Claim 21
Dependent Claim 31 words
The photoelectric transfer device as claimed in claim 19, wherein a back gate of said amplifier element includes a well formed in a substrate, said well corresponding to a single pixel.
Claim 22
Dependent Claim 49 words
The photoelectric transfer device as claimed in claim 20, wherein: said well includes said second FET of said first initializing means, said amplifier element and said photoelectric transfer element; and a source or drain of said second FET is unified with a conductive region of the photoelectric transfer element.
Claim 23
Dependent Claim 40 words
The photoelectric transfer device as claimed in claim 1, further comprising: a common signal line connected to said photoelectric transfer cell; and amplifier means, coupled to said common signal line, for amplifying the output signal from said photoelectric transfer cell.
Claim 24
Dependent Claim 27 words
The photoelectric transfer device as claimed in claim 22, wherein said amplifier means comprises hold means for holding the output signal for a predetermined period of time.
Claim 25
Dependent Claim 197 words
A photoelectric transfer device comprising: a plurality of photoelectric transfer cells connected in parallel; each of said photoelectric transfer cells comprising: a photoelectric transfer element comprised of a photodiode and generating a photoelectric current based on a quantity of incident light; an amplifier element including first FET of a normally on type and functioning as a source follower in which a source voltage of the first FET is varied so as to follow up a gate voltage thereof and wherein said amplifier element is selected from the group of N channel or P channel and wherein when said amplifier element is a N channel an anode of said photodiode is connected to a gate of said amplifier element and when said amplifier element is a P channel, a cathode of said photodiode is connected to the gate of the amplifier element; and read means, coupled to said amplifier element, for outputting, as an output signal, the source voltage of the source follower, said photoelectric transfer element being connected to a gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element.
Claim 26
Dependent Claim 197 words
A photoelectric transfer device comprising: a plurality of photoelectric transfer cells connected in parallel; each of said photoelectric transfer cells comprising: a photoelectric transfer element comprised of a photodiode and generating a photoelectric current based on a quantity of incident light; an amplifier element including first FET of a normally on type and functioning as a source follower in which a source voltage of the first FET is varied so as to follow up a gate voltage thereof and wherein said amplifier element is selected from the group of N channel or P channel and wherein when said amplifier element is a N channel an anode of said photodiode is connected to a gate of said amplifier element and when said amplifier element is a P channel, a cathode of said photodiode is connected to the gate of the amplifier element; and read means, coupled to said amplifier element, for outputting, as an output signal, the source voltage of the source follower, said photoelectric transfer element being connected to a gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element.
Claim 27
Dependent Claim 33 words
The photoelectric transfer device as claimed in claim 24, wherein said plurality of photoelectric transfer cells operate at different timings defined by a clock signal applied to the plurality of photoelectric transfer cells.
Claim 28
Dependent Claim 209 words
A photoelectric transfer device comprising: at least one photoelectric transfer cell; said at least one photoelectric transfer cell comprising a photoelectric transfer element comprised of a photodiode generating a photoelectric current based on a quantity of incident light; an amplifier element including a first FET of a normally-off type and functioning as a source follower in which a source voltage of said first FET is varied so as to follow a gate voltage thereof and wherein said amplifier element is selected from the group of N channel or P channel and when said amplifier element is a N channel an anode of said photodiode is connected to the gate of said amplifier element in which said amplifier element is a P channel a cathode of said photodiode is connected to the gate of the amplifier element; read means coupled to said amplifier element for outputting, as an output signal, a source voltage of the source follower; said photoelectric transfer element being connected to the gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element; and a means for supplying a reference voltage to the source of the amplifier element via a resistor.
Claim 29
Dependent Claim 209 words
A photoelectric transfer device comprising: at least one photoelectric transfer cell; said at least one photoelectric transfer cell comprising a photoelectric transfer element comprised of a photodiode generating a photoelectric current based on a quantity of incident light; an amplifier element including a first FET of a normally-off type and functioning as a source follower in which a source voltage of said first FET is varied so as to follow a gate voltage thereof and wherein said amplifier element is selected from the group of N channel or P channel and when said amplifier element is a N channel an anode of said photodiode is connected to the gate of said amplifier element in which said amplifier element is a P channel a cathode of said photodiode is connected to the gate of the amplifier element; read means coupled to said amplifier element for outputting, as an output signal, a source voltage of the source follower; said photoelectric transfer element being connected to the gate and source of the amplifier element so that a voltage between the gate and source of the amplifier element is applied across the photoelectric transfer element; and a means for supplying a reference voltage to the source of the amplifier element via a resistor.
Claim 30
Dependent Claim 49 words
The photoelectric transfer device as claimed in claim 26, further comprising first initializing means, connected to the gate of the amplifier element, for initializing the gate voltage of the amplifier element to a predetermined potential after the source voltage is read as the output signal by the read means.
Claim 31
Dependent Claim 89 words
The photoelectric transfer device as claimed in claim 26, wherein: said photoelectric transfer element comprises a photodiode which includes a substrate, a well formed in the substrate, and a region formed in the well; the substrate and the region have a first conductivity, and the well has a second conductivity; said amplifier element further comprises a second FET of the second conductivity, and said second FET is formed in the substrate; and said well having the second conductivity includes as a part thereof the source of said amplifier element.
Claim 32
Dependent Claim 89 words
The photoelectric transfer device as claimed in claim 27, wherein: said photoelectric transfer element comprises a photodiode which includes a substrate, a well formed in the substrate, and a region formed in the well; the substrate and the region have a first conductivity, and the well has a second conductivity; said amplifier element further comprises a second FET of the second conductivity, and said second FET is formed in the substrate; and said well having the second conductivity includes as a part thereof the source of said amplifier element.
Claim 33
Dependent Claim 41 words
The photoelectric transfer device as claimed in claim 28, wherein: said read means comprises a third FET formed in said substrate; and said well of the second conductivity includes as a part thereof a source or drain of said third FET.
Claim 34
Dependent Claim 41 words
The photoelectric transfer device as claimed in claim 29, wherein: said read means comprises a third FET formed in said substrate; and said well of the second conductivity includes as a part thereof a source or drain of said third FET.
Claim 35
Dependent Claim 26 words
The photoelectric transfer device as claimed in claim 26, further comprising: a second FET having a back gate connected to a source of said second FET.
Claim 36
Dependent Claim 26 words
The photoelectric transfer device as claimed in claim 27, further comprising: a second FET having a back gate connected to a source of said second FET.
Claim 37
Dependent Claim 98 words
The photoelectric transfer device as claimed in claim 32, wherein: said photoelectric transfer element includes a photodiode which includes a substrate, a first well formed in the substrate, and a first region formed in the well; the substrate and the first region have a first conductivity, and a second well having a second conductivity; wherein said substrates second well in the substrate, has a third well therein; said second well has a second conductivity, and said third well has the first conductivity; and said amplifier element is further comprised of a second FET formed in said third well.
Claim 38
Dependent Claim 95 words
The photoelectric transfer device as claimed in claim 33, wherein: said photoelectric transfer element includes a photodiode which includes a substrate, a first well formed in the substrate, and a first region formed in the well; the substrate and the first region have a first conductivity, and a second well having a second conductivity; wherein said substrates second well has a third well formed therein; said second well has a second conductivity, and said third well has the first conductivity; and said amplifier element is comprised of a second FET formed in said third well.
Claim 39
Dependent Claim 22 words
The photoelectric transfer device as claimed in claim 34, wherein said first well and said second well are unified in the substrate.
Claim 40
Dependent Claim 22 words
The photoelectric transfer device as claimed in claim 35, wherein said first well and said second well are unified in the substrate.
Claim 41
Dependent Claim 20 words
The photoelectric transfer device as claimed in claim 34, wherein said second well provides the source of said amplifier element.
Claim 42
Dependent Claim 20 words
The photoelectric transfer device as claimed in claim 35, wherein said second well provides the source of said amplifier element.
Claim 43
Dependent Claim 30 words
The photoelectric transfer device as claimed in claim 27, wherein said first initializing means comprises a second FET having a back gate connected to the source of said amplifier element.
Claim 44
Dependent Claim 30 words
The photoelectric transfer device as claimed in claim 40, wherein said back gate of said second FET includes a well formed in a substrate, said well corresponding to one pixel.
Claim 45
Dependent Claim 28 words
The photoelectric transfer device as claimed in claim 41, wherein said well functioning as the back gate of said second FET provides the source of said amplifier element.
Claim 46
Dependent Claim 25 words
The photoelectric transfer device as claimed in claim 41, wherein said well functioning as the back gate of said second FET has a predetermined conductivity.
Claim 47
Dependent Claim 35 words
The photoelectric transfer device as claimed in claim 40, wherein the back gate of said second FET and a back gate of said first FET are electrically connected to the source of said amplifier element.
Claim 48
Dependent Claim 31 words
The photoelectric transfer device as claimed in claim 44, wherein a back gate of said amplifier element includes a well formed in a substrate, said well corresponding to a single pixel.
Claim 49
Dependent Claim 49 words
The photoelectric transfer device as claimed in claim 45, wherein: said well includes said second FET of said first initializing means, said amplifier element and said photoelectric transfer element; and a source or drain of said second FET is unified with a conductive region of the photoelectric transfer element.
Claim 50
Dependent Claim 40 words
The photoelectric transfer device as claimed in claim 26, further comprising: a common signal line connected to said photoelectric transfer cell; and amplifier means, coupled to said common signal line, for amplifying the output signal from said photoelectric transfer cell.
Claim 51
Dependent Claim 27 words
The photoelectric transfer device as claimed in claim 47, wherein said amplifier means comprises hold means for holding the output signal for a predetermined period of time.

References Cited (Backward Citations)

JPS5925280A Cited
EP0177275A2 Cited
GB2194389A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-04-17 1998-10-17 1999-04-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-04-17 2002-10-17 2003-04-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-04-17 2006-10-17 2007-04-18 $7700.00 Window Closed / Lapsed

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