Patent US28873A successfully refreshed from Google Patents.
US5407526A
Expired / Lapsed
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Chemical mechanical polishing slurry delivery and mixing system
Assignee: Intel Corp
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Filing: 1993-06-30
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Granted: 1995-04-18
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Expires: 2013-06-30
Abstract
Abstract A method and apparatus for mixing and delivering a slurry polishing and etching a semiconductor device is described wherein the slurry chemicals are mixed at the point of use. An abrasive solution and a oxidant solution are stored in separate storage containers. When the polish/etch is to begin, each of the chemicals are pumped into a mixing chamber where they are mixed so as to form a slurry. The slurry is then immediately used to polish/etch a semiconductor device. Other chemicals may be added to the slurry during the polish/etch process so as to change the polish and/or the etch rate during the polish/etch process.
Inventors
- 👤 Donald D. Danielson
- 👤 Allen D. Feller
- 👤 Kenneth C. Cadien
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:24
CPC Classifications
B; B24; B24B; B24B37/00; B24B37/04
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
96 words
A method for slurry delivery and mixing for the chemical mechanical polishing of a semiconductor device having a top surface by a polishing pad having a polishing surface comprising the steps of: injecting an abrasive solution into a mixing area; injecting an oxidant solution into a mixing area such that said oxidant solution is mixed with said abrasive solution so as to forma slurry; and depositing said slurry such that said slurry contacts said polishing surface and such that said slurry contacts said top surface of said semiconductor device; and, chemical mechanical polishing said semiconductor device.
Claim 2
Independent Claim
96 words
A method for slurry delivery and mixing for the chemical mechanical polishing of a semiconductor device having a top surface by a polishing pad having a polishing surface comprising the steps of: injecting an abrasive solution into a mixing area; injecting an oxidant solution into a mixing area such that said oxidant solution is mixed with said abrasive solution so as to forma slurry; and depositing said slurry such that said slurry contacts said polishing surface and such that said slurry contacts said top surface of said semiconductor device; and, chemical mechanical polishing said semiconductor device.
Claim 3
Dependent Claim
40 words
The method of claim 1 wherein said top surface of said semiconductor device comprises tungsten and wherein a layer of insoluble oxide is formed over said top surface of said semiconductor device, said layer of insoluble oxide comprising tungsten oxide.
Claim 4
Dependent Claim
35 words
The method of claim 2 further comprising the step of selectively adding a base chemical to said slurry during said step of chemical mechanical polishing said substrate for accelerating the etch rate of said slurry.
Claim 5
Dependent Claim
22 words
The method of claim 3 wherein said base chemical comprises one of the group consisting of ethylenediamine, potassium hydroxide, and sodium hydroxide.
Claim 6
Dependent Claim
44 words
The method as described in claim 3 wherein at least a portion of said steps of injecting, and mixing said oxidant and said abrasive solutions, and said step of depositing said slurry occur during said step of chemical mechanical polishing of said semiconductor device.
Claim 7
Dependent Claim
34 words
The method of claim 2 further comprising the step of selectively adding an acid to said slurry during said step of chemical mechanical polishing said substrate for decelerating the etch rate of said slurry.
Claim 8
Dependent Claim
11 words
The method of claim 6 wherein said acid comprises acetic acid.
Claim 9
Dependent Claim
44 words
The method as described in claim 2 wherein at least a portion of said steps of injecting, and mixing said oxidant and said abrasive solutions, and said step of depositing said slurry occur during said step of chemical mechanical polishing of said semiconductor device.
Claim 10
Dependent Claim
12 words
The method of claim 1 wherein said oxidant solution comprises potassium ferricyanide.
Claim 11
Dependent Claim
11 words
The method of claim 1 wherein said abrasive solution comprises silica.
Claim 12
Dependent Claim
35 words
The method of claim 1 further comprising the step of selectively adding a base chemical to said slurry during said step of chemical mechanical polishing said substrate for accelerating the etch rate of said slurry.
Claim 13
Dependent Claim
34 words
The method of claim 11 further comprising the step of selectively adding an acid to said slurry during said step of chemical mechanical polishing said substrate for decelerating the etch rate of said slurry.
Claim 14
Dependent Claim
28 words
The method of claim 12 wherein said base chemical comprises one of the group consisting of ethylenediamine, potassium hydroxide, and sodium hydroxide and said acid comprises acetic acid.
Claim 15
Dependent Claim
44 words
The method as described in claim 13 wherein at least a portion of said steps of injecting, and mixing said oxidant and said abrasive solutions, and said step of depositing said slurry occur during said step of chemical mechanical polishing of said semiconductor device.
Claim 16
Dependent Claim
22 words
The method of claim 11 wherein said base chemical comprises one of the group consisting of ethylenediamine, potassium hydroxide, and sodium hydroxide.
Claim 17
Dependent Claim
44 words
The method as described in claim 11 wherein at least a portion of said steps of injecting, and mixing said oxidant and said abrasive solutions, and said step of depositing said slurry occur during said step of chemical mechanical polishing of said semiconductor device.
Claim 18
Dependent Claim
34 words
The method of claim 1 further comprising the step of selectively adding an acid to said slurry during said step of chemical mechanical polishing said substrate for decelerating the etch rate of said slurry.
Claim 19
Dependent Claim
11 words
The method of claim 17 wherein said acid comprises acetic acid.
Claim 20
Dependent Claim
44 words
The method as described in claim 17 wherein at least a portion of said steps of injecting, and mixing said oxidant and said abrasive solutions, and said step of depositing said slurry occur during said step of chemical mechanic, polishing of said semiconductor device.
Claim 21
Dependent Claim
44 words
The method as described in claim 1 wherein at least a portion of said steps of injecting, and mixing said oxidant and said abrasive solutions, and said step of depositing said slurry occur during said step of chemical mechanical polishing of said semiconductor device.
References Cited (Backward Citations)
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