US5406513A
Expired / Lapsed
US
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Mechanism for preventing radiation induced latch-up in CMOS integrated circuits
Assignee: UNM Rainforest Innovations
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Filing: 1993-02-05
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Granted: 1995-04-11
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Expires: 2013-02-05
Abstract
Abstract A CMOS circuit formed in a semiconductor substrate having improved immunity to radiation induced latch-up and improved immunity to a single event upset. The circuit architecture of the present invention can be utilized with N-Well, P-Well and dual Well processes. For example, the circuit is described relative to an N-Well process. An N-Well is formed in a p-type substrate. A network of p-channel transistors are formed in the N-Well and a network of n-channel transistors are formed in the p-type substrate. A continuous P+guard ring is formed surrounding the n-channel transistors and between the n-channel transistors and the N-Well. Similarly, a continuous N+guard ring is formed surrounding the p-channel transistors and between the p-channel transistors and the p-type substrate. In the event of a radiation hit, the guard rings operate to reduce the parasitic impedance in the collector circuits of the parasitic bipolars forming a parasitic SCR and also act as additional collectors of radiation induced current. Single event upset immunity is improved by forming duplicate functions in an n-channel network and a p-channel network. N-channel control transistors are coupled to control p-channel load transistors and p-channel control transistors are coupled to control n-channel load transistors.
Inventors
- 👤 John Canaris
- 👤 Sterling Whitaker
- 👤 Kelly Cameron
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 00:19
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/005; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/412; G11C11/4125; H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/854
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
231 words
A CMOS circuit formed in a semiconductor substrate having a circuit-bearing-surface with a p-type region and an n-type region, the circuit includes a Vdd power supply and a Vss power supply, the circuit having improved immunity to radiation induced latch-up and comprising: a. an n-channel transistor formed in the p-type region of the substrate having a source coupled to Vss; b. a p-channel transistor formed in the n-type region of the substrate having a drain coupled to the n-channel transistor and a source coupled to Vdd; c. a single p+guard formed between the n-channel transistor and the n-type region wherein the p+guard is electrically coupled to Vss; and d. a single n+guard formed between the p-channel transistor and the p-type region wherein the n+guard is electrically coupled to Vdd, the circuit further comprising means for improving immunity to a single event upset comprising: e. an n-channel network of devices for performing a function, the n-channel network having a plurality of n-channel control devices and a plurality of n-channel load devices; f. a p-channel network of devices for performing the function, the p-channel network having a plurality of p-channel control devices and a plurality of p-channel load devices; and g. means for cross coupling the n-channel network and the p-channel network such that an n-channel control device controls a p-channel load device and a p-channel control device controls an n-channel load device.
Claim 2
Dependent Claim
231 words
A CMOS circuit formed in a semiconductor substrate having a circuit-bearing-surface with a p-type region and an n-type region, the circuit includes a Vdd power supply and a Vss power supply, the circuit having improved immunity to radiation induced latch-up and comprising: a. an n-channel transistor formed in the p-type region of the substrate having a source coupled to Vss; b. a p-channel transistor formed in the n-type region of the substrate having a drain coupled to the n-channel transistor and a source coupled to Vdd; c. a single p+guard formed between the n-channel transistor and the n-type region wherein the p+guard is electrically coupled to Vss; and d. a single n+guard formed between the p-channel transistor and the p-type region wherein the n+guard is electrically coupled to Vdd, the circuit further comprising means for improving immunity to a single event upset comprising: e. an n-channel network of devices for performing a function, the n-channel network having a plurality of n-channel control devices and a plurality of n-channel load devices; f. a p-channel network of devices for performing the function, the p-channel network having a plurality of p-channel control devices and a plurality of p-channel load devices; and g. means for cross coupling the n-channel network and the p-channel network such that an n-channel control device controls a p-channel load device and a p-channel control device controls an n-channel load device.
Claim 3
Dependent Claim
28 words
The circuit according to claim 1 wherein the p+guard comprises a continuous region surrounding the p-type region and the n+guard comprises a continuous region surrounding the n-type region.
Claim 4
Dependent Claim
18 words
The circuit according to claim 1 wherein the p-type region is a well formed in an n-type substrate.
Claim 5
Dependent Claim
18 words
The circuit according to claim 1 wherein the n-type region is a well formed in an p-type substrate.
Claim 6
Dependent Claim
20 words
The circuit according to claim 1 wherein the p-type region and the n-type region are wells formed in the substrate.
Claim 7
Dependent Claim
39 words
The circuit according to claim 1 wherein the p-channel load transistors are designed to carry less current than the p-channel control transistors and wherein the n-channel load transistors are designed to carry less current than the n-channel control transistors.
Claim 8
Dependent Claim
242 words
The circuit according to claim 1 wherein the means for improving immunity to a single event upset further comprises: a. a first network of devices for performing a function, the first network having a plurality of p-channel control devices and plurality of first loads, each first load having a serially connected n-channel load device and a p-channel load device such that the p-channel load device is coupled between the n-channel load device and one of the p-channel control devices and wherein the p-channel control devices and the first loads are appropriately interconnected for performing a predetermined logic function; b. a second network of devices for performing a function, the first network having a plurality of n-channel control devices and plurality of second loads, each second load having a serially connected n-channel load device and a p-channel load device such that the n-channel load device is coupled between the p-channel load device and one of the n-channel control devices and wherein the n-channel control devices and the second loads are appropriately interconnected for performing the logic function; and c. means for cross coupling the first network and the second network such that an n-channel control device controls a p-channel load device in one of the first loads and an n-channel device in another of the first loads and a p-channel control device controls a p-channel load device in one of the second loads and an n-channel device in another of the second loads.
Claim 9
Dependent Claim
26 words
The circuit according to claim 7 wherein the n-channel load device and the p-channel load device in a load are either both conductive or both off.
Claim 10
Dependent Claim
252 words
A CMOS circuit formed in a semiconductor substrate having a first-doping-type, the circuit including a first and a second power supply, the circuit having improved immunity to radiation induced latch-up and comprising: a. a well formed in the substrate of a second-doping-type, wherein the second-doping-type is opposite polarity of the first-doping-type; b. a plurality of first-doping-type-channel transistors formed in the second-doping-type well each having an electrode electrically coupled to the first power supply; c. a plurality of second-doping-type-channel transistors formed in the substrate outside of the well each having an electrode electrically coupled to the second power supply; d. a single second-doping-type guard formed between the first-doping-type-channel transistors and the substrate, wherein the second-doping-type guard is electrically coupled to the first power supply; and e. a single first-doping-type guard formed between the second-doping-type-channel transistor and the well, wherein the first-doping type guard is electrically coupled to the second power supply, the circuit further comprising means for improving immunity to a single event upset comprising: f. a first-doping-type-channel network of devices for performing a function, the first-doping-type-channel network having a plurality of first-doping-type-channel control devices and a plurality of first-doping-type-channel load devices; g. a second-doping-type-channel network of devices for performing the function, the second-doping-type-channel network having a plurality of second-doping-type-channel control devices and a plurality of second-doping-type-channel load devices; and h. means for cross coupling the first-doping-type-channel network and the second-doping-type-channel network such that an first-doping-type-channel control device controls a second-doping-type-channel load device and a second-doping-type-channel control device controls and first-doping-type-channel load device.
Claim 11
Dependent Claim
252 words
A CMOS circuit formed in a semiconductor substrate having a first-doping-type, the circuit including a first and a second power supply, the circuit having improved immunity to radiation induced latch-up and comprising: a. a well formed in the substrate of a second-doping-type, wherein the second-doping-type is opposite polarity of the first-doping-type; b. a plurality of first-doping-type-channel transistors formed in the second-doping-type well each having an electrode electrically coupled to the first power supply; c. a plurality of second-doping-type-channel transistors formed in the substrate outside of the well each having an electrode electrically coupled to the second power supply; d. a single second-doping-type guard formed between the first-doping-type-channel transistors and the substrate, wherein the second-doping-type guard is electrically coupled to the first power supply; and e. a single first-doping-type guard formed between the second-doping-type-channel transistor and the well, wherein the first-doping type guard is electrically coupled to the second power supply, the circuit further comprising means for improving immunity to a single event upset comprising: f. a first-doping-type-channel network of devices for performing a function, the first-doping-type-channel network having a plurality of first-doping-type-channel control devices and a plurality of first-doping-type-channel load devices; g. a second-doping-type-channel network of devices for performing the function, the second-doping-type-channel network having a plurality of second-doping-type-channel control devices and a plurality of second-doping-type-channel load devices; and h. means for cross coupling the first-doping-type-channel network and the second-doping-type-channel network such that an first-doping-type-channel control device controls a second-doping-type-channel load device and a second-doping-type-channel control device controls and first-doping-type-channel load device.
Claim 12
Dependent Claim
34 words
The circuit according to claim 9 wherein the second-doping-type guard comprises a continuous region surrounding the well and the first-doping-type guard comprises a continuous region surrounding a portion of the substrate outside the well.
Claim 13
Dependent Claim
39 words
The circuit according to claim 9 wherein the second-doping-type-channel load transistors are designed to carry less current than the second-doping-type-channel control transistors and wherein the first-doping-type-channel load transistors are designed to carry less current than the first-doping-type-channel control transistors.
Claim 14
Dependent Claim
244 words
The circuit according to claim 11 wherein the means for improving immunity to a single event upset further comprises: a. a first network of devices for performing a function, the first network having a plurality of second-doping-type-channel control devices and plurality of first loads, each first load having a serially connected first-doping-type-channel load device and a second-doping-type-channel load device such that the second-doping-type-channel load device is coupled between the first-doping-type-channel load device and one of the second-doping-type-channel control devices and wherein the second-doping-type-channel control devices and the first loads are appropriately interconnected for performing a predetermined logic function; b. a second network of devices for performing a function, the second network having a plurality of first-doping-type-channel control devices and plurality of second loads, each second load having a serially connected first-doping-type-channel load device and a second-doping-type-channel load device such that the first-doping-type-channel load device is coupled between the second-doping-type-channel load device and one of the first-doping-type-channel control devices and wherein the first-doping-type-channel control devices and the second loads are appropriately interconnected for performing the logic function; and c. means for cross coupling the first network and the second network such that a first-doping-type-channel control device controls a first-doping-type-channel load device in one of the first loads and a second-doping-type-channel load device in another of the first loads and a second-doping-type-channel control device controls a first-doping-type-channel load device in one of the second loads and a second-doping-type-channel load device in another of the second loads.
Claim 15
Dependent Claim
26 words
The circuit according to claim 12 wherein the first-doping-type-channel load device and the second-doping-type-channel load device in a load are either both conductive or both off.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-10 | 1998-10-10 | 1999-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-10 | 2002-10-10 | 2003-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-10 | 2006-10-10 | 2007-04-11 | $7700.00 | Window Closed / Lapsed |