US5406099A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High electron mobility transistor
Assignee: Sony Corp
•
Filing: 1994-04-20
•
Granted: 1995-04-11
•
Expires: 2014-04-20
Abstract
Abstract A compound semiconductor device including a substrate; a first epitaxial layer formed on the substrate, the first epitaxial layer having an impurity concentration of 1×10 15 ≦p≦1×10 16 (cm -3 ); and a second epitaxial layer formed on the first epitaxial layer for allowing travel of two-dimensional electrons, the second epitaxial layer having an impurity concentration of n≦1×10 14 (cm -3 ) and p≦1×10 14 (cm -3 ). With the device disclosed, it is difficult for a short channel effect due to a reduction in gate length to occur, thereby ensuring high characteristics of the compound semiconductor device.
Inventors
- 👤 Shigeru Hiramatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:01
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/475; H10D30/4755; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6349
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
144 words
A HEMT compound semiconductor device, comprising: a substrate; a first epitaxial layer formed on said substrate, said first epitaxial layer having a p-type impurity concentration of 1×10 15 (cm -3 ); a second epitaxial layer formed on said first epitaxial layer for allowing travel of two-dimensional electrons in an electron channel located near an upper edge of said second epitaxial layer, said second epitaxial layer having an impurity concentration of n≦1×10 14 (cm -3 ) and p≦1×10 14 (cm -3 ); an intrinsic layer on the second epitaxial layer; an n-type electron supplying layer on the intrinsic layer; a gate electrode on the n-type electron supplying layer; and a source electrode connecting to the n-type electron supplying layer on one side of the gate electrode and a drain electrode connecting to the n-type electron supplying layer on the other side of the gate electrode.
Claim 2
Dependent Claim
144 words
A HEMT compound semiconductor device, comprising: a substrate; a first epitaxial layer formed on said substrate, said first epitaxial layer having a p-type impurity concentration of 1×10 15 (cm -3 ); a second epitaxial layer formed on said first epitaxial layer for allowing travel of two-dimensional electrons in an electron channel located near an upper edge of said second epitaxial layer, said second epitaxial layer having an impurity concentration of n≦1×10 14 (cm -3 ) and p≦1×10 14 (cm -3 ); an intrinsic layer on the second epitaxial layer; an n-type electron supplying layer on the intrinsic layer; a gate electrode on the n-type electron supplying layer; and a source electrode connecting to the n-type electron supplying layer on one side of the gate electrode and a drain electrode connecting to the n-type electron supplying layer on the other side of the gate electrode.
Claim 3
Dependent Claim
16 words
The semiconductor device according to claim 1 wherein the second epitaxial layer is formed of GaAs.
Claim 4
Dependent Claim
16 words
The semiconductor device according to claim 1 wherein the second epitaxial layer is formed of InGaAs.
Claim 5
Dependent Claim
36 words
The semiconductor device according to claim 1 wherein another n-type layer is provided on the n-type electron supplying layer between the source electrode and electron supplying layer and the drain electrode and the electron supplying layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-10 | 1998-10-10 | 1999-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-10 | 2002-10-10 | 2003-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-10 | 2006-10-10 | 2007-04-11 | $7700.00 | Window Closed / Lapsed |