US5405809A
Expired / Lapsed
US
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Semiconductor device, an image sensor device, and methods for producing the same
Assignee: Panasonic Holdings Corp
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Filing: 1994-06-23
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Granted: 1995-04-11
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Expires: 2014-06-23
Abstract
Abstract A semiconductor device according to the present invention includes: a light-transmitting substrate having a first surface and a second surface; a circuit conductor layer formed on the first surface of the light-transmitting substrate; a semiconductor chip having electrodes formed on a surface thereof, the semiconductor device being mounted face-down on the first surface of the light-transmitting substrate; a photo-thermal cross-linkable insulating resin layer for fixing the semiconductor chip on the light-transmitting substrate; a plated metal layer formed on at least a portion of the circuit conductor layer, the electrodes of the semiconductor chip being connected to the circuit conductor layer through the plated metal layer; an alloy layer formed in an abutting portion between each plated metal layer and the circuit conductor layer; and a second alloy layer formed in an abutting portion between each electrode and each plated metal layer, the alloy layers being formed by melting and recoagulating the plated metal layer upon the circuit conductor layer.
Inventors
- 👤 Tetsuro Nakamura
- 👤 Eiichiro Tanaka
- 👤 Shinji Fujiwara
- 👤 Masahiro Nakagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:31
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/50; H10W; H10W74/00; H10W74/01; H10W74/012; H10W74/10; H10W74/15; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/073; H10W72/07331; H10W72/07335; H10W72/07337; H10W72/07338; H10W72/20; H10W72/241; H10W72/251; H10W72/252; H10W72/851; H10W72/853; H10W72/856; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/734; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49128; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
180 words
A method for producing a semiconductor device comprising the steps of: forming a circuit conductor layer on a first surface of a light-transmitting substrate having the first surface and a second surface; forming a plated metal layer on at least a portion of the circuit conductor layer; forming a photo-thermal cross-linkable insulating resin layer on the first surface of the light-transmitting substrate; disposing a semiconductor chip having electrodes on a surface thereof face-down so that the electrodes are in contact with the plated metal layer; conducting a first curing step for curing the photo-thermal cross-linkable insulating resin by radiating ultra violet rays through the light-transmitting substrate from the second surface of the light-transmitting substrate while pressing the semiconductor chip against the light-transmitting substrate; and conducting a second curing step for further curing the photo-thermal cross-linkable insulating resin by heating the light-transmitting substrate with the semiconductor chip disposed thereon at a certain temperature for a period of time, the temperature being higher than the melting point of the plated metal layer and than the curing temperature of the photo-thermal cross-linkable resin.
Claim 2
Independent Claim
180 words
A method for producing a semiconductor device comprising the steps of: forming a circuit conductor layer on a first surface of a light-transmitting substrate having the first surface and a second surface; forming a plated metal layer on at least a portion of the circuit conductor layer; forming a photo-thermal cross-linkable insulating resin layer on the first surface of the light-transmitting substrate; disposing a semiconductor chip having electrodes on a surface thereof face-down so that the electrodes are in contact with the plated metal layer; conducting a first curing step for curing the photo-thermal cross-linkable insulating resin by radiating ultra violet rays through the light-transmitting substrate from the second surface of the light-transmitting substrate while pressing the semiconductor chip against the light-transmitting substrate; and conducting a second curing step for further curing the photo-thermal cross-linkable insulating resin by heating the light-transmitting substrate with the semiconductor chip disposed thereon at a certain temperature for a period of time, the temperature being higher than the melting point of the plated metal layer and than the curing temperature of the photo-thermal cross-linkable resin.
Claim 3
Dependent Claim
64 words
A method according to claim 1, wherein the second curing step further comprises a step for forming an alloy layer in an abutting portion between each plated metal layer and the circuit conductor layer and for forming a second alloy layer in an abutting portion between each plated metal layer and each electrode, the alloy layers being formed by melting the plated metal layer.
Claim 4
Dependent Claim
78 words
A method according to claim 1, wherein the semiconductor chip further comprises a metal bump formed on each electrode, and the second curing step further comprises a step for forming an alloy layer in an abutting portion between each plated metal layer and the circuit conductor layer and for forming a second alloy layer in an abutting portion between each metal bump and each plated metal layer, the alloy layers being formed by melting the plated metal layer.
Claim 5
Dependent Claim
23 words
A method according to claim 1, wherein the second curing step is conducted while the semiconductor chip is pressed against the light-transmitting substrate.
Claim 6
Dependent Claim
49 words
A method according to claim 1, wherein the step for forming the circuit conductor layer includes: a step for forming a conductor layer on the first surface of the light-transmitting substrate; and a step for forming the circuit conductor layer by patterning the conductor layer by a photolithography method.
Claim 7
Dependent Claim
32 words
A method according to claim 1, wherein the step for forming the circuit conductor layer is conducted by attaching a flexible printed wiring board to the first surface of the light-transmitting substrate.
Claim 8
Independent Claim
190 words
A method for producing an image sensor device comprising the steps of: forming a circuit conductor layer on a first surface of a light-transmitting substrate having the first surface and a second surface; forming a plated metal layer in at least a portion of the circuit conductor layer; forming a photo-thermal cross-linkable insulating resin layer on the first surface of the light-transmitting substrate; disposing an image sensor chip having electrodes and at least one light-sensitive element on a surface thereof face-down so that the electrodes are in contact with the plated metal layer; conducting a first curing step for curing the photo-thermal cross-linkable insulating resin by radiating ultra violet rays through the light-transmitting substrate from the second surface of the light-transmitting substrate while pressing the image sensor chip against the light-transmitting substrate; and conducting a second curing step for further curing the photo-thermal cross-linkable insulating resin by heating the light-transmitting substrate with the image sensor chip disposed thereon at a certain temperature for a period of time, the temperature being higher than the melting point of the plated metal layer and than the curing temperature of the photo-thermal cross-linkable resin.
Claim 9
Independent Claim
190 words
A method for producing an image sensor device comprising the steps of: forming a circuit conductor layer on a first surface of a light-transmitting substrate having the first surface and a second surface; forming a plated metal layer in at least a portion of the circuit conductor layer; forming a photo-thermal cross-linkable insulating resin layer on the first surface of the light-transmitting substrate; disposing an image sensor chip having electrodes and at least one light-sensitive element on a surface thereof face-down so that the electrodes are in contact with the plated metal layer; conducting a first curing step for curing the photo-thermal cross-linkable insulating resin by radiating ultra violet rays through the light-transmitting substrate from the second surface of the light-transmitting substrate while pressing the image sensor chip against the light-transmitting substrate; and conducting a second curing step for further curing the photo-thermal cross-linkable insulating resin by heating the light-transmitting substrate with the image sensor chip disposed thereon at a certain temperature for a period of time, the temperature being higher than the melting point of the plated metal layer and than the curing temperature of the photo-thermal cross-linkable resin.
Claim 10
Dependent Claim
64 words
A method according to claim 7, wherein the second curing step further comprises a step for forming an alloy layer in an abutting portion between each plated metal layer and the circuit conductor layer and for forming a second alloy layer in an abutting portion between each plated metal layer and each electrode, the alloy layers being formed by melting the plated metal layer.
Claim 11
Dependent Claim
78 words
A method according to claim 7, wherein the semiconductor chip further comprises a metal bump formed on each electrode, and the second curing step further comprises a step for forming an alloy layer in an abutting portion between each plated metal layer and the circuit conductor layer and for forming a second alloy layer in an abutting portion between each metal bump and each plated metal layer, the alloy layers being formed by melting the plated metal layer.
Claim 12
Dependent Claim
24 words
A method according to claim 7, wherein the second curing step is conducted while the image sensor chip is pressed against the light-transmitting substrate.
Claim 13
Dependent Claim
32 words
A method according to claim 7, wherein a sum total of the thickness of the light-transmitting substrate and the thickness of the photo-thermal cross-linkable insulating resin layer is 150 μm or less.
Claim 14
Dependent Claim
49 words
A method according to claim 7, wherein the step for forming the circuit conductor layer includes: a step for forming a conductor layer on the first surface of the light-transmitting substrate; and a step for forming the circuit conductor layer by patterning the conductor layer by a photolithography method.
Claim 15
Dependent Claim
39 words
A method according to claim 7, wherein the step for forming the circuit conductor layer includes a step for forming the circuit conductor layer by attaching a flexible printed wiring board to the first surface of the light-transmitting substrate.
Claim 16
Dependent Claim
37 words
A method according to claim 7, wherein the step for forming the circuit conductor layer includes a step for forming the circuit conductor layer on the first surface of the light-transmitting substrate by a thick-film printing method.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-10 | 1998-10-10 | 1999-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-10 | 2002-10-10 | 2003-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-10 | 2006-10-10 | 2007-04-11 | $7700.00 | Window Closed / Lapsed |