US5404125A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Infrared radiation sensor
Assignee: Terumo Corp
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Filing: 1992-07-17
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Granted: 1995-04-04
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Expires: 2012-07-17
Abstract
Abstract An infrared sensor comprising a sensor substrate formed of a semiconducting material and at least one set of infrared sensing portions formed one each on the opposite surfaces of said sensor substrate, wherein said infrared sensing portions are superposed one each on bride portions formed on cavities formed one each on the opposite surfaces of said sensor substrate.
Inventors
- 👤 Takehisa Mori
- 👤 Kiyoshi Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:10
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; G; G01; G01J; G01J5/00; G01J5/10; G01J5/20
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
43 words
An infrared radiation sensor comprising (i) a sensor substrate having opposite surfaces, said sensor substrate being formed of a semiconducting material, and (ii) at least one set of infrared radiation sensing portions formed on each of the opposite surfaces of said sensor substrate.
Claim 2
Dependent Claim
43 words
An infrared radiation sensor comprising (i) a sensor substrate having opposite surfaces, said sensor substrate being formed of a semiconducting material, and (ii) at least one set of infrared radiation sensing portions formed on each of the opposite surfaces of said sensor substrate.
Claim 3
Dependent Claim
56 words
The infrared radiation sensor according to claim 1, which further comprises at least one set of bridge portions on which each of said infrared radiation sensing portions are disposed thereon, said bridge portions each being disposed on a least one set of cavities which are formed on each of the opposite surfaces of said sensor substrate.
Claim 4
Dependent Claim
24 words
The infrared radiation sensor according to claim 2, wherein each of said infrared radiation sensing portions are coated with an infrared radiation absorbing film.
Claim 5
Dependent Claim
24 words
The infrared radiation sensor according to claim 2, wherein each of said bridge portions are formed of a film of an inorganic silicon compound.
Claim 6
Dependent Claim
31 words
The infrared radiation sensor according to claim 4, wherein said inorganic silicon compound is at least one compound selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.
Claim 7
Dependent Claim
16 words
The infrared radiation sensor according to claim 4, wherein said inorganic silicon compound is silicon oxynitride.
Claim 8
Dependent Claim
22 words
The infrared radiation sensor according to claim 4, wherein said inorganic silicon compound film has a thickness of 0.1 and 5 μm.
Claim 9
Dependent Claim
36 words
The infrared radiation sensor according to claim 1, wherein each of said infrared radiation sensing portions are formed of at least one member selected from the group consisting of amorphous germanium, amorphous silicon, and polycrystalline silicon.
Claim 10
Dependent Claim
23 words
The infrared radiation sensor according to claim 3, wherein each of said infrared radiation absorbing films are formed of gold black or carbon.
Claim 11
Dependent Claim
21 words
The infrared radiation sensor according to claim 3, wherein the infrared absorbing film has a thickness of 0.3 to 10 μm.
Claim 12
Dependent Claim
21 words
The infrared radiation sensor according to claim 3, wherein the infrared absorbing film has a thickness of 0.3 to 2 μm.
Claim 13
Dependent Claim
18 words
The infrared radiation sensor according to claim 2, wherein the sensor substrate is formed from silicon or germanium.
Claim 14
Dependent Claim
78 words
The infrared radiation sensor according to claim 4, wherein said inorganic silicon film has a thickness of 0.1 to 5 μm; said infrared sensing portions are formed of a material selected from the group consisting of amorphous germanium, amorphous silicon and polycrystalline silicon; said infrared sensing portions being coated with an infrared radiation absorbing film formed of a material selected from the group consisting of gold black and carbon and having a thickness of 0.3 to 2 μm.
Claim 15
Dependent Claim
37 words
The infrared radiation sensor according to claim 1, wherein for said at least one set of infrared radiation sensing portions, each of said infrared radiation sensing portions oppose each other and are longitudinally aligned with each other.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |