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US5403770A
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Method for forming a field oxide film in a semiconductor device
Assignee: SK Hynix Inc
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Filing: 1994-04-22
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Granted: 1995-04-04
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Expires: 2014-04-22
Abstract
Abstract A method for forming a field oxide film in a semiconductor device, wherein the field oxide film is integral with a nitride film disposed on an active region, thereby preventing spacers formed from being easily spread on the upper surface of the nitride film disposed on the active region even though they are subjected to a force from the field oxide film in oxidation of a silicon substrate. This structure also inhibits lateral diffusion of oxygen and thereby reduces the length of bird's beak formed. The method also enables accurate formation of a required dimension of spacers so that the dimension of bird's beak formed can be minimized. Also the method of the present invention solves the problem of a nitride film loss upon forming the spacers and enables an accurate adjustment of a trench depth. Accordingly, it is possible to form a field oxide film exhibiting a good element isolation characteristic required in a highly integrated semiconductor device.
Inventors
- 👤 Se A. Jang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
159 words
A method for forming a field oxide film in a semiconductor device, comprising the steps of: forming a pad oxide film, a first nitride film and an etch barrier film, in this order, over a semiconductor substrate; forming a second nitride film over the etch barrier film to a thickness identical to that of the first nitride film; marking a field region, then sequentially etching the second nitride film and the etch barrier film to a dimension resulting from the marking of the field region, and forming a deposition film for spacers thereover; etching the deposition film by use of a process for forming spacers and simultaneously etching the second nitride film and the first nitride film such that the pad oxide film is partially etched, thereby forming nitride film spacers; and forming a field oxide film in the field region by use of a thermal oxidation process and removing the remaining first nitride film and pad oxide film.
Claim 2
Independent Claim
159 words
A method for forming a field oxide film in a semiconductor device, comprising the steps of: forming a pad oxide film, a first nitride film and an etch barrier film, in this order, over a semiconductor substrate; forming a second nitride film over the etch barrier film to a thickness identical to that of the first nitride film; marking a field region, then sequentially etching the second nitride film and the etch barrier film to a dimension resulting from the marking of the field region, and forming a deposition film for spacers thereover; etching the deposition film by use of a process for forming spacers and simultaneously etching the second nitride film and the first nitride film such that the pad oxide film is partially etched, thereby forming nitride film spacers; and forming a field oxide film in the field region by use of a thermal oxidation process and removing the remaining first nitride film and pad oxide film.
Claim 3
Dependent Claim
35 words
A method in accordance with claim 1, wherein the pad oxide film, the first nitride film, and the etch barrier film have thicknesses of 50 to 300Å, 1,000 to 2,000Å, and 200 to 500Å, respectively.
Claim 4
Dependent Claim
25 words
A method in accordance with claim 1, wherein the etch barrier film is comprised of a polysilicon film or a chemical vapor deposition oxide film.
Claim 5
Dependent Claim
37 words
A method in accordance with claim 1, wherein the deposition film for the spacers is comprised of one of a chemical vapor deposition oxide film and a nitride film and has a thickness of 300 to 1,000Å.
Claim 6
Independent Claim
164 words
A method for forming a field oxide film in a semiconductor device, comprising the steps of: forming a pad oxide film, a polysilicon film, a first nitride film and an etch barrier film, in this order, over a semiconductor substrate; depositing a second nitride film over the etch barrier film to a thickness identical to that of the first nitride film; marking a field region, then sequentially etching the second nitride film and the etch barrier film to a dimension resulting from the marking of the field region, and forming a deposition film for spacers thereover; etching the deposition film by use of a process for forming spacers and simultaneously etching the second nitride film and the first nitride film such that the polysilicon film is partially etched, thereby forming nitride film spacers; and forming a field oxide film in the field region by use of a thermal oxidation process and removing the remaining first nitride film, the polysilicon film and pad oxide film.
Claim 7
Independent Claim
164 words
A method for forming a field oxide film in a semiconductor device, comprising the steps of: forming a pad oxide film, a polysilicon film, a first nitride film and an etch barrier film, in this order, over a semiconductor substrate; depositing a second nitride film over the etch barrier film to a thickness identical to that of the first nitride film; marking a field region, then sequentially etching the second nitride film and the etch barrier film to a dimension resulting from the marking of the field region, and forming a deposition film for spacers thereover; etching the deposition film by use of a process for forming spacers and simultaneously etching the second nitride film and the first nitride film such that the polysilicon film is partially etched, thereby forming nitride film spacers; and forming a field oxide film in the field region by use of a thermal oxidation process and removing the remaining first nitride film, the polysilicon film and pad oxide film.
Claim 8
Dependent Claim
41 words
A method in accordance with claim 5, wherein the pad oxide film, the polysilicon film, the first nitride film, and the etch barrier film have thicknesses of 50 to 300Å, 200 to 1,000Å, 1,000 to 2,000Å, and 200 to 500Å, respectively.
Claim 9
Independent Claim
188 words
A method for forming a field oxide film in a semiconductor device, comprising the steps of: sequentially forming a pad oxide film and a first nitride film over a semiconductor substrate; forming a polysilicon film over the first nitride film to a thickness corresponding to a depth of a trench to be subsequently formed in the semiconductor substrate; forming a second nitride film over the polysilicon film to a thickness identical to that of the first nitride film; marking a field region, then sequentially etching the second nitride film and the polysilicon film to a dimension resulting from the marking of the field region, and forming a deposition film for spacers thereover; etching the resulting structure downwards from the upper surface thereof until the portion of the pad oxide film in the field region is completely removed while the remaining polysilicon film is still maintained; forming a trench in the semiconductor substrate until the remaining polysilicon film is completely removed; and forming a field oxide film in the field region by use of a thermal oxidation process and removing the remaining first nitride film and pad oxide film.
Claim 10
Independent Claim
188 words
A method for forming a field oxide film in a semiconductor device, comprising the steps of: sequentially forming a pad oxide film and a first nitride film over a semiconductor substrate; forming a polysilicon film over the first nitride film to a thickness corresponding to a depth of a trench to be subsequently formed in the semiconductor substrate; forming a second nitride film over the polysilicon film to a thickness identical to that of the first nitride film; marking a field region, then sequentially etching the second nitride film and the polysilicon film to a dimension resulting from the marking of the field region, and forming a deposition film for spacers thereover; etching the resulting structure downwards from the upper surface thereof until the portion of the pad oxide film in the field region is completely removed while the remaining polysilicon film is still maintained; forming a trench in the semiconductor substrate until the remaining polysilicon film is completely removed; and forming a field oxide film in the field region by use of a thermal oxidation process and removing the remaining first nitride film and pad oxide film.
References Cited (Backward Citations)
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