US5403752A
Expired / Lapsed
US
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Method for manufacturing a pyrodetector apparatus
Assignee: Siemens AG
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Filing: 1994-05-13
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Granted: 1995-04-04
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Expires: 2014-05-13
Abstract
Abstract A method for manufacturing a pyrodetector apparatus having hole structures produced by electrochemical etching in a first principal face of a substrate of n-doped, monocrystalline silicon, so that a structured region arises in the substrate. At least one pyrodetector element is arranged on the first principal face above the structured region.
Inventors
- 👤 Rainer Bruchhaus
- 👤 Volker Lehmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:16
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; G02B6/1221; H; H10; H10N; H10N15/00; H10N15/10; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
55 words
A method for manufacturing a pyrodetector apparatus, comprising the steps of: forming hole structures in a substrate wafer of n-doped, monocrystalline silicon by electrochemical etching a first surface opposite a second surface, to produce a structured region in said substrate; and applying at least one pyrodetector element above said structured region of said first surface.
Claim 2
Independent Claim
55 words
A method for manufacturing a pyrodetector apparatus, comprising the steps of: forming hole structures in a substrate wafer of n-doped, monocrystalline silicon by electrochemical etching a first surface opposite a second surface, to produce a structured region in said substrate; and applying at least one pyrodetector element above said structured region of said first surface.
Claim 3
Dependent Claim
21 words
The method of claim 1, wherein said etching is further defined by performing said electrochemical etching in a fluoride-containing, acidic electrolyte.
Claim 4
Dependent Claim
28 words
The method of to claim 1, wherein the step of forming hole structures in a substrate wafer is further defined by forming hole structures in a (100) wafer.
Claim 5
Dependent Claim
32 words
The method of claim 1 comprising the additional step of: providing said first surface with a surface topology before said electrochemical etching, said surface topology defining an arrangement of said hole structures.
Claim 6
Dependent Claim
68 words
The method of claim 1, wherein said step of forming hole structures is further defined by implementing said electrochemical etching in a fluoride-containing, acidic electrolyte with which said first surface is in contact and applying an electrical voltage between said electrolyte and said substrate wafer wherein said substrate wafer is connected as an anode; and setting a current density that influences the etching erosion in said substrate wafer.
Claim 7
Dependent Claim
30 words
The method according to claim 5, wherein said setting of said current density is further defined by illuminating the second surface that lies opposite said first surface of said substrate.
Claim 8
Dependent Claim
23 words
The method according to claim 5, wherein said etching is further defined by providing said electrolyte with 1-50% by weight hydrofluoric acid (HF).
Claim 9
Dependent Claim
24 words
The method according to claim 5, wherein said etching is further defined by performing said etching with said electrolyte additionally containing an oxidation agent.
Claim 10
Dependent Claim
75 words
The method according to claim 1, comprising the additional step of: etching a depression into said second surface before said electrochemical etching to reduce thermal conduction between said structured region and the remaining part of said substrate, said depression being oriented under said structured region and having an expanse parallel to said first surface and said expanse being at least as large as that of said structured region in the same direction as the expanse.
Claim 11
Dependent Claim
35 words
The method according to claim 9, said method being further defined by producing said depression in such a depth that said structured region comprises a depth of 10-100 μm perpendicularly relative to said first surface.
Claim 12
Dependent Claim
51 words
The method according to claim 7, comprising the additional step of: modifying process parameters in said electrochemical etching when said hole structures attain a first depth so that the cross section of said hole structures grows, so that a network of cavities occurs in the lower region of said hole structures.
Claim 13
Dependent Claim
21 words
The method according to claim 11, wherein said modifying step is further defined by increasing said current density in said electrolyte.
Claim 14
Dependent Claim
39 words
The method according to claim 11, wherein said etching is further defined by performing said electrochemical etching in a fluoride containing acidic electrolyte, and said modifying step is further defined by reducing said concentration of fluoride in said electrolyte.
Claim 15
Dependent Claim
17 words
The method according to claim 11, comprising the additional step of: oxidizing said surface of said cavities.
Claim 16
Dependent Claim
51 words
The method according to claim 11, said method being further defined by generating said hole structures having a center-to-center spacing of 1-2 μm, a depth of 1-30 μm, and a diameter of 0.2-1 μm in the region of said first surface; and producing said cavities having a diameter of 0.5-1.8 μm.
Claim 17
Dependent Claim
92 words
The method according to claim 1, comprising the additional steps of: producing said hole structures in said structured region with a non-uniform distribution in said first surface; and modifying process parameters in said electrochemical etching when said hole structures attain a first depth such that a cross section of said hole structures increases so that neighboring hole structures in regions of higher density of said hole structures grow together upon formation of a cavity and supports of silicon remain between neighboring hole structures in regions of lower density of said hole structures.
Claim 18
Dependent Claim
20 words
The method according to claim 16, said modifying step being further defined by increasing said current density in said electrolyte.
Claim 19
Dependent Claim
38 words
The method according to claim 16, said etching is further defined by performing said electrochemical etching in a fluoride containing acidic electrolyte, and said modifying step being further defined by reducing said concentration of fluoride in said electrolyte.
Claim 20
Dependent Claim
20 words
The method according to claim 16, comprising the additional step of: laterally applying said pyrodetector elements relative to said supports.
Claim 21
Dependent Claim
42 words
The method according to claim 1, comprising the additional steps of: providing said first surface of said structured region with a planar layer; and applying a lower electrode, a pyro-active layer and an upper electrode for said pyrodetector element on said surface.
Claim 22
Dependent Claim
60 words
The method according to claim 20, wherein said step of providing said surface of said structured region with a planar layer is further defined by providing said surface of said structured region with a planar layer formed of SiO 2 , and said step of applying a lower electrode is further defined by providing a lower electrode formed of platinum.
Claim 23
Dependent Claim
26 words
The method according to claim 21, wherein said step of applying a pyro-active layer is further defined by providing a pyro-active layer formed of lead titanate.
Claim 24
Dependent Claim
27 words
The method according to claim 21, wherein said step of applying a pyro-active layer is further defined by providing a pyro-active layer formed of modified lead titanate.
Claim 25
Dependent Claim
25 words
The method according to claim 21, wherein said step of applying an upper electrode is further defined by providing a upper electrode formed of nickel.
Claim 26
Dependent Claim
26 words
The method according to claim 21, wherein said step of applying an upper electrode is further defined by providing a upper electrode formed of chromium nickel.
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