Patent US5403673A successfully refreshed from Google Patents.
US5403673A
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Functional thin film member
Assignee: Ricoh Research Institute of General Electronics Co Ltd
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Filing: 1992-03-09
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Granted: 1995-04-04
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Expires: 2012-03-09
Abstract
Abstract A functional thin film member is composed of an insulating substrate; a first single crystal thin film layer which contains at least one atom component of Si or Ge, formed on the insulating substrate; an intermediate layer with a cubic crystal system and a lattice constant difference of 15% or less with respect to the lattice constant of the single crystal thin film layer, formed on said single crystal thin film layer; and a second single crystal thin film layer of an oxide formed on the intermediate layer. The first single crystal thin film layer may include crystal orientations suitable for the properties of functional members to be provided above the single crystal thin film layer on an identical plane of the surface of the single crystal thin film layer, and the intermediate layer may be formed in at least one portion of the single crystal thin film layer, corresponding to any of the crystal orientations. In this case, a functional element utilizing the second single crystal thin film layer; and a passive or active device which is formed on the first single crystal thin film layer is electrically or optically connected to the functional element or the insulating substrate.
Inventors
- 👤 Koichi Haga
- 👤 Akihiro Itoh
- 👤 Hiroshi Miura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:44
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/22; H10; H10F; H10F30/00
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
101 words
A functional thin film member comprising: an insulating substrate; a first single crystal thin film layer comprising a single crystal of Si x Ge l-x , wherein 0≦×≦1 , formed on said insulating substrate; an intermediate layer with a cubic crystal system and a lattice constant difference of 15% or less with respect to the lattice constant of said first single crystal thin film layer, formed on said first single crystal thin film layer, said intermediate layer being free from oxygen and resistant to oxidation; and a second single crystal thin film layer of an oxide formed on said intermediate layer.
Claim 2
Dependent Claim
101 words
A functional thin film member comprising: an insulating substrate; a first single crystal thin film layer comprising a single crystal of Si x Ge l-x , wherein 0≦×≦1 , formed on said insulating substrate; an intermediate layer with a cubic crystal system and a lattice constant difference of 15% or less with respect to the lattice constant of said first single crystal thin film layer, formed on said first single crystal thin film layer, said intermediate layer being free from oxygen and resistant to oxidation; and a second single crystal thin film layer of an oxide formed on said intermediate layer.
Claim 3
Dependent Claim
43 words
The functional thin film member as claimed in Clain 1, wherein said insulating substrate comprises a single crystalline material selected from the group consisting of α-Al 2 O 3 , CaF 2 , SrTiO 3 , BaTiO 3 , and LiNbO 3 .
Claim 4
Dependent Claim
59 words
The functional thin film member as claimed in Claim 1, wherein said insulating substrate comprises a polycrystalline material selected from the group consisting of ceramics made from α-Al 2 O 3 , CaF 2 , SrTiO 3 , BaTiO 3 , or LiNbO 3 , and polycrystals of AlN, Y 2 O 3 , TiO 2 , and MgO.
Claim 5
Dependent Claim
34 words
The functional thin film member as claimed in claim 1, wherein said insulating substrate comprises an amorphous material selected from the group consisting of SiO 2 , Si 3 N 4 , and SiC.
Claim 6
Dependent Claim
30 words
The functional thin film member as claimed in claim 1, wherein said insulating substrate comprises an electroconductive material and an electrically insulating material which is coated on said electroconductive material.
Claim 7
Dependent Claim
50 words
The functional thin film member as claimed in claim 5, wherein said electroconductive material is selected from the group consisting of Al, Ti, W, Cr, Ni, NiCr, and Mo, and said electrically insulating material is selected from the group consisting of SiO 2 , and Si 3 N 4 .
Claim 8
Dependent Claim
29 words
The functional thin film member as claimed in claim 1, wherein said intermediate layer comprises a material selected from the group consisting of ZnS, ZnSe, Zn(S, Se), and ZnMnSe.
Claim 9
Dependent Claim
27 words
The functional thin film member as claimed in claim 1, wherein said intermediate layer comprises a material selected from the group consisting of GaP, AlGaAs, and GaN.
Claim 10
Dependent Claim
27 words
The functional thin film member as claimed in claim 1, wherein said intermediate layer comprises a material selected from the group consisting of InP, AlAs, and AlP.
Claim 11
Dependent Claim
45 words
The functional thin film member as claimed in claim 1, wherein said intermediate layer comprises a material selected from the group consisting of CaF 2 , SrF 2 , BaF 2 , (Ca, Sr)F 2 , (Ca, Ba)F 2 , and (Sr, Ba)F 2 .
Claim 12
Dependent Claim
22 words
The functional thin film member as claimed in claim 1, wherein said second single crystal thin film layer is a ferroelectric layer.
Claim 13
Dependent Claim
41 words
The functional thin film member as claimed in claim 11, wherein said ferroelectric layer comprises a material selected from the group consisting of PbTiO 3 , (Pb, La)TiO 3 , Pb(Zr, Ti)O 3 , and (Pb, La) (Zn, Ti)O 3 .
Claim 14
Dependent Claim
32 words
The functional thin film member as claimed in claim 1, wherein said second single crystal thin film layer is a superconductive thin film layer comprising YBa 2 Cu 3 O 7 .
Claim 15
Dependent Claim
30 words
The functional thin film member as claimed in claim 1, further comprising a buffer layer comprising an oxide between said intermediate layer and said second single crystal thin film layer.
Claim 16
Dependent Claim
61 words
The functional thin film member as claimed in claim 14, wherein said oxide for said buffer layer is a single crystal selected from the group consisting of SiO, SiN, Y 2 O 3 , γ-Al 2 O 3 , TiO 2 , MgO, SrTio 3 , BaTiO 3 , LiNbO 3 , LiTaO 3 , and MgAl 2 O 4 .
Claim 17
Dependent Claim
194 words
A functional thin film member comprising: an insulating substrate; a first single crystal thin film layer comprising a single crystal of Si x Ge 1-x , wherein 0≦×≦1, formed on said insulating substrate, said first single crystal thin film layer having crystal orientations suitable for the properties of functional members to be provided above said first single crystal thin film layer on an identical plane of the surface of said first single crystal thin film layer, an intermediate layer with a cubic crystal system and a lattice constant difference of 15% or less with respect to the lattice constant of said first single crystal thin film layer, formed in at least one portion of said first single crystal thin film layer, corresponding to any of said crystal orientations, said intermediate layer being free oxygen and resistant to oxidation; a second single crystal thin film layer of an oxide formed on said intermediate layer; a functional element utilizing said second single crystal thin film layer; and a passive or active device which is formed on said first single crystal thin film layer and electrically or optically connected to said functional element or said insulating substrate.
Claim 18
Dependent Claim
194 words
A functional thin film member comprising: an insulating substrate; a first single crystal thin film layer comprising a single crystal of Si x Ge 1-x , wherein 0≦×≦1, formed on said insulating substrate, said first single crystal thin film layer having crystal orientations suitable for the properties of functional members to be provided above said first single crystal thin film layer on an identical plane of the surface of said first single crystal thin film layer, an intermediate layer with a cubic crystal system and a lattice constant difference of 15% or less with respect to the lattice constant of said first single crystal thin film layer, formed in at least one portion of said first single crystal thin film layer, corresponding to any of said crystal orientations, said intermediate layer being free oxygen and resistant to oxidation; a second single crystal thin film layer of an oxide formed on said intermediate layer; a functional element utilizing said second single crystal thin film layer; and a passive or active device which is formed on said first single crystal thin film layer and electrically or optically connected to said functional element or said insulating substrate.
Claim 19
Dependent Claim
42 words
The functional thin film member as claimed in claim 16, wherein said insulating substrate comprises a single crystalline material selected from the group consisting of α-Al 2 O 3 , CaF 2 , SrTiO 3 ,BaTiO 3 , and LiNbO 3 .
Claim 20
Dependent Claim
56 words
The functional thin film member as claimed in claim 16, wherein said insulating substrate comprises a polycrystalline material selected from the group consisting of ceramics made from α-Al 2 O 3 , CaF 2 , SrTiO 3 , BaTiO 3 , or LiNBO 3 , and polycrystals of AlN, Y 2 O 3 , and MgO.
Claim 21
Dependent Claim
34 words
The functional thin film member as claimed in claim 16, wherein said insulating substrate comprises an amorphous material selected from the group consisting of SiO 2 , Si 3 N 4 , and SiC.
Claim 22
Dependent Claim
30 words
The functional thin film member as claimed in claim 16, wherein said insulating substrate comprises an electroconductive material and an electrically insulating material which is coated on said electroconductive material.
Claim 23
Dependent Claim
50 words
The functional thin film member as claimed in claim 20, wherein said electroconductive material is selected from the group consisting of Al, Ti, W, Cr, Ni, NiCr, and Mo, and said electricallly insulating material is selected from the group consisting of SiO 2 , and Si 3 N 4 .
Claim 24
Dependent Claim
29 words
The functional thin film member as claimed in claim 16, wherein said intermediate layer comprises a material selected from the group consisting of ZnS, ZnSe, Zn(S, Se), and ZnMnSe.
Claim 25
Dependent Claim
27 words
The functional thin film member as claimed in claim 16, wherein said intermediate layer comprises a material selected from the group consisting of GaP, AlGaAs, and GaN.
Claim 26
Dependent Claim
27 words
The functional thin film member as claimed in claim 16, wherein said intermediate layer comprises a material selected from the group consisting of InP, AlAs, and AlP.
Claim 27
Dependent Claim
45 words
The functional thin film member as claimed in claim 16, wherein said intermediate layer comprises a material selected from the group consisting of CaF 2 , SrF 2 , BaF 2 , (Ca, Sr)F 2 , (Ca, Ba)F 2 , and (Sr, Ba)F 2 .
Claim 28
Dependent Claim
22 words
The functional thin film member as claimed in claim 16, wherein said second single crystal thin film layer is a ferroelectric layer.
Claim 29
Dependent Claim
41 words
The functional thin film member as claimed in claim 26, wherein said ferroelectric layer comprises a material selected from the group consisting of PbTiO 3 , (Pb, La)TiO 3 , Pb(Zn, Ti)O 3 , and (Pb, La) (Zr, Ti)O 3 .
Claim 30
Dependent Claim
32 words
The functional thin film member as claimed in claim 16, wherein said second single crystal thin film layer is a superconductive thin film layer comprising YBa 2 Cu 3 O 7 .
Claim 31
Dependent Claim
30 words
The functional thin film member as claimed in claim 16, further comprising a buffer layer comprising an oxide between said intermediate layer and said second single crystal thin film layer.
Claim 32
Dependent Claim
61 words
The functional thin film member as claimed in claim 29, wherein said oxide for said buffer layer is a single crystal selected from the group consisting of SiO, SiN, Y 2 O 3 , γ-Al 2 O 3 , TiO 2 , MgO, SrTiO 3 , BaTiO 3 , LiMbO 3 , LiTaO 3 , and MgAl 2 O 4 .
Claim 33
Dependent Claim
18 words
The functional thin film member as claimed in claim 16, wherein said functional element is a light switch.
Claim 34
Dependent Claim
18 words
The functional thin film member as claimed in claim 16, wherein said active device is a bi-polar transistor.
References Cited (Backward Citations)
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US4560576A
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| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
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