US5403630A
Expired / Lapsed
US
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Vapor-phase growth method for forming S2 O2 films
Assignee: Toshiba Corp
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Filing: 1993-10-27
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Granted: 1995-04-04
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Expires: 2013-10-27
Abstract
Abstract A vapor-phase growth method comprising the steps of introducing a silicon-containing gas and ozone into a reaction vessel containing a sample, and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas, into the reaction vessel at the same the as, before, or after the silicon-containing gas and the ozone are introduced into the reaction vessel. The silicon-containing gas and the ozone react, forming an intermediate product which can readily condense. The intermediate product reacts with the excited oxygen, thereby forming a thin insulating film which excels in step coverage and has good insulating property.
Inventors
- 👤 Isao Matsui
- 👤 Akio Ui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:53
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/44; C23C16/448; C23C16/452
Claims Analysis
Total Claims: 51
Claim 1
Independent Claim
86 words
A vapor-phase growth method for forming a silicon oxide film comprising the steps of: introducing a silicon-containing gas and ozone into a reaction vessel containing a sample and not containing plasma; and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas excluding silicon-containing gas and ozone, into the reaction vessel not containing plasma at the same time as, before, or after the silicon-containing gas and the ozone are introduced into the reaction vessel to deposit said silicon oxide film on the sample.
Claim 2
Dependent Claim
86 words
A vapor-phase growth method for forming a silicon oxide film comprising the steps of: introducing a silicon-containing gas and ozone into a reaction vessel containing a sample and not containing plasma; and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas excluding silicon-containing gas and ozone, into the reaction vessel not containing plasma at the same time as, before, or after the silicon-containing gas and the ozone are introduced into the reaction vessel to deposit said silicon oxide film on the sample.
Claim 3
Dependent Claim
15 words
The method according to claim 1, wherein said silicon-containing gas is an organic oxysilane compound.
Claim 4
Dependent Claim
31 words
The method according to claim 2, wherein said organic oxysilane compound is at least one selected from the group consisting of tetraethoxysilane, tetramethoxysilane, tetraethyl silane, tetramethyl silane, triethoxysilane, diethoxysilane and monoethoxysilane.
Claim 5
Dependent Claim
26 words
The method according to claim 1, wherein said oxygen-containing gas is an oxide gas selected from the group consisting of NO 2 and N 2 O.
Claim 6
Dependent Claim
21 words
The method according to claim 1, wherein said oxygen-containing gas is a mixture of an oxygen gas and a non-oxygen gas.
Claim 7
Dependent Claim
30 words
The method according to claim 1, wherein said oxygen or said oxygen-containing gas is excited by applying high-frequency electric power or ultraviolet rays to said oxygen or said oxygen-containing gas.
Claim 8
Dependent Claim
20 words
The method according to claim 1, wherein said ozone and said excited oxygen are alternately introduced into the reaction vessel.
Claim 9
Dependent Claim
30 words
The method according to claim 1, wherein said silicon-containing gas is introduced into the reaction vessel, substantially at the same time as said ozone is introduced into the reaction vessel.
Claim 10
Dependent Claim
25 words
The method according to claim 1, further compressing a step of introducing an excited gas incapable of forming a reaction product, into the reaction vessel.
Claim 11
Dependent Claim
30 words
The method according to claim 9, wherein said gas incapable of forming a reaction product is at least one selected from the group consisting of Ar, He, Xe and Ne.
Claim 12
Dependent Claim
17 words
The method according to claim 9, further comprising a step of applying a bias on said sample.
Claim 13
Dependent Claim
19 words
The method according to claim 11, wherein said bias is a voltage ranging from -100 V to +100 V.
Claim 14
Dependent Claim
24 words
The method according to claim 1, further comprising a step of introducing an excited gas containing a group VII element, into the reaction vessel.
Claim 15
Dependent Claim
48 words
The method according to claim 13, wherein said gas containing a group VII element is at least one selected from the group consisting of NF 3 , CF 4 , C 2 F 6 , C 3 F 8 , CCl 4 and C 4 F 10 .
Claim 16
Dependent Claim
58 words
The method according to claim 1, wherein at least one gas selected from the group consisting of a rare gas, a gas capable of readily changing into cations and a gas capable of readily generating cations is mixed with said oxygen, thereby forming a mixture gas, and the mixture gas is excited and introduced into the reaction vessel.
Claim 17
Dependent Claim
34 words
The method according to claim 15, wherein said gas capable of readily changing into cations is at least one selected from the group consisting of nitrogen monoxide, carbon monoxide, nitrogen, krypton, xenon and argon.
Claim 18
Dependent Claim
24 words
The method according to claim 15, wherein said gas capable of readily changing into cations is vapor of a group I or II element.
Claim 19
Dependent Claim
29 words
The method according claim 15, wherein said gas capable of readily generating cations is at least one selected from the group consisting of helium, neon, krypton, xenon and argon.
Claim 20
Dependent Claim
79 words
A vapor-phase growth method for forming a silicon oxide film comprising the steps of: introducing a silicon-containing gas into a reaction vessel containing a sample and not containing plasma; and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas excluding silicon-containing gas, into the reaction vessel not containing plasma at the same time as, before, or after the silicon-containing gas is introduced into the reaction vessel to deposit said silicon oxide film on the sample.
Claim 21
Dependent Claim
79 words
A vapor-phase growth method for forming a silicon oxide film comprising the steps of: introducing a silicon-containing gas into a reaction vessel containing a sample and not containing plasma; and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas excluding silicon-containing gas, into the reaction vessel not containing plasma at the same time as, before, or after the silicon-containing gas is introduced into the reaction vessel to deposit said silicon oxide film on the sample.
Claim 22
Dependent Claim
33 words
The method according to claim 19, wherein said oxygen or said oxygen-containing gas generates ozone when excited in a first excitation region and generates excited oxygen when excited in a second excitation region.
Claim 23
Dependent Claim
44 words
The method according to claim 20, wherein said step of introducing said ozone and said excited oxygen into the reaction vessel comprises a step of introducing excited oxygen from said first excitation region and a step of introducing ozone from said second excitation region.
Claim 24
Dependent Claim
20 words
The method according to claim 20, wherein said ozone and said excited oxygen are alternately introduced into the reaction vessel.
Claim 25
Dependent Claim
30 words
The method according to claim 20, wherein said silicon-containing gas is introduced into the reaction vessel, substantially at the same time as said ozone is introduced into the reaction vessel.
Claim 26
Dependent Claim
30 words
The method according to claim 20, wherein said ozone and said excited oxygen are introduced into the reaction vessel through a passage connected to said first and second excitation regions.
Claim 27
Dependent Claim
20 words
The method according to claim 19, wherein said oxygen or said oxygen-containing gas is excited in the same excitation region.
Claim 28
Dependent Claim
15 words
The method according to claim 19, wherein said silicon-containing gas is an organic oxysilane compound.
Claim 29
Dependent Claim
31 words
The method according to claim 26, wherein said organic oxysilane compound is at least one selected from the group consisting of tetraethoxysilane, tetramethoxysilane, tetraethyl silane, tetramethyl silane, triethoxysilane, diethoxysilane and monoethoxysilane.
Claim 30
Dependent Claim
26 words
The method according to claim 19, wherein said oxygen-containing gas is an oxide gas selected from the group consisting of NO 2 and N 2 O.
Claim 31
Dependent Claim
21 words
The method according to claim 19, wherein said oxygen-containing gas is a mixture of an oxygen gas and a non-oxygen gas.
Claim 32
Dependent Claim
30 words
The method according to claim 19, wherein said oxygen or said oxygen-containing gas is excited by applying high-frequency electric: power or ultraviolet rays to said oxygen or said oxygen-containing gas.
Claim 33
Dependent Claim
25 words
The method according to claim 19, further compressing a step of introducing an excited gas incapable of forming a reaction product, into the reaction vessel.
Claim 34
Dependent Claim
30 words
The method according to claim 19, wherein said gas incapable of forming a reaction product is at least one selected from the group consisting of Ar, He, Xe and Ne.
Claim 35
Dependent Claim
17 words
The method according to claim 31, further comprising a step of applying a bias on said sample.
Claim 36
Dependent Claim
19 words
The method according to claim 33, wherein said bias is a voltage ranging from -100 V to +100 V.
Claim 37
Dependent Claim
24 words
The method according to claim 19, further comprising a step of introducing an excited gas containing a group VII element, into the reaction vessel.
Claim 38
Dependent Claim
48 words
The method according to claim 35, wherein said gas containing a group VII element is at least one selected from the group consisting of NF 3 , CF 4 , C 2 F 6 , C 3 F 8 , CCl 4 and C 4 F 10 .
Claim 39
Dependent Claim
58 words
The method according to claim 19, wherein at least one gas selected from the group consisting of a rare gas, a gas capable of readily changing into cations and a gas capable of readily generating cations is mixed with said oxygen, thereby forming a mixture gas, and the mixture gas is excited and introduced into the reaction vessel.
Claim 40
Dependent Claim
34 words
The method according to claim 32, wherein said gas capable of readily changing into cations is at least one selected from the group consisting of nitrogen monoxide, carbon monoxide, nitrogen, krypton, xenon and argon.
Claim 41
Dependent Claim
24 words
The method according to claim 37, wherein said gas capable of readily changing into cations is vapor of a group I or II element.
Claim 42
Dependent Claim
29 words
The method according claim 37, wherein said gas capable of readily generating cations is at least one selected from the group consisting of helium, neon, krypton, xenon and argon.
Claim 43
Dependent Claim
77 words
A vapor-phase growth method for forming a silicon oxide film comprising the steps of: introducing a silicon-containing gas and ozone into a reaction vessel containing a sample and not containing plasma; and introducing an excited gas incapable of forming a reaction product, into the reaction vessel not containing plasma at the time as, before, or after the silicon-containing gas ad the ozone are introduced into the reaction vessel to deposit said silicon oxide film on the sample.
Claim 44
Dependent Claim
77 words
A vapor-phase growth method for forming a silicon oxide film comprising the steps of: introducing a silicon-containing gas and ozone into a reaction vessel containing a sample and not containing plasma; and introducing an excited gas incapable of forming a reaction product, into the reaction vessel not containing plasma at the time as, before, or after the silicon-containing gas ad the ozone are introduced into the reaction vessel to deposit said silicon oxide film on the sample.
Claim 45
Dependent Claim
15 words
The method according to claim 41, wherein said silicon-containing gas is an organic oxysilane compound.
Claim 46
Dependent Claim
31 words
The method according to claim 42, wherein said organic oxysilane compound is at least one selected from the group consisting of tetraethoxysilane, tetramethoxysilane, tetraethyl silane, tetramethyl silane, triethoxysilane, diethoxysilane and monoethoxysilane.
Claim 47
Dependent Claim
30 words
The method according to claim 41, wherein said gas incapable of forming a reaction product is at least one selected from the group consisting of Ar, He, Xe, and Ne.
Claim 48
Dependent Claim
17 words
The method according to claim 41, further comprising a step of applying a bias on said sample.
Claim 49
Dependent Claim
19 words
The method according to claim 45, wherein said bias is a voltage ranging from -100 V to +100 V.
Claim 50
Dependent Claim
24 words
The method according to claim 41, further comprising a step of introducing an excited gas containing a group VII element, into the reaction vessel.
Claim 51
Dependent Claim
48 words
The method according to claim 47, wherein said gas containing a group VII element is at least one selected from the group consisting of NF 3 , CF 4 , C 2 F 6 , C 3 F 8 , CCl 4 and C 4 F 10 .
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