Formation of silicon oxide film

Abstract

Abstract PURPOSE:To decrease the OH component in a silicon oxide film and to decrease the amount of film contraction by depositing the silicon oxide film by a CVD method using tetraethoxysilane and ozone, and thereafter performing annealing treatment in an ozone atmosphere or in oxygen plasma continuously. CONSTITUTION:After the deposition of a silicon oxide film, O3 is made to flow by about 3,000 SCCM or more for about 5-10 minutes in the same chamber, or the film is left alone in O2 plasma discharge. Temperature is set at 430 deg.C (the higher the temperature, the better the quality). For example, the OH component which remains in the silicon oxide film becomes smaller than he component of the film which does not undergo O3 annealing by about 10% at the ratio of O-H/Si-O (spectrum intensity ratio in FT-IR analysis) by the O3 annealing. The film contracting rate before and after the annealing in the N2 atmosphere at 900 deg.C is improved by about 9% in comparison with the values of (film thickness before annealing-film thickness after annealing)/(film thickness before annealing)X100.

Inventors

• 👤 Hiroichi Ueda
• 👤 博一 上田

Bibliographic Details