Self-cascoding CMOS device

Claim 2

A cascode transconductance circuit comprising: a first n-mos FET having a first gate, a first drain, a first source, and a first threshold voltage, said first source connected to a first voltage; and a second n-mos FET having a second gate, a second drain, a second source, and a second threshold voltage, said second gate connected to said first gate of said first n-mos FET, said second drain connected to a second voltage greater than said first voltage, said second source connected to said first drain of said first n-mos FET, and said first threshold voltage being at least 0.1 volts greater than said second threshold voltage to ensure that said first n-mos FET operates in its saturated region; wherein an input voltage applied to said connected together first and second gates of said first and second n-mos FETs, respectively, causes a proportional output current in response thereof at said second drain of said second n-mos FET.

Claim 3

The cascode transconductance circuit as recited in claim 1, wherein said first threshold voltage of said first n-mos FET is in a range of 0.6 to 1.1 volts.

Claim 4

The cascode transconductance circuit as recited in claim 1, wherein said second threshold voltage of said second n-mos FET is in a range of -0.2 to 0.2 volts.

Claim 5

The cascode transconductance circuit as recited in claim 1, further comprising: a third n-mos FET having a third gate, a third drain, a third source, and a third threshold voltage, said third gate connected to said connected together first and second gates of said first and second n-mos FETs, respectively, and said third source connected to said first voltage; and a fourth n-mos FET having a fourth gate, a fourth drain, a fourth source, and a fourth threshold voltage, said fourth gate connected to said connected together first, second and third gates of said first, second and third n-mos FETs, respectively, said fourth drain connected to said second voltage, said fourth source connected to said third drain of said third n-mos FET, and said third threshold voltage being at least 0.1 volts greater than said fourth threshold voltage to ensure that said third n-mos FET operates in its saturated region; wherein an input voltage applied to said connected together gates of said first, second, third, and fourth n-mos FETs causes a proportional output current in response thereof at said connected together second and fourth drains of said second and fourth n-mos FETs, respectively.

Claim 6

The cascode transconductance circuit as recited in claim 4, wherein said first and third threshold voltages of said first and third n-mos FETs, respectively, are in a range of 0.6 to 1.1 volts.

Claim 7

The cascode transconductance circuit as recited in claim 4, wherein said second and fourth threshold voltages of said second and fourth n-mos FETs, respectively, are in a range of -0.2 to 0.2 volts.

Claim 8

A cascode transconductance circuit comprising: a first p-mos FET having a first gate, a first source, a first drain, and a first threshold voltage, said first drain connected to a first voltage; and a second p-mos FET having a second gate, a second drain, a second source, and a second threshold voltage, said second gate connected to said first gate of said first p-mos FET, said second source connected to a second voltage greater than said first voltage, said second drain connected to said first source of said first p-mos FET, and said second threshold voltage being at least 0.1 volts greater than said first threshold voltage to ensure that said second p-mos FET operates in its saturated region; wherein an input voltage applied to said connected together first and second gates of said first and second p-mos FETs, respectively, causes a proportional output current in response thereof at said second source of said second p-mos FET.

Claim 9

A cascode transconductance circuit comprising: a first p-mos FET having a first gate, a first source, a first drain, and a first threshold voltage, said first drain connected to a first voltage; and a second p-mos FET having a second gate, a second drain, a second source, and a second threshold voltage, said second gate connected to said first gate of said first p-mos FET, said second source connected to a second voltage greater than said first voltage, said second drain connected to said first source of said first p-mos FET, and said second threshold voltage being at least 0.1 volts greater than said first threshold voltage to ensure that said second p-mos FET operates in its saturated region; wherein an input voltage applied to said connected together first and second gates of said first and second p-mos FETs, respectively, causes a proportional output current in response thereof at said second source of said second p-mos FET.

Claim 10

The cascode transconductance circuit as recited in claim 7, wherein said first threshold voltage of said first p-mos FET is in a range of -0.2 to 0.2 volts.

Claim 11

The cascode transconductance circuit as recited in claim 7, wherein said second threshold voltage of said second p-mos FET is in a range of -0.6 to -1.1 volts.

Claim 12

The cascode transconductance circuit as recited in claim 7, further comprising: a third p-mos FET having a third gate, a third source, a third drain, and a third threshold voltage, said third gate connected to said connected together first and second gates of said first and second p-mos FETs, respectively, said third drain connected to said first voltage; and a fourth p-mos FET having a fourth gate, a fourth source, a fourth drain, and a fourth threshold voltage, said fourth gate connected to said connected together first, second and third gates of said first, second and third p-mos FETs, respectively, said fourth source connected to said second voltage, said fourth drain connected to said third source of said third p-mos FET, and said fourth threshold voltage being at least 0.1 volts greater than said third threshold voltage to ensure that said fourth p-mos FET operates in its saturated region; wherein an input voltage applied to said connected together first, second, third, and fourth gates of said first, second, third, and fourth p-mos FETs, respectively, causes a proportional output current in response thereof at said connected together second and fourth sources of said second and fourth p-mos FETs, respectively.

Claim 13

The cascode transconductance circuit as recited in claim 10, wherein said first and third threshold voltages of said first and third p-mos FETs, respectively, are in a range of -0.2 to 0.2 volts.

Claim 14

The cascode transconductance circuit as recited in claim 10, wherein said second and fourth threshold voltages of said second and fourth p-mos FETs, respectively, are in a range of -0.6 to -1.1 volts.

Claim 15

A cascode transconductance circuit constructed in a p- type substrate or well, comprising: a first gate electrode formed on a gate oxide layer over a surface of said p- type substrate or well; an n+ type drain region formed beneath said surface of said p- type substrate or well, and laterally extending towards a second edge from a first edge of said first gate electrode such that said n+ type drain region lies partially beneath said first gate electrode; a first n+ type source region formed beneath said surface of said p- type substrate or well, and laterally extending towards said first edge from said second edge of said first gate electrode such that said first n+ type source region lies partially beneath said first gate electrode; a first p type threshold adjust region formed adjacent to said first n+ type source region, and laterally extending from said first n+ type source region to a first point lying beneath said first gate electrode, said first point being at a first distance greater than zero from said first edge of said first gate electrode and a second distance greater than zero from said second edge of said first gate electrode; and a first region laterally extending from said n+ type drain region to said first p type threshold adjust region, wherein a first threshold voltage associated with said first gate electrode and said first p type threshold adjust region is at least 0.1 volts greater than a second threshold voltage associated with said first gate electrode and said first region.

Claim 16

A cascode transconductance circuit constructed in a p- type substrate or well, comprising: a first gate electrode formed on a gate oxide layer over a surface of said p- type substrate or well; an n+ type drain region formed beneath said surface of said p- type substrate or well, and laterally extending towards a second edge from a first edge of said first gate electrode such that said n+ type drain region lies partially beneath said first gate electrode; a first n+ type source region formed beneath said surface of said p- type substrate or well, and laterally extending towards said first edge from said second edge of said first gate electrode such that said first n+ type source region lies partially beneath said first gate electrode; a first p type threshold adjust region formed adjacent to said first n+ type source region, and laterally extending from said first n+ type source region to a first point lying beneath said first gate electrode, said first point being at a first distance greater than zero from said first edge of said first gate electrode and a second distance greater than zero from said second edge of said first gate electrode; and a first region laterally extending from said n+ type drain region to said first p type threshold adjust region, wherein a first threshold voltage associated with said first gate electrode and said first p type threshold adjust region is at least 0.1 volts greater than a second threshold voltage associated with said first gate electrode and said first region.

Claim 17

The cascode transconductance circuit as recited in claim 13, wherein said first and second distances are substantially equal.

Claim 18

The cascode transconductance circuit as recited in claim 13, wherein said first p type threshold adjust region has a concentration of p type dopants sufficient to cause said first threshold voltage associated with said first gate electrode and said first p type threshold adjust region to be in a range of 0.6 to 1.1 volts.

Claim 19

The cascode transconductance circuit as recited in claim 13, wherein said first region is formed of a first portion of said p- type substrate or well, lying beneath said first gate electrode and extending laterally between said n+ type drain region and said first p type threshold adjust region, and has a concentration of p type dopants sufficient to cause a threshold voltage associated with said first gate electrode and said first portion of said p- type substrate or well, to be in a range of -0.2 to 0.2 volts.

Claim 20

The cascode transconductance circuit as recited in claim 13, wherein said first region is formed of a second p type threshold adjust region formed beneath said first gate electrode and extending laterally between said n+ type drain region and said first p type threshold adjust region, wherein said first and second p type threshold adjust regions have a first and second concentration of p type dopants, respectively, such that said first threshold voltage associated with said first gate electrode and said first p type threshold adjust region, is at least 0.1 volts greater than said second threshold voltage associated with said first gate electrode and said second p-type threshold adjust region.

Claim 21

The cascode transconductance circuit as recited in claim-13, wherein said first region is formed of a first n type threshold adjust region formed beneath said first gate electrode and extending laterally between said n+ type drain region and said first p type threshold adjust region, wherein said first p type threshold adjust region has a first concentration of p type dopants and said first n type threshold adjust region has a first concentration of n type dopants, and said first threshold voltage associated with said first gate electrode and said first p type threshold adjust region, is at least 0.1 volts greater than said second threshold voltage associated with said first gate electrode and said first n type threshold adjust region.

Claim 22

The cascode transconductance circuit as recited in claim 13, further comprising: a second gate electrode formed on a gate oxide layer over said surface of said p- type substrate, wherein said n+ type drain region laterally extends towards a second edge from a first edge of said second gate electrode such that said n+ type drain region lies partially beneath said second gate electrode; a second n+ type source region formed beneath said surface of said p- type substrate or well, and laterally extending towards said first edge front said second edge of said second gate electrode such that said second n+ type source region lies partially beneath said second gate electrode; a second p type threshold adjust region formed adjacent to said second n+ type source region, and laterally extending from said second n+ type source region to a second point lying beneath said second gate electrode, said second point being at a third distance from first edge of said second gate electrode and a fourth distance from said second edge of said second gate electrode; and a second region laterally extending from said n+ type drain region to said second p type threshold adjust region, wherein a third threshold voltage associated with said second gate electrode and said second p type threshold adjust region is at least 0.1 volts greater than a fourth threshold voltage associated with said second gate electrode and said second region.

Claim 23

The cascode transconductance circuit as recited in claim 19, wherein said first, second, third, and fourth distances are substantially equal.

Claim 24

The cascode transconductance circuit as recited in claim 19, wherein said first, second, third, and fourth distances are not substantially equal, but a sum of said first and third distances is substantially equal to a sum of said second and fourth distances.

Claim 25

The cascode transconductance circuit as recited in claim 19, wherein said first and second p type threshold adjust regions each has a concentration of p type dopants sufficient to cause said first threshold voltage associated with said first gate electrode and said first p type threshold adjust region, and said third threshold voltage associated with said second gate electrode and said second p type threshold adjust region to each be in a range of 0.6 to 1.1 volts.

Claim 26

The cascode transconductance circuit as recited in claim 19, wherein said first region is formed of a first portion of said p- type substrate or well, lying beneath said first gate electrode and extending laterally between said n+ type drain region and said first p type threshold adjust region, and said second region is formed of a second portion of said p- type substrate or well, lying beneath said second gate electrode and extending laterally between said n+ type drain region and said second p type threshold adjust region, each of said first and second portions of said p- type substrate or well having a concentration of p type dopants sufficient to cause said second threshold voltage associated with said first gate electrode and said first portion of said p- type substrate or well, and said fourth threshold voltage associated with said second gate electrode and said second portion of said p- type substrate or well to each be in a range of -0.2 to 0.2 volts.

Claim 27

The cascode transconductance circuit as recited in claim 19, wherein said first region is formed of a third p type threshold adjust region lying beneath said first gate electrode and extending laterally between said n+ type drain region and said first p type threshold adjust region, and said second region is formed of a fourth p type threshold adjust region lying beneath said second gate electrode and extending laterally between said n+ type drain region and said second p type threshold adjust region.

Claim 28

The cascode transconductance circuit as recited in claim 19, wherein said first region is formed of a first n type threshold adjust region lying beneath said first gate electrode and extending laterally between said n+ type drain region and said first p type threshold adjust region, and said second region is formed of a second n type threshold adjust region lying beneath said second gate electrode and extending laterally between said n+ type drain region and said second p type threshold adjust region.

Claim 29

A cascode transconductance circuit constructed in an n- type substrate or well, comprising: a first gate electrode formed on a gate oxide layer over a surface of said n- type substrate or well; a first p+ type source region formed beneath said surface of said n- type substrate or well, and laterally extending towards a second edge from a first edge of said first gate electrode such that said first p+ type source region lies partially beneath said first gate electrode; a p+ type drain region formed beneath said surface of said n- type substrate or well, and laterally extending towards said first edge from said second edge of said first gate electrode such that said p+ type drain region lies partially beneath said first gate electrode; a first p type threshold adjust region having a first concentration of p type dopants and formed adjacent to said first p+ type source region, and laterally extending from said p+ type source region to a first point lying beneath said first gate electrode, said first point being at a first distance greater than zero from said second edge of said first gate electrode and a second distance greater than zero from said first edge of said first gate electrode; and a second p type threshold adjust region having a second concentration of p type dopants and formed adjacent to said p+ type drain region, and laterally extending from said p+ type drain region to said first point lying beneath said first gate electrode, wherein said first and second concentrations of p type dopants are such that a second threshold voltage associated with said first gate electrode and said second p type threshold adjust region, is at least 0.1 volts greater than a first threshold voltage associated with said first gate electrode and said first p type threshold adjust region.

Claim 30

A cascode transconductance circuit constructed in an n- type substrate or well, comprising: a first gate electrode formed on a gate oxide layer over a surface of said n- type substrate or well; a first p+ type source region formed beneath said surface of said n- type substrate or well, and laterally extending towards a second edge from a first edge of said first gate electrode such that said first p+ type source region lies partially beneath said first gate electrode; a p+ type drain region formed beneath said surface of said n- type substrate or well, and laterally extending towards said first edge from said second edge of said first gate electrode such that said p+ type drain region lies partially beneath said first gate electrode; a first p type threshold adjust region having a first concentration of p type dopants and formed adjacent to said first p+ type source region, and laterally extending from said p+ type source region to a first point lying beneath said first gate electrode, said first point being at a first distance greater than zero from said second edge of said first gate electrode and a second distance greater than zero from said first edge of said first gate electrode; and a second p type threshold adjust region having a second concentration of p type dopants and formed adjacent to said p+ type drain region, and laterally extending from said p+ type drain region to said first point lying beneath said first gate electrode, wherein said first and second concentrations of p type dopants are such that a second threshold voltage associated with said first gate electrode and said second p type threshold adjust region, is at least 0.1 volts greater than a first threshold voltage associated with said first gate electrode and said first p type threshold adjust region.

Claim 31

The cascode transconductance circuit as recited in claim 26, wherein said first and second distances are substantially equal.

Claim 32

The cascode transconductance circuit as recited in claim 26, wherein said first concentration of p type dopants is sufficient to cause said first threshold voltage associated with said first gate electrode and said first p type threshold adjust region to be in a range of -0.6 to -1.1 volts.

Claim 33

The cascode transconductance circuit as recited in claim 26, wherein said second concentration of p type dopants is sufficient to cause said second threshold voltage associated with said first gate electrode and said second p type threshold adjust region to be in a range of -0.2 to 0.2 volts.

Claim 34

The cascode transconductance circuit as recited in claim 26, further comprising: a second gate electrode formed on a gate oxide layer over said surface of said n- type substrate, wherein said p+ type drain region laterally extends towards a second edge from a first edge of said second gate electrode such that said p+ type drain region lies partially beneath said second gate electrode; a second p+ type source region formed beneath said surface of said p- type substrate or well, and laterally extending towards said first edge from said second edge of said second gate electrode such that said second p+ type source region lies partially beneath said second gate electrode; a third p type threshold adjust region having a third concentration of p type dopants equal to said second concentration of p type dopants and formed adjacent to said p+ type drain region, and laterally extending from said p+ type drain region to a second point lying beneath said second gate electrode, said second point being at a third distance from said first edge of said second gate electrode and a fourth distance from said second edge of said second gate electrode; and a fourth p type threshold adjust region having a fourth concentration of p type dopants equal to said first concentration of p type dopants and formed adjacent to said second p+ type source region, and laterally extending from said second p+ type source region to said second point lying beneath said second gate electrode, wherein said third and fourth concentrations of p type dopants are such that a fourth threshold voltage associated with said second gate electrode and said fourth p type threshold adjust region, is at least 0.1 volts greater than a third threshold voltage associated with said second gate electrode and said third p type threshold adjust region.

Claim 35

The cascode transconductance circuit as recited in claim 30, wherein said first, second, third, and fourth distances are substantially equal.

Claim 36

The cascode transconductance circuit as recited in claim 30, wherein said first, second, third, and fourth distances are not substantially equal, but a sum of said first and third distances is substantially equal to a sum of said second and fourth distances.

Claim 37

The cascode transconductance circuit as recited in claim 30, wherein said first and fourth concentrations of p type dopants are sufficient to cause said first threshold voltage associated with said first gate electrode and said first p type threshold adjust region, and said fourth threshold voltage associated with said second gate electrode and said fourth p type threshold adjust region to each be in a range of -0.6 to -1.1 volts.

Claim 38

The cascode transconductance circuit as recited in claim 30, wherein said second and third concentrations of p type dopants are sufficient to cause said second threshold voltage associated with said first gate electrode and said second p type threshold adjust region, and said third threshold voltage associated with said second gate electrode and said third p type threshold adjust region to each be in a range of -0.2 to 0.2 volts.