Patent US5399530A successfully refreshed from Google Patents.
US5399530A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming interconnection structure to prevent outgassing
Assignee: Sony Corp
•
Filing: 1993-06-18
•
Granted: 1995-03-21
•
Expires: 2013-06-18
Abstract
Abstract The disclosure relates to a method of forming an interconnection structure. In the method, firstly, a SOG layer is deposited on a first aluminum conductive layer which is formed on a substrate. Then, a through-hole is formed by opening the SOG layer so as to expose two opposed surfaces of the SOG layer and an upper surface of the first conductive layer. Then, the substrate, the first conductive layer and the SOG layer are heated at a first temperature ranging from 450 DEG to 550 DEG C. Then, a titanium layer is formed on the through-hole so as to mask the two opposed surfaces of the SOG layer. Then, a second aluminum conductive layer is deposited on the SOG layer by sputtering so as to fill the through-hole with the second conductive layer. During the sputtering of the second conductive layer, the release of water vapor from the SOG layer is suppressed, thereby obtaining an interconnection structure having a good contact.
Inventors
- 👤 Hidenori Kenmotsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:04
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/034; H10W20/056; H10W20/071; H10W20/081; H10W20/083
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
130 words
A method of manufacturing a semiconductor device with multi-layer interconnections, comprising the steps in the sequence: forming a first conductive interconnection layer on a substrate; depositing an interlayer insulating layer containing a moisture absorbing material layer on the first conductive interconnection layer; forming a through-hole in the interlayer insulating layer so as to expose a surface of the first conductive interconnection layer; heating the substrate at a first temperature depositing a metal layer in the through-hole on the exposed first conductive interconnection layer and on the interlayer insulating layer while heating the substrate at a second temperature which is lower than the first temperature; and forming a second conductive interconnection layer on the metal layer by sputtering to connect the first conductive interconnection layer and the second conductive interconnection layer.
Claim 2
Independent Claim
130 words
A method of manufacturing a semiconductor device with multi-layer interconnections, comprising the steps in the sequence: forming a first conductive interconnection layer on a substrate; depositing an interlayer insulating layer containing a moisture absorbing material layer on the first conductive interconnection layer; forming a through-hole in the interlayer insulating layer so as to expose a surface of the first conductive interconnection layer; heating the substrate at a first temperature depositing a metal layer in the through-hole on the exposed first conductive interconnection layer and on the interlayer insulating layer while heating the substrate at a second temperature which is lower than the first temperature; and forming a second conductive interconnection layer on the metal layer by sputtering to connect the first conductive interconnection layer and the second conductive interconnection layer.
Claim 3
Dependent Claim
16 words
A method according to claim 1, wherein said second conductive interconnection layer comprises an aluminum-based material.
Claim 4
Dependent Claim
12 words
A method according to claim 1, wherein said metal layer comprises titanium.
Claim 5
Dependent Claim
20 words
A method according to claim 1, wherein said first temperature is in the range of 450° C. to 550° C.
Claim 6
Independent Claim
134 words
A method of manufacturing a semiconductor device with multi-layer interconnections, comprising the steps in the sequence: forming a first conductive interconnection layer on a substrate; depositing an interlayer insulating layer containing a moisture absorbing material layer on the first conductive interconnection layer; forming a through-hole in the interlayer insulating layer so as to expose a surface of the first conductive interconnection layer; heating the substrate at a temperature range of 450° C. to 550° C.; forming metal films on the side walls of the through-hole by sputtering the exposed surface of the first conductive interconnection layer while heating the substrate at a second temperature which is lower than the first temperature; and depositing a second conductive interconnection in the through-hole and on the interlayer insulating layer to connect the first and second interconnection, layers.
Claim 7
Independent Claim
134 words
A method of manufacturing a semiconductor device with multi-layer interconnections, comprising the steps in the sequence: forming a first conductive interconnection layer on a substrate; depositing an interlayer insulating layer containing a moisture absorbing material layer on the first conductive interconnection layer; forming a through-hole in the interlayer insulating layer so as to expose a surface of the first conductive interconnection layer; heating the substrate at a temperature range of 450° C. to 550° C.; forming metal films on the side walls of the through-hole by sputtering the exposed surface of the first conductive interconnection layer while heating the substrate at a second temperature which is lower than the first temperature; and depositing a second conductive interconnection in the through-hole and on the interlayer insulating layer to connect the first and second interconnection, layers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-03-20 | 1998-09-19 | 1999-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-20 | 2002-09-19 | 2003-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-20 | 2006-09-19 | 2007-03-21 | $7700.00 | Window Closed / Lapsed |