US5399522A
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Method of growing compound semiconductor
Assignee: Fujitsu Ltd
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Filing: 1993-09-08
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Granted: 1995-03-21
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Expires: 2013-09-08
Abstract
Abstract A first monocrystalline group III-V compound semiconductor layer is formed on an Si substrate. The surface of the first monocrystalline group III-V compound semiconductor layer is polished. A second monocrystalline group III-V compound semiconductor layer is grown on the polished surface by a metal organic chemical vapor deposition, by using as a group III source material at least partially a source material of group III atoms bonded to ethyl radical at the initial stage of growth, and thereafter by using as the group III source material a source material of group III atoms bonded to methyl radical. A grown layer with a flat surface can be obtained. The surface flatness can be improved further by adding In as a group III element.
Inventors
- 👤 Tatsuya Ohori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:12
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/36; H10P14/3602; H10P14/22; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3256; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
128 words
A method of growing compound semiconductor crystal comprising: a first growth step of growing a first monocrystalline group III-V compound semiconductor layer on an Si substrate: a step of polishing said first monocrystalline group III-V compound semiconductor layer to obtain a polished surface; and a second growth step of epitaxially growing a second monocrystalline group III-V compound semiconductor layer on said polished surface by a metal organic chemical vapor deposition method, by using, as a group III source material, at least partially a source material of group III atoms bonded to ethyl radical at least at the initial stage of said second growth step, and thereafter by using, as a group III source material, at least partially a source material of group III atoms bonded to methyl radical.
Claim 2
Independent Claim
128 words
A method of growing compound semiconductor crystal comprising: a first growth step of growing a first monocrystalline group III-V compound semiconductor layer on an Si substrate: a step of polishing said first monocrystalline group III-V compound semiconductor layer to obtain a polished surface; and a second growth step of epitaxially growing a second monocrystalline group III-V compound semiconductor layer on said polished surface by a metal organic chemical vapor deposition method, by using, as a group III source material, at least partially a source material of group III atoms bonded to ethyl radical at least at the initial stage of said second growth step, and thereafter by using, as a group III source material, at least partially a source material of group III atoms bonded to methyl radical.
Claim 3
Dependent Claim
28 words
A method of growing compound semiconductor crystal according to claim 1, wherein the gas pressure of the metal organic chemical vapor deposition is about 500 Torr or lower.
Claim 4
Dependent Claim
33 words
A method of growing compound semiconductor crystal according to claim 2, wherein the gas pressure of the metal organic chemical vapor deposition is selected from within the range from 50 to 100 Torr.
Claim 5
Dependent Claim
39 words
A method of growing compound semiconductor crystal according to claim 1, wherein said source material of group III atoms bonded to ethyl radical is triethylgallium, and said source material of group III atoms bonded to methyl radical is trimethylgallium.
Claim 6
Dependent Claim
34 words
A method of growing compound semiconductor crystal according to claim 4, wherein the thickness of said second monocrystalline group III-V compound semiconductor layer grown by using said triethylgallium is about 10 to 100 nm.
Claim 7
Dependent Claim
46 words
A method of growing compound semiconductor crystal according to claim 1, wherein said second growth step uses as the group III source material a mixed gas of said source material of group III atoms bonded to ethyl radical and group III atoms bonded to methyl radical.
Claim 8
Dependent Claim
28 words
A method of growing compound semiconductor crystal according to claim 6, wherein the gas pressure of the metal organic chemical vapor deposition is about 500 Torr or lower.
Claim 9
Dependent Claim
39 words
A method of growing compound semiconductor crystal according to claim 6, wherein said source material of group III atoms bonded to ethyl radical is triethylgallium, and said source material of group III atoms bonded to methyl radical is trimethylgallium.
Claim 10
Dependent Claim
48 words
A method of growing compound semiconductor crystal according to claim 8, wherein the mole flow ratio of said source material of group III atoms bonded to ethyl radical of said mixed gas relative to the whole flow of said group III source material, is about 0.1 or more.
Claim 11
Dependent Claim
40 words
A method of growing compound semiconductor crystal according to claim 1, wherein said source material of group III atoms bonded to ethyl radical is material selected from the group consisting of triethylgallium, triethylaluminum, and a compound of triethylgallium and triethylaluminum.
Claim 12
Dependent Claim
28 words
A method of growing compound semiconductor crystal according to claim 10, wherein the gas pressure of the metal organic chemical vapor deposition is about 500 Torr or lower.
Claim 13
Dependent Claim
40 words
A method of growing compound semiconductor crystal according to claim 1, wherein said source material of group III atoms bonded to methyl radical is material selected from the group consisting of trimethylgallium, trimethylaluminum, and a compound of trimethylgallium and trimethylaluminum.
Claim 14
Dependent Claim
66 words
A method of growing compound semiconductor crystal according to claim 12, wherein said second growth step includes a step of growing a first buffer layer of i-type GaAs by using triethylgallium as the group III source material, and a step of growing a second buffer layer of i-type AlGaAs and an active layer of i-type GaAs layer by using trimethylgallium as the group III source material.
Claim 15
Dependent Claim
28 words
A method of growing compound semiconductor crystal according to claim 13, wherein the gas pressure of the metal organic chemical vapor deposition is about 500 Torr or lower.
Claim 16
Independent Claim
104 words
A method of growing a GaAs monocrystalline layer comprising: a first growth step of growing a first monocrystalline GaAs layer on a Si substrate; a step of polishing said first monocrystalline GaAs layer to obtain a polished surface; a second growth step of epitaxially growing a second monocrystalline GaAs layer on said polished surface by a metal organic chemical vapor deposition method, by using triethylgallium as Ga source; and a third growth step of epitaxially growing a third monocrystalline layer of Al x In y Ga z As (x+y+z=1, 0≦x, y, z≦1) on said second monocrystalline GaAs layer by using trimethylgallium as Ga source.
Claim 17
Independent Claim
104 words
A method of growing a GaAs monocrystalline layer comprising: a first growth step of growing a first monocrystalline GaAs layer on a Si substrate; a step of polishing said first monocrystalline GaAs layer to obtain a polished surface; a second growth step of epitaxially growing a second monocrystalline GaAs layer on said polished surface by a metal organic chemical vapor deposition method, by using triethylgallium as Ga source; and a third growth step of epitaxially growing a third monocrystalline layer of Al x In y Ga z As (x+y+z=1, 0≦x, y, z≦1) on said second monocrystalline GaAs layer by using trimethylgallium as Ga source.
Claim 18
Dependent Claim
36 words
A method of growing compound semiconductor crystal according to claim 15, wherein said first growth step includes growing an amorphous GaAs layer on the Si substrate, raising a substrate temperature, and epitaxially growing another GaAs layer.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-03-20 | 1998-09-19 | 1999-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-20 | 2002-09-19 | 2003-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-20 | 2006-09-19 | 2007-03-21 | $7700.00 | Window Closed / Lapsed |