Semiconductor integrated circuit device with wiring microstructure formed on gates and method of manufacturing the same

Claim 2

A semiconductor device, comprising: a semiconductor substrate; at least two gate electrodes formed over said semiconductor substrate; a gate oxide film formed between said semiconductor substrate and each of said gate electrodes, each of said gate electrodes comprising a first conductive film; a first insulating film formed on each of said gate electrodes; a second conductive film formed on said first insulating film; a second insulating film formed on a part of said gate oxide film in such a way that said second conductive film is exposed, a thickness of said second insulating film being roughly equal to a sum total thickness of said gate electrode, said first insulating film and said second conductive film, wherein a contact hole is formed in said second insulating film between said gate electrodes; and a wire having at least a third conductive film contacting said second conductive film and arranged on said second insulating film and in said contact hole, wherein a sum total thickness of said second conductive film and said third conductive film contacting said second conductive film is large enough to prevent impurities implanted into said wire from being doped into said gate electrodes.

Claim 3

The semiconductor device of claim 1, wherein at least two lamination layer portions each composed of said gate electrode, said first insulating film and said second conductive film are formed, and said contact hole is formed between the two lamination layer portions.

Claim 4

The semiconductor device of claim 1, wherein a lamination layer portion composed of said gate electrode, said first insulating film and said second conductive film is formed with an insulating portion for insulating said lamination layer portion from said wire or vice versa.

Claim 5

The semiconductor device of claim 1, wherein said respective conductive films are formed of poly-crystal silicon or amorphous silicon.

Claim 6

The semiconductor device of claim 1, wherein impurity ions are implanted into said first and second conductive films.

Claim 7

A semiconductor device, comprising: a semiconductor substrate; at least two gate electrodes formed over said semiconductor substrate, wherein a first sidewall of each of said gate electrodes defines a region separating said two gate electrodes; a gate oxide film formed between said semiconductor substrate and each of said gate electrodes; a first insulating film formed on each of said gate electrodes; a first conductive film formed on each of said first insulating films so that an edge of each of said first conductive films is formed above said first sidewalls of said gate electrodes, wherein each of said second conductive films acts as a barrier to prevent etching of said first insulating films adjacent to said first sidewalls of said gate electrodes; a second insulating film formed along said first sidewalls of said gate electrodes in such a way that said first conductive films are exposed and a portion of said substrate is exposed, a thickness of said second insulating film being roughly equal to a sum total thickness of said gate electrode, said first insulating film and said first conductive film, wherein a contact hole is formed in said second insulating film between said gate electrodes; and a wire having at least a second conductive film contacting said first conductive film and substrate within said contact hole, wherein said second conductive film is arranged on said second insulating film.

Claim 8

A semiconductor device, comprising: a semiconductor substrate; at least two gate electrodes formed over said semiconductor substrate, wherein a first sidewall of each of said gate electrodes defines a region separating said two gate electrodes; a gate oxide film formed between said semiconductor substrate and each of said gate electrodes; a first insulating film formed on each of said gate electrodes; a first conductive film formed on each of said first insulating films so that an edge of each of said first conductive films is formed above said first sidewalls of said gate electrodes, wherein each of said second conductive films acts as a barrier to prevent etching of said first insulating films adjacent to said first sidewalls of said gate electrodes; a second insulating film formed along said first sidewalls of said gate electrodes in such a way that said first conductive films are exposed and a portion of said substrate is exposed, a thickness of said second insulating film being roughly equal to a sum total thickness of said gate electrode, said first insulating film and said first conductive film, wherein a contact hole is formed in said second insulating film between said gate electrodes; and a wire having at least a second conductive film contacting said first conductive film and substrate within said contact hole, wherein said second conductive film is arranged on said second insulating film.

Claim 9

The semiconductor device of claim 6 wherein a sum total thickness of said first conductive film and said second conductive film contacting said first conductive film is large enough to prevent impurities implanted into said wire from being doped into said gate electrodes.