US5397897A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Infrared sensor and method for production thereof
Assignee: Terumo Corp
•
Filing: 1993-04-19
•
Granted: 1995-03-14
•
Expires: 2013-04-19
Abstract
Abstract An infrared sensor including a substrate provided with a bridging part; a detecting part composed of an infrared temperature-sensitive film formed in the bridging part; an electrode pad formed of a laminate film and an etchant-resistant electrically conductive film electrically connected to the infrared temperature-sensitive film; a first lid covering the detecting part and the bridging part; and a second lid covering another surface of the substrate and tightly closing a cavity formed between the substrate and the bridging part.
Inventors
- 👤 Kiyoshi Komatsu
- 👤 Takehisa Mori
- 👤 Atsushi Sone
- 👤 Mitsuteru Kimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:28
CPC Classifications
G; G01; G01J; G01J5/00; G01J5/02; G01J5/04; G01J5/041; G01J5/045; G01J5/10; G01J5/20; H; H10; H10F; H10F30/00; H10F30/10; H10F30/15
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
80 words
An infrared sensor comprising: a substrate provided with a bridging part, a detecting part composed of an infrared temperature-sensitive film formed in said bridging part, an electrode pad formed of a laminate film and an etchant-resistant electrically conductive film electrically connected to said infrared temperature-sensitive film, a first lid covering said detecting part and said bridging part, and a second lid covering another surface of said substrate and tightly closing a cavity formed between said substrate and said bridging part.
Claim 2
Dependent Claim
80 words
An infrared sensor comprising: a substrate provided with a bridging part, a detecting part composed of an infrared temperature-sensitive film formed in said bridging part, an electrode pad formed of a laminate film and an etchant-resistant electrically conductive film electrically connected to said infrared temperature-sensitive film, a first lid covering said detecting part and said bridging part, and a second lid covering another surface of said substrate and tightly closing a cavity formed between said substrate and said bridging part.
Claim 3
Dependent Claim
16 words
An infrared sensor according to claim 1, wherein said substrate is made of a semiconducting material.
Claim 4
Dependent Claim
35 words
An infrared sensor according to claim 1, wherein said bridging part is formed of a film made of at least one member selected from the group consisting of silicon oxides, silicon nitrides, and silicon oxynitrides.
Claim 5
Dependent Claim
34 words
An infrared sensor according to claim 1, wherein said infrared temperature-sensitive film is made of at least one member selected from the group consisting of amorphous germanium, amorphous silicon, polycrystalline silicon, and polycrystalline germanium.
Claim 6
Dependent Claim
26 words
An infrared sensor according to claim 1, wherein said laminate film is made of aluminum film and said etchant-resistant film is made of copper or gold.
Claim 7
Dependent Claim
16 words
An infrared sensor according to claim 1, wherein said cavity is kept in a vacuum state.
Claim 8
Dependent Claim
16 words
An infrared sensor according to claim 1, wherein said lids are made of a semiconducting material.
Claim 9
Dependent Claim
34 words
An infrared sensor according to claim 7, further comprising a second bridging part and a second infrared detecting part, said second bridging part and second infrared detecting part being provided with an infrared-intercepting film.
Claim 10
Dependent Claim
107 words
An infrared sensor comprising: a substrate; a first insulating film provided on a surface of said substrate; an infrared temperature-sensitive film formed on a part of said first insulating film; a second insulating film formed on said infrared temperature-sensitive film and a remaining part of said first insulating film, said second insulating film provided with a contact hole that reaches said infrared temperature-sensitive film; and an electrode formed on said second insulating film, said electrode electrically connected to said infrared temperature-sensitive film via said contact hole, and provided, above said second insulating film, with a part of increased width greater than the width of said contact hole.
Claim 11
Dependent Claim
107 words
An infrared sensor comprising: a substrate; a first insulating film provided on a surface of said substrate; an infrared temperature-sensitive film formed on a part of said first insulating film; a second insulating film formed on said infrared temperature-sensitive film and a remaining part of said first insulating film, said second insulating film provided with a contact hole that reaches said infrared temperature-sensitive film; and an electrode formed on said second insulating film, said electrode electrically connected to said infrared temperature-sensitive film via said contact hole, and provided, above said second insulating film, with a part of increased width greater than the width of said contact hole.
Claim 12
Dependent Claim
16 words
An infrared sensor according to claim 9, wherein said substrate is made of a semiconducting material.
Claim 13
Dependent Claim
34 words
An infrared sensor according to claim 9, wherein said infrared temperature-sensitive film is made of at least one member selected from the group consisting of amorphous germanium, amorphous silicon, polycrystalline silicon, and polycrystalline germanium.
Claim 14
Dependent Claim
36 words
An infrared sensor according to claim 9, wherein said first insulating film is formed of a film made of at least one member selected from the group consisting of silicon oxides, silicon nitrides, and silicon oxynitrides.
Claim 15
Dependent Claim
20 words
An infrared sensor according to claim 12, wherein said first insulating film is formed of a film of silicon oxynitrides.
Claim 16
Dependent Claim
36 words
An infrared sensor according to claim 9, wherein said second insulating film is formed of a film made of at least one member selected from the group consisting of silicon oxides, silicon nitrides, and silicon oxynitrides.
Claim 17
Dependent Claim
20 words
An infrared sensor according to claim 14, wherein said second insulating film is formed of a film of silicon oxynitrides.
References Cited (Backward Citations)
DE3536133A1
Cited
JPS63187128A
Cited
JPH01174918A
Cited
JPH02205730A
Cited
JPH02205729A
Cited
JPH02210230A
Cited
JPH03136379A
Cited
JPH03192773A
Cited
JPH03210437A
Cited
JPH03192774A
Cited
EP0453372A1
Cited
EP0523716A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-03-13 | 1998-09-12 | 1999-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-13 | 2002-09-12 | 2003-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-13 | 2006-09-12 | 2007-03-14 | $7700.00 | Window Closed / Lapsed |