EP0523716A1
Expired / Lapsed
EP
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Infrared sensor and method for production thereof
Assignee: Terumo Corp
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Filing: 1992-07-17
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Granted: —
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Expires: 2012-07-17
Abstract
Abstract An infrared sensor comprising a sensor substrate formed of a semiconducting material and at least one set of infrared sensing portions formed one each on the opposite surfaces of said sensor substrate, wherein said infrared sensing portions are superposed one each on bride portions formed on cavities formed one each on the opposite surfaces of said sensor substrate.
Inventors
- 👤 Takehisa C/O Terumo Kabushiki Kaisha Mori
- 👤 Kiyoshi C/O Terumo Kabushiki Kaisha Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 11:55
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; G; G01; G01J; G01J5/00; G01J5/10; G01J5/20
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
32 words
An infrared sensor comprising a sensor substrate formed of a semiconducting material and at least one set of infrared sensing portions formed one each on the opposite surfaces of said sensor substrate,.
Claim 2
Dependent Claim
33 words
An infrared sensor according to claim 1, wherein said infrared sensing portions are superposed one each on bridge portions formed on cavities formed one each on the opposite surfaces of said sensor substrate.
Claim 3
Dependent Claim
20 words
An infrared sensor according to claim 2, wherein said infrared sensing portions are each coated with an infrared absorbing film.
Claim 4
Dependent Claim
22 words
An infrared sensor according to claim 2, wherein said bridge portions are each formed of a film of an inorganic silicon compound.
Claim 5
Dependent Claim
30 words
An infrared sensor according to claim 4, wherein said inorganic silicon compound is at least one member selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.
Claim 6
Dependent Claim
15 words
An infrared sensor according to claim 4, wherein said inorganic silicon compouns is silicon oxynitride.
Claim 7
Dependent Claim
25 words
An infrared sensor according to claim 4, wherein the thickness of said inorganic silicon compound film is in the range between 0.1 and 5 µm.
Claim 8
Dependent Claim
33 words
An infrared sensor according to claim 1, wherein said infrared sensing portions are each formed of at least one member selected from the group consisting of amorphous germanium, amorphous silicon, and polycrystalline silicon.
Claim 9
Dependent Claim
20 words
An infrared sensor according to claim 3, wherein said infrared absorbing films are each formed of gold black or carbon.
Claim 10
Independent Claim
109 words
A method for the production of an infrared sensor, comprising a step of advancing reactive gases into contact with a semiconductor substrate thereby forming inorganic silicon compound films one each on the opposite surfaces of said semiconductor substrate, a step of subjecting said inorganic silicon compound films to a patterning treatment, a step of superposing infrared sensing portions one each on the resultant patterned inorganic silicon compound films, and a step of selectively removing said semiconductor substrate underlying said patterned inorganic silicon compound films thereby forming cavities and consequently forming bridge portions formed of said inorganic silicon compound film one each on the opposite surfaces of said semiconductor substrate.
Claim 11
Dependent Claim
29 words
A method according to claim 10, wherein said inorganic silicon compound is at least one member selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.
Claim 12
Dependent Claim
14 words
A method according to claim 10, wherein said inorganic silicon compound is silicon oxynitride.
Claim 13
Dependent Claim
24 words
A method according to claim 10, wherein the thickness of said inorganic silicon compound film is in the range between 0.1 and 5 µm.
Claim 14
Dependent Claim
32 words
A method according to claim 10, wherein said infrared sensing portions are each formed of at least one member selected from the group consisting of amorphous germanium, amorphous silicon, and polycrystalline silicon.
Claim 15
Dependent Claim
18 words
A method according to claim 10, wherein said infrared absorbing films are formed of gold black or carbon.
References Cited (Backward Citations)
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