Patent US5397731A successfully refreshed from Google Patents.
US5397731A
Expired / Lapsed
US
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Method of manufacturing semiconductor integrated circuit device
Assignee: NEC Corp
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Filing: 1994-06-24
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Granted: 1995-03-14
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Expires: 2014-06-24
Abstract
Abstract A method of manufacturing a semiconductor integrated circuit device includes the steps of: sequentially forming a silicon oxide film, a silicon nitride film, a polysilicon film; and a protective film on a silicon substrate, etching and removing the protective film from a shallow groove formation region to expose a surface of the polysilicon film; etching and removing the protective film, the polysilicon film, the silicon nitride film, and the silicon oxide film from a deep groove formation region to expose asurface of the silicon substrate; etching the silicon substrate and the polysilicon film, both of which are exposed, using the protective film as a mask to form agroove having a predetermined depth in the deep groove formation region; etching and removing at least the silicon oxide film left in the shallow groove formation region to expose a surface of the silicon substrate; and simultaneously etching the silicon substrate in the deep and shallow groove formation regions using the protective film as a mask to form deep and shallow grooves.
Inventors
- 👤 Hisashi Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:41
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/041; H10W10/10; H10W10/17; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
171 words
A method of manufacturing a semiconductor integrated circuit device, comprising the steps of: sequentially forming a silicon oxide film, a silicon nitride film, a polysilicon film, and a protective film on a silicon substrate; etching and removing said protective film from a shallow groove formation region to expose a surface of said polysilicon film; etching and removing said protective film, said polysilicon film, said silicon nitride film, and said silicon oxide film from a deep groove formation region to expose a surface of said silicon substrate; etching said silicon substrate and said polysilicon film, both of which are exposed, using said protective film as a mask to form a groove having a predetermined depth in said deep groove formation region; etching and removing at least said silicon oxide film left in said shallow groove formation region to expose a surface of said silicon substrate; and simultaneously etching said silicon substrate in said deep and shallow groove formation regions using said protective film as a mask to form deep and shallow grooves.
Claim 2
Independent Claim
171 words
A method of manufacturing a semiconductor integrated circuit device, comprising the steps of: sequentially forming a silicon oxide film, a silicon nitride film, a polysilicon film, and a protective film on a silicon substrate; etching and removing said protective film from a shallow groove formation region to expose a surface of said polysilicon film; etching and removing said protective film, said polysilicon film, said silicon nitride film, and said silicon oxide film from a deep groove formation region to expose a surface of said silicon substrate; etching said silicon substrate and said polysilicon film, both of which are exposed, using said protective film as a mask to form a groove having a predetermined depth in said deep groove formation region; etching and removing at least said silicon oxide film left in said shallow groove formation region to expose a surface of said silicon substrate; and simultaneously etching said silicon substrate in said deep and shallow groove formation regions using said protective film as a mask to form deep and shallow grooves.
Claim 3
Dependent Claim
78 words
A method according to claim 1, further comprising the step of forming a thin silicon oxide film before the step of etching and removing said protective film, said polysilicon film, said silicon nitride film, and said silicon oxide film from said deep groove formation region to expose said surface of said silicon substrate but after the step of etching and removing said protective film from said shallow groove formation region to expose said surface of said polysilicon film.
Claim 4
Dependent Claim
28 words
A method according to claim 1, further comprising the step of burying said shallow and deep grooves with an insulator after said shallow and deep grooves are formed.
Claim 5
Dependent Claim
68 words
A method according to claim 1, wherein the step of etching and removing said protective film, said polysilicon film, said silicon nitride film, and said silicon oxide film from said deep groove formation region to expose said surface of said silicon substrate is performed before the step of etching and removing said protective film from said shallow groove formation region to expose said surface of said polysilicon film.
Claim 6
Dependent Claim
28 words
A method according to claim 2, further comprising the step of burying said shallow and deep grooves with an insulator after said shallow and deep grooves are formed.
Claim 7
Dependent Claim
68 words
A method according to claim 2, wherein the step of etching and removing said protective film, said polysilicon film, said silicon nitride film, and said silicon oxide film from said deep groove formation region to expose said surface of said silicon substrate is performed before the step of etching and removing said protective film from said shallow groove formation region to expose said surface of said polysilicon film.
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