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US5396098A
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Structure and method of manufacturing a semiconductor memory device
Assignee: Samsung Electronics Co Ltd
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Filing: 1993-10-07
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Granted: 1995-03-07
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Expires: 2013-10-07
Abstract
Abstract In a semiconductor memory device, and in particular in a NAND-type ROM memory cell, the transistors of a memory cell region and a peripheral circuit portion are manufactured to include a first and second impurity regions. The second impurity region has a higher impurity density impurity than the first impurity region. A third impurity region is added which has a higher impurity density and shallower depth than the impurity density of the first impurity region. Accordingly, the conventional transistor structure of the peripheral circuit portion is maintained while the transistors of the memory cell are optimized to have ideal electrical characteristics, including an increased current driving capability.
Inventors
- 👤 Sei-jin Kim
- 👤 Hyungbok Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 19:39
CPC Classifications
H; H10; H10B; H10B20/00; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0135; H10D30/00; H10D30/60; H10D30/601; H10D30/605; H10D84/0147
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
214 words
A semiconductor transistor on a semiconductor substrate of a first conductive type comprising: a gate electrode having a sidewall; a channel region under said gate electrode having a first end and a second end; a drain region formed adjacent said first end of said channel region; a source region formed adjacent said second end of said channel region; said drain and source regions each including: i) a first impurity region of a second conductive type having a first impurity density; ii) a second impurity region of said second conductive type having a second impurity density formed adjacent said first impurity region but disposed further from a respective one of said first end and said second end of said channel region than said first impurity region, said second impurity density being higher than said first impurity density; iii) a third impurity region of said second conductive type having a third impurity density formed within said first impurity region, said third impurity density being lower than said second impurity density, said first impurity region being closer to and extending further from said respective one of said first end and said second end of said channel region, in a lateral direction, than said third impurity region, and said first impurity region fully surrounding said third impurity region.
Claim 2
Dependent Claim
214 words
A semiconductor transistor on a semiconductor substrate of a first conductive type comprising: a gate electrode having a sidewall; a channel region under said gate electrode having a first end and a second end; a drain region formed adjacent said first end of said channel region; a source region formed adjacent said second end of said channel region; said drain and source regions each including: i) a first impurity region of a second conductive type having a first impurity density; ii) a second impurity region of said second conductive type having a second impurity density formed adjacent said first impurity region but disposed further from a respective one of said first end and said second end of said channel region than said first impurity region, said second impurity density being higher than said first impurity density; iii) a third impurity region of said second conductive type having a third impurity density formed within said first impurity region, said third impurity density being lower than said second impurity density, said first impurity region being closer to and extending further from said respective one of said first end and said second end of said channel region, in a lateral direction, than said third impurity region, and said first impurity region fully surrounding said third impurity region.
Claim 3
Dependent Claim
222 words
A semiconductor memory device having a memory cell portion and a peripheral circuit portion on a semiconductor substrate of a first conductive type, wherein a transistor of the memory cell portion comprises: a gate electrode having a sidewall; a channel region under said gate electrode having a first end and a second end; a drain region formed adjacent said first end of said channel region; a source region formed adjacent said second end of said channel region; said drain and source regions each including: i) a first impurity region of a second conductive type having a first impurity density; ii) a second impurity region of said second conductive type having a second impurity density formed adjacent said first impurity region but disposed further from a respective one of said first end and said second end of said channel region than said first impurity region, said second impurity density being higher than said first impurity density; iii) a third impurity region of said second conductive type having a third impurity density formed within said first impurity region, said first impurity region being closer to and extending further from said respective one of said first end and said second end of said channel region, in a lateral direction, than said third impurity region, and said first impurity region fully surrounding said third impurity region.
Claim 4
Dependent Claim
222 words
A semiconductor memory device having a memory cell portion and a peripheral circuit portion on a semiconductor substrate of a first conductive type, wherein a transistor of the memory cell portion comprises: a gate electrode having a sidewall; a channel region under said gate electrode having a first end and a second end; a drain region formed adjacent said first end of said channel region; a source region formed adjacent said second end of said channel region; said drain and source regions each including: i) a first impurity region of a second conductive type having a first impurity density; ii) a second impurity region of said second conductive type having a second impurity density formed adjacent said first impurity region but disposed further from a respective one of said first end and said second end of said channel region than said first impurity region, said second impurity density being higher than said first impurity density; iii) a third impurity region of said second conductive type having a third impurity density formed within said first impurity region, said first impurity region being closer to and extending further from said respective one of said first end and said second end of said channel region, in a lateral direction, than said third impurity region, and said first impurity region fully surrounding said third impurity region.
Claim 5
Dependent Claim
24 words
The semiconductor memory device according to claim 2, wherein said first impurity region is closer to said channel region than said second impurity region.
Claim 6
Dependent Claim
49 words
The semiconductor memory device according to claim 2, wherein a transistor of said peripheral circuit portion comprises a lightly doped drain structure having a first impurity region closer to a respective one of said first end and said second end of said channel region than a second impurity region.
Claim 7
Dependent Claim
32 words
The semiconductor memory device according to claim 2, wherein a transistor of said peripheral circuit portion comprises a double-diffused drain structure in which a first impurity region surrounds a second impurity region.
Claim 8
Dependent Claim
20 words
The semiconductor memory device according to claim 2, wherein said third impurity density is lower than said second impurity density.
References Cited (Backward Citations)
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