US5395783A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10
Assignee: Texas Instruments Inc
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Filing: 1993-02-16
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Granted: 1995-03-07
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Expires: 2013-02-16
Abstract
Abstract Reduced soft errors in charge-sensitive circuit elements such as volatile memory cells 200 occur by using boron-11 to the exclusion of boron-10 or essentially free of boron-10 in borosilicate glass 230, 240 deposited on the substrate 206 directly over the arrays of memory cells. Boron-10 exhibits a high likelihood of fission to release a 1.47 MeV alpha particle upon capture of a naturally occurring cosmic ray neutron. This capture occurs frequently in boron-10 because of its high neutron capture cross-section. Boron-11 does not fission.
Inventors
- 👤 Robert C. Baumann
- 👤 Timothy Z. Hossain
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:41
CPC Classifications
H; H10; H10W; H10W42/00; H10W42/20; H10W42/25; Y; Y10; Y10S; Y10S257/00; Y10S257/921; Y10S438/00; Y10S438/953
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
56 words
A process of making a dynamic random access memory part comprising: A. forming an array of memory cells in a semiconductor substrate with each cell including a pass transistor and a capacitor; and B. forming a layer of borosilicate glass over at least the capacitor with the boron in the borosilicate glass consisting essentially of boron-11.
Claim 2
Dependent Claim
56 words
A process of making a dynamic random access memory part comprising: A. forming an array of memory cells in a semiconductor substrate with each cell including a pass transistor and a capacitor; and B. forming a layer of borosilicate glass over at least the capacitor with the boron in the borosilicate glass consisting essentially of boron-11.
Claim 3
Dependent Claim
37 words
A process of forming a coating comprising: A. forming a substrate of material consisting of silicon; and B. forming a coating of borosilicate glass on the substrate, the boron in the borosilicate glass consisting essentially of boron-11.
Claim 4
Dependent Claim
37 words
A process of forming a coating comprising: A. forming a substrate of material consisting of silicon; and B. forming a coating of borosilicate glass on the substrate, the boron in the borosilicate glass consisting essentially of boron-11.
Claim 5
Dependent Claim
49 words
A process of making a device comprising: forming an alpha particle charge sensitive part, including forming a dynamic memory cell having a single transistor connected to a charge sensitive capacitor; and forming a boron-containing material proximate to the alpha particle charge sensitive capacitor, the boron consisting essentially of boron-11.
Claim 6
Dependent Claim
49 words
A process of making a device comprising: forming an alpha particle charge sensitive part, including forming a dynamic memory cell having a single transistor connected to a charge sensitive capacitor; and forming a boron-containing material proximate to the alpha particle charge sensitive capacitor, the boron consisting essentially of boron-11.
Claim 7
Dependent Claim
17 words
The process of claim 3 in which forming the dynamic memory cell includes forming a trench capacitor.
Claim 8
Dependent Claim
16 words
The process of claim 3 in which forming the boron-containing material includes forming a borosilicate glass.
Claim 9
Dependent Claim
23 words
The process of claim 3 in which forming the boron-containing material includes forming the boron-containing material over the alpha particle charge sensitive parts.
Claim 10
Dependent Claim
17 words
The process of claim 3 including forming the alpha particle charge sensitive part of a semiconducting material.
Claim 11
Dependent Claim
33 words
The process of claim 3 including forming the alpha particle charge sensitive part of a substrate semiconducting material and forming the boron-containing material of borosilicate glass over the alpha particle charge sensitive part.
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JPS60183768A
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JPS62281358A
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JPH02114665A
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JPH04334015A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-03-06 | 1998-09-05 | 1999-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-06 | 2002-09-05 | 2003-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-06 | 2006-09-05 | 2007-03-07 | $7700.00 | Window Closed / Lapsed |