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US5394423A
Expired / Lapsed
US
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Surface emitting semiconductor laser
Assignee: NEC Corp
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Filing: 1994-01-26
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Granted: 1995-02-28
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Expires: 2014-01-26
Abstract
Abstract A first insulation film is provided on the x axis side surfaces of a mesa on a substrate of a surface emitting semiconductor laser, and a second insulation film is provided on the y axis side surfaces of the mesa. The x and y axes are orthogonal to each other. The first and second insulation films are formed at different temperatures, so that stress applied to an active layer is different between the x and y axis directions. Consequently, the polarization of an output light is controlled to be on a selected axis from the x and y axis directions.
Inventors
- 👤 Kenichi Kasahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:52
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18355; H01S2301/00; H01S2301/17; H01S2301/176; H01S5/18341; H01S5/18344; H01S5/18347; H01S5/1835; H01S5/18352; H01S5/30; H01S5/32; H01S5/3201
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
129 words
A surface emitting semiconductor laser, comprising: a mesa structure provided on a semiconductor substrate, said mesa structure comprising a first cladding layer of a first conductivity type, an active layer of said first conductivity type, and a second cladding layer of a second conductivity type; means for applying an electric field across said mesa to emit an output light in a direction orthogonal to said semiconductor substrate; a first insulation film provided on x axis side surfaces of said mesa, said first insulation film being formed at a first temperature; and a second insulation film provided on y axis side surfaces of said mesa, said y axis being orthogonal to said x axis, and said second insulation film being formed at a second temperature different from said first temperature.
Claim 2
Dependent Claim
129 words
A surface emitting semiconductor laser, comprising: a mesa structure provided on a semiconductor substrate, said mesa structure comprising a first cladding layer of a first conductivity type, an active layer of said first conductivity type, and a second cladding layer of a second conductivity type; means for applying an electric field across said mesa to emit an output light in a direction orthogonal to said semiconductor substrate; a first insulation film provided on x axis side surfaces of said mesa, said first insulation film being formed at a first temperature; and a second insulation film provided on y axis side surfaces of said mesa, said y axis being orthogonal to said x axis, and said second insulation film being formed at a second temperature different from said first temperature.
Claim 3
Dependent Claim
19 words
A surface emitting semiconductor laser, according to claim 1, wherein: said first and second insulation films are SiN films.
Claim 4
Dependent Claim
28 words
A surface emitting semiconductor laser, according to claim 1, wherein: said first insulation film is a SiN film, and said second insulation film is a SiO 2 film.
Claim 5
Dependent Claim
19 words
A surface emitting semiconductor laser, according to claim 1, wherein: said first temperature is higher than said second temperature.
References Cited (Backward Citations)
JPS54125990A
Cited
JPH0250380A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-27 | 1998-08-29 | 1999-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-27 | 2002-08-29 | 2003-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-27 | 2006-08-29 | 2007-02-28 | $7700.00 | Window Closed / Lapsed |