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US5394357A
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Non-volatile semiconductor memory device
Assignee: Individual
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Filing: 1993-03-01
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Granted: 1995-02-28
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Expires: 2013-03-01
Abstract
Abstract A non-volatile semiconductor memory cell includes a floating gate dielectrically disposed between a first and a second control gate. The non-volatile memory cell can only be addressed for programming or deprogramming by the simultaneous energization of the first and second control gates. With this unique feature, any memory cell in an memory array can be randomly accessed. Moreover, the two control gates associated with each of the floating gate also increase the coupling capacitances, thereby speeding up operations. The non-volatile memory device of the present invention is ideal to be used for large scale integration applications in which memory cells are arranged in a NAND structure.
Inventors
- 👤 Shih-Chiang Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:01
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0425; H; H10; H10B; H10B41/00; G11C16/0433; H10B69/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683; H10D30/684; H10D30/685; H10D30/6891; H10D30/6892
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
233 words
A non-volatile memory cell comprising: a semiconductor substrate of a first conductivity type; a source formed in said semiconductor substrate; a drain formed is said semiconductor substrate and spaced from said source; a diffusion region of a second conductivity type formed in said semiconductor substrate and between said source and said drain; channels formed between said diffusion region and said drain, and between said diffusion region and said source; a first control gate dielectrically disposed atop said diffusion region; a floating gate dielectrically disposed atop said first control gate and said channels; and a second control gate dielectrically disposed atop said floating gate; wherein when said first and second control gates are substantially simultaneously energized to a first set of potential values, electrical charges are couplingly induced into said floating gate from said channels by the Fowler-Norheim tunneling effect allowing said floating gate to couplingly vary the conductivity of said channels after the de-energization of said control gates, thereby enabling the non-volatile memory cell to be programmable, and wherein when said first and second control gates are substantially simultaneously energized to a second set of potential values, electrical charges are coupling induced out of said floating gate to said channel by the Fowler-Nordheim tunneling effect allowing said floating gate to couplingly vary the conductivity of said channels after the de-energization of said control gates, thereby enabling the nonvolatile memory cell to be deprogrammable.
Claim 2
Dependent Claim
233 words
A non-volatile memory cell comprising: a semiconductor substrate of a first conductivity type; a source formed in said semiconductor substrate; a drain formed is said semiconductor substrate and spaced from said source; a diffusion region of a second conductivity type formed in said semiconductor substrate and between said source and said drain; channels formed between said diffusion region and said drain, and between said diffusion region and said source; a first control gate dielectrically disposed atop said diffusion region; a floating gate dielectrically disposed atop said first control gate and said channels; and a second control gate dielectrically disposed atop said floating gate; wherein when said first and second control gates are substantially simultaneously energized to a first set of potential values, electrical charges are couplingly induced into said floating gate from said channels by the Fowler-Norheim tunneling effect allowing said floating gate to couplingly vary the conductivity of said channels after the de-energization of said control gates, thereby enabling the non-volatile memory cell to be programmable, and wherein when said first and second control gates are substantially simultaneously energized to a second set of potential values, electrical charges are coupling induced out of said floating gate to said channel by the Fowler-Nordheim tunneling effect allowing said floating gate to couplingly vary the conductivity of said channels after the de-energization of said control gates, thereby enabling the nonvolatile memory cell to be deprogrammable.
Claim 3
Dependent Claim
19 words
The non-volatile memory cell as set forth in claim 1 wherein said first and second control gates comprise polysilicon.
Claim 4
Dependent Claim
20 words
The non-volatile memory cell as set forth in claim 1 wherein said first and second control gates comprise refractory silicide.
Claim 5
Dependent Claim
19 words
The non-volatile memory cell as set forth in claim 1 wherein said first and second control gates comprise metal.
Claim 6
Dependent Claim
229 words
A memory cell array formed in a semiconductor substrate including a plurality of non-volatile memory cells, each of said non-volatile memory cell comprising: a source formed in said semiconductor substrate; a drain formed in said semiconductor substrate spaced from said source; a diffusion region formed in said semiconductor substrate, and between said source and said drain; channels formed between said diffusion region and said drain, and between said diffusion region and said source; a first control gate dielectrically disposed atop said diffusion region; a floating gate dielectrically disposed atop said first control gate and said channels; and a second control gate dielectrically disposed atop said floating gate; wherein said plurality of non-volatile memory cells being disposed in the semiconductor substrate in a matrix of rows and columns with each of said first control gates in each of said rows of said matrix being electrically connected together, and with each of said second control gates in each of said columns of said matrix being electrically connected together, thereby allowing each of said non-volatile memory cells to be selectively programmed when the selected first and second control gates are substantially simultaneously energized to a first set of potential values, and thereby allowing each of said non-volatile memory cells to be selectively deprogrammed when the selected first and second control gates are substantially simultaneously energized to a second set of potential values.
Claim 7
Dependent Claim
229 words
A memory cell array formed in a semiconductor substrate including a plurality of non-volatile memory cells, each of said non-volatile memory cell comprising: a source formed in said semiconductor substrate; a drain formed in said semiconductor substrate spaced from said source; a diffusion region formed in said semiconductor substrate, and between said source and said drain; channels formed between said diffusion region and said drain, and between said diffusion region and said source; a first control gate dielectrically disposed atop said diffusion region; a floating gate dielectrically disposed atop said first control gate and said channels; and a second control gate dielectrically disposed atop said floating gate; wherein said plurality of non-volatile memory cells being disposed in the semiconductor substrate in a matrix of rows and columns with each of said first control gates in each of said rows of said matrix being electrically connected together, and with each of said second control gates in each of said columns of said matrix being electrically connected together, thereby allowing each of said non-volatile memory cells to be selectively programmed when the selected first and second control gates are substantially simultaneously energized to a first set of potential values, and thereby allowing each of said non-volatile memory cells to be selectively deprogrammed when the selected first and second control gates are substantially simultaneously energized to a second set of potential values.
Claim 8
Dependent Claim
220 words
A non-volatile memory cell comprising; a semiconductor substrate; a drain formed in said semiconductor substrate; a source formed in said semiconductor substrate and spaced from said source; a diffusion region formed in said semiconductor substrate, said diffusion region being formed between said source and said drain and defining at least one channel therebetween; a first control gate dielectrically disposed atop said diffusion region; a floating gate dielectrically disposed atop said first control gate and said at least one channel; and a second control gate dielectrically disposed atop said first control gate; wherein when said first and second control gates are substantially simultaneously energized to a first set of potential values, electrical charges are couplingly induced into said floating gate from said at least one channel allowing said floating gate to couplingly vary the conductivity of said at least one channel after the de-energization of said control gates, thereby enabling the non-volatile memory cell to be programmable, and wherein when said first and second control gates are substantially simultaneously energized to a second set of potential values, electrical charges are coupling induced out of said floating gate to said at least one channel allowing said floating gate to couplingly vary the conductivity of said channel after the de-energization of said control gates, thereby enabling the non-volatile memory cell to be deprogrammable.
Claim 9
Dependent Claim
220 words
A non-volatile memory cell comprising; a semiconductor substrate; a drain formed in said semiconductor substrate; a source formed in said semiconductor substrate and spaced from said source; a diffusion region formed in said semiconductor substrate, said diffusion region being formed between said source and said drain and defining at least one channel therebetween; a first control gate dielectrically disposed atop said diffusion region; a floating gate dielectrically disposed atop said first control gate and said at least one channel; and a second control gate dielectrically disposed atop said first control gate; wherein when said first and second control gates are substantially simultaneously energized to a first set of potential values, electrical charges are couplingly induced into said floating gate from said at least one channel allowing said floating gate to couplingly vary the conductivity of said at least one channel after the de-energization of said control gates, thereby enabling the non-volatile memory cell to be programmable, and wherein when said first and second control gates are substantially simultaneously energized to a second set of potential values, electrical charges are coupling induced out of said floating gate to said at least one channel allowing said floating gate to couplingly vary the conductivity of said channel after the de-energization of said control gates, thereby enabling the non-volatile memory cell to be deprogrammable.
Claim 10
Dependent Claim
28 words
The non-volatile memory cell as set forth in claim 6 wherein said first and second control gates are disposed on the semiconductor substrate substantially perpendicular to each other.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-27 | 1998-08-29 | 1999-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-27 | 2002-08-29 | 2003-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-27 | 2006-08-29 | 2007-02-28 | $7700.00 | Window Closed / Lapsed |