Abstract An integrated semiconductor configuration includes a semiconductor substrate of a first conductivity type being connected to a first supply potential, having a first region in which switching stages with signal terminals are disposed, and having at least a second region in which at least one connecting line is disposed for connecting the signal terminals of the switching stages. A multiplicity of doping zones are disposed in the second region and have a second conductivity type complementary to the first conductivity type. The doping zones are connected to a second supply potential, the doping zones have a total surface area, and at least a portion of the total surface area is located under the at least one connecting line. The first and second regions are strip-shaped. The first and second regions have long sides bordering one another. The second region has a width and each of the doping zones of the second region extend over the width of the second region. The semiconductor substrate has a segment of the first conductivity type being located between each two of the doping zones.
An integrated semiconductor configuration comprising: a semiconductor substrate of a first conductivity type being connected to a first supply potential, having a first region in which switching stages with signal terminals are disposed, and having at least a second region in which at least one connecting line is disposed for connecting said signal terminals of said switching stages; a multiplicity of doping zones being disposed in said second region and having a second conductivity type complementary to the first conductivity type, said doping zones being connected to a second supply potential, said doping zones having a total surface area, and at least a portion of said total surface area being located under said at least one connecting line; said first and second regions being strip-shaped; said first and second regions having long sides bordering one another; said second region having a width and each of said doping zones of said second region extending over the width of said second region; and said semiconductor substrate having a segment of the first conductivity type being located between each two of said doping zones.
Claim 2
Dependent Claim
181 words
An integrated semiconductor configuration comprising: a semiconductor substrate of a first conductivity type being connected to a first supply potential, having a first region in which switching stages with signal terminals are disposed, and having at least a second region in which at least one connecting line is disposed for connecting said signal terminals of said switching stages; a multiplicity of doping zones being disposed in said second region and having a second conductivity type complementary to the first conductivity type, said doping zones being connected to a second supply potential, said doping zones having a total surface area, and at least a portion of said total surface area being located under said at least one connecting line; said first and second regions being strip-shaped; said first and second regions having long sides bordering one another; said second region having a width and each of said doping zones of said second region extending over the width of said second region; and said semiconductor substrate having a segment of the first conductivity type being located between each two of said doping zones.
Claim 3
Dependent Claim
39 words
The integrated semiconductor configuration according to claim 1, wherein said doping zones are rectangular and have identical dimensions including lengths, and said doping zones are mutually spaced apart by spacings being equal to the lengths of said doping zones.
Claim 4
Dependent Claim
46 words
The integrated semiconductor configuration according to claim 2, wherein said first region has a doping zone of the second conductivity type on the long side thereof extending over the length of the long side, and said doping zones of said first and second regions are connected.