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US5393352A
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Pb/Bi-containing high-dielectric constant oxides using a non-P/Bi-containing perovskite as a buffer layer
Assignee: Texas Instruments Inc
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Filing: 1993-09-27
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Granted: 1995-02-28
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Expires: 2013-09-27
Abstract
Abstract This is a method for fabricating a structure useful in semiconductor circuitry. The method comprises: growing a buffer layer of non-Pb/Bi-containing high-dielectric constant oxide layer directly or indirectly on a semiconductor substrate; and depositing a Pb/Bi-containing high-dielectric constant oxide on the buffer layer. Alternately this may be a structure useful in semiconductor circuitry, comprising: a buffer layer 26 of non-lead-containing high-dielectric constant oxide layer directly or indirectly on a semiconductor substrate 10; and a lead-containing high-dielectric constant oxide 28 on the buffer layer. Preferably a germanium layer 12 is epitaxially grown on the semiconductor substrate and the buffer layer is grown on the germanium layer. When the substrate is silicon, the non-Pb/Bi-containing high-dielectric constant oxide layer is preferably less than about 10 nm thick. A second non-Pb/Bi-containing high-dielectric constant oxide layer 30 may be grown on top of the Pb/Bi-containing high-dielectric constant oxide and a conducting layer (top electrode 32) may also be grown on the second non-Pb/Bi-containing high-dielectric constant oxide layer.
Inventors
- 👤 Scott R. Summerfelt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:26
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D64/01342; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10P14/65; H10P14/6502; H10P14/6506; H10P14/63; H10P14/6326; H10P14/6349; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69396; H10P14/69398; Y; Y10; Y10S; Y10S148/00; Y10S148/014; Y10S148/118; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
52 words
A method for fabricating a structure useful in semiconductor circuitry comprising: growing a germanium layer directly or indirectly on a semiconductor substrate; growing a perovskite buffer layer of Pb and Bi free, high-dielectric constant oxide on said germanium layer; and depositing a Pb and/or Bi-containing high-dielectric constant oxide on said buffer layer.
Claim 2
Independent Claim
52 words
A method for fabricating a structure useful in semiconductor circuitry comprising: growing a germanium layer directly or indirectly on a semiconductor substrate; growing a perovskite buffer layer of Pb and Bi free, high-dielectric constant oxide on said germanium layer; and depositing a Pb and/or Bi-containing high-dielectric constant oxide on said buffer layer.
Claim 3
Dependent Claim
10 words
The method of claim 1, wherein said substrate is silicon.
Claim 4
Dependent Claim
22 words
The method of claim 1, wherein said Pb and Bi free, high-dielectric constant oxide layer is less than about 10 nm thick.
Claim 5
Dependent Claim
11 words
The method of claim 1, wherein said substrate is gallium arsenide.
Claim 6
Dependent Claim
28 words
The method of claim 1, wherein a second Pb and Bi free, high-dielectric constant oxide layer is grown on top of said Pb and/or Bi-containing high-dielectric constant oxide.
Claim 7
Dependent Claim
22 words
The method of claim 5, wherein a conducting layer is grown on said second Pb and Bi free, high-dielectric constant oxide layer.
Claim 8
Dependent Claim
13 words
The method of claim 1, wherein both said high-dielectric constant oxides are titanates.
Claim 9
Dependent Claim
18 words
The method of claim 7, wherein said Pb and Bi free, high-dielectric constant oxide is barium strontium titanate.
Claim 10
Dependent Claim
17 words
The method of claim 1, wherein said Pb and/or Bi-containing high-dielectric constant oxide is lead zirconate titanate.
Claim 11
Dependent Claim
14 words
The method of claim 1, wherein both said high-dielectric constant oxides are ferroelectric oxides.
Claim 12
Dependent Claim
17 words
The method of claim 1, wherein said Pb and Bi free, high-dielectric constant oxide is epitaxially grown.
Claim 13
Dependent Claim
16 words
The method of claim 11, wherein said Pb and/or Bi-containing high-dielectric constant oxide is epitaxially grown.
Claim 14
Dependent Claim
38 words
The method of claim 1, wherein said germanium layer is grown on a non-single crystal silicon dioxide, a silicon nitride, or silicon dioxide/silicon nitride layer and said non-single crystal layer is directly or indirectly on said semiconductor substrate.
Claim 15
Dependent Claim
11 words
The method of claim 1, wherein said structure is a capacitor.
Claim 16
Dependent Claim
12 words
The method of claim 1, wherein said structure is a MOS transistor.
Claim 17
Dependent Claim
12 words
The method of claim 10, wherein said structure is a MOS transistor.
Claim 18
Dependent Claim
16 words
The method of claim 1, wherein said structure is a pixel in a light detecting array.
Claim 19
Dependent Claim
16 words
The method of claim 1, wherein said structure is a non-volatile, non-destructive readout, field effect memory.
Claim 20
Dependent Claim
12 words
The method of claim 1, wherein said germanium layer is epitaxially grown.
Claim 21
Independent Claim
52 words
A method for fabricating a structure useful in semiconductor circuitry, comprising: depositing a metal layer directly or indirectly on a semiconductor substrate; growing a perovskite buffer layer of Pb and Bi free, high-dielectric constant oxide on said metal layer; and depositing a Pb and/or Bi-containing high-dielectric constant oxide on said buffer layer.
Claim 22
Independent Claim
52 words
A method for fabricating a structure useful in semiconductor circuitry, comprising: depositing a metal layer directly or indirectly on a semiconductor substrate; growing a perovskite buffer layer of Pb and Bi free, high-dielectric constant oxide on said metal layer; and depositing a Pb and/or Bi-containing high-dielectric constant oxide on said buffer layer.
Claim 23
Dependent Claim
10 words
The method of claim 20, wherein said substrate is silicon.
Claim 24
Dependent Claim
22 words
The method of claim 20, wherein said Pb and Bi free, high-dielectric constant oxide layer is less than about 10 nm thick.
Claim 25
Dependent Claim
11 words
The method of claim 20, wherein said substrate is gallium arsenide.
Claim 26
Dependent Claim
28 words
The method of claim 20, wherein a second Pb and Bi free, high-dielectric constant oxide layer is grown on top of said Pb and/or Bi-containing high-dielectric constant oxide.
Claim 27
Dependent Claim
22 words
The method of claim 24, wherein a conducting layer is grown on said second Pb and Bi free, high-dielectric constant oxide layer.
Claim 28
Dependent Claim
13 words
The method of claim 20, wherein both said high-dielectric constant oxides are titanates.
Claim 29
Dependent Claim
18 words
The method of claim 26, wherein said Pb and Bi free, high-dielectric constant oxide is barium strontium titanate.
Claim 30
Dependent Claim
17 words
The method of claim 20, wherein said Pb and/or Bi-containing high-dielectric constant oxide is lead zirconate titanate.
Claim 31
Dependent Claim
14 words
The method of claim 20, wherein both said high-dielectric constant oxides are ferroelectric oxides.
Claim 32
Dependent Claim
17 words
The method of claim 20, wherein said Pb and Bi free, high-dielectric constant oxide is epitaxially grown.
Claim 33
Dependent Claim
16 words
The method of claim 30 wherein said Pb and/or Bi-containing high-dielectric constant oxide is epitaxially grown.
Claim 34
Dependent Claim
11 words
The method of claim 20, wherein said structure is a capacitor.
Claim 35
Dependent Claim
12 words
The method of claim 20, wherein said structure is a MOS transistor.
Claim 36
Dependent Claim
12 words
The method of claim 29, wherein said structure is a MOS transistor.
Claim 37
Dependent Claim
16 words
The method of claim 20, wherein said structure is a pixel in a light detecting array.
Claim 38
Dependent Claim
16 words
The method of claim 20, wherein said structure is a non-volatile, non-destructive readout, field effect memory.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2002-02-27 | 2002-08-29 | 2003-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-27 | 2006-08-29 | 2007-02-28 | $7700.00 | Window Closed / Lapsed |