Patent US5392232A successfully refreshed from Google Patents.
US5392232A
Expired / Lapsed
US
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Semiconductor memory device
Assignee: Samsung Electronics Co Ltd
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Filing: 1993-08-09
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Granted: 1995-02-21
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Expires: 2013-08-09
Abstract
Abstract A semiconductor memory device including a memory cell array which is formed of each of memory cells connected to intersection of a plurality of bit lines and word lines is provided such that, during designing the layout, a length of a storage electrode of the outermost memory cell in the memory cell array is longer than that of a storage electrode of an inner memory cell, or a spacing between two bit lines in the periphery of the memory cell array is longer than that between bit lines in the inner portion of the memory cell array, or a width of an active region of the outermost memory cell is wider than that of an active region of the inner memory cell, thereby forming a metal layer having an excellent step coverage by means of only the layout arrangement without additional processes while being not concerned about the structure of a storage electrode.
Inventors
- 👤 Kyeong T. Kim
- 👤 Ji H. Ahn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:36
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; G; G11; G11C; G11C5/00; G11C5/02; G11C7/00; G11C7/18
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
173 words
A semiconductor memory device comprising: a plurality of bit lines; a plurality of word lines intersecting said bit lines, and a memory cell array having a plurality of memory cells connected to said bit lines and word lines, each said memory cell being sequentially covered with an insulating layer and a metal layer, and each said memory cell having a switching transistor and a capacitor, said switching transistor having a gate electrode comprising a respective one of said word lines spaced apart from a channel formed between active regions of a second conductivity type formed in a semiconductor substrate of a first conductivity type by means of a gate insulating layer formed on said channel, said capacitor comprising a storage electrode contacted with a respective one of said active regions, said storage electrode of an outermost memory cell in said memory cell array sloping toward a periphery of said memory cell array to form a predetermined inclination angle with respect to said semiconductor substrate, said metal layer extending over said outermost memory cell.
Claim 2
Dependent Claim
173 words
A semiconductor memory device comprising: a plurality of bit lines; a plurality of word lines intersecting said bit lines, and a memory cell array having a plurality of memory cells connected to said bit lines and word lines, each said memory cell being sequentially covered with an insulating layer and a metal layer, and each said memory cell having a switching transistor and a capacitor, said switching transistor having a gate electrode comprising a respective one of said word lines spaced apart from a channel formed between active regions of a second conductivity type formed in a semiconductor substrate of a first conductivity type by means of a gate insulating layer formed on said channel, said capacitor comprising a storage electrode contacted with a respective one of said active regions, said storage electrode of an outermost memory cell in said memory cell array sloping toward a periphery of said memory cell array to form a predetermined inclination angle with respect to said semiconductor substrate, said metal layer extending over said outermost memory cell.
Claim 3
Dependent Claim
35 words
A semiconductor memory device as claimed in claim 1, wherein a length of said sloped storage electrode is longer than that of said storage electrode of an inner memory cell in said memory cell array.
Claim 4
Dependent Claim
168 words
A semiconductor memory device comprising: a plurality of bit lines; a plurality of word lines intersecting said bit lines, and a memory cell array having a plurality of memory cells connected to said bit lines and word lines, each said memory cell being sequentially covered with an insulating layer and a metal layer, and each said memory cell having a switching transistor and a capacitor, said switching transistor having a gate electrode comprising a respective one of said word lines spaced apart from a channel formed between active regions of a second conductivity type formed in a semiconductor substrate of a first conductivity type by means of a gate insulating layer formed on said channel, said capacitor comprising a storage electrode contacted with a respective one of said active regions, a height of said storage electrode of an outermost memory cell being lower than that of said storage electrode of an inner memory cell in said memory cell array, said metal layer extending over said outermost memory cell.
Claim 5
Dependent Claim
168 words
A semiconductor memory device comprising: a plurality of bit lines; a plurality of word lines intersecting said bit lines, and a memory cell array having a plurality of memory cells connected to said bit lines and word lines, each said memory cell being sequentially covered with an insulating layer and a metal layer, and each said memory cell having a switching transistor and a capacitor, said switching transistor having a gate electrode comprising a respective one of said word lines spaced apart from a channel formed between active regions of a second conductivity type formed in a semiconductor substrate of a first conductivity type by means of a gate insulating layer formed on said channel, said capacitor comprising a storage electrode contacted with a respective one of said active regions, a height of said storage electrode of an outermost memory cell being lower than that of said storage electrode of an inner memory cell in said memory cell array, said metal layer extending over said outermost memory cell.
Claim 6
Dependent Claim
44 words
A semiconductor memory device as claimed in claim 3, wherein a width of said active region contacted with said storage electrode of said outermost memory cell is wider than that of said active region contacted with said storage electrode of said inner memory cell.
Claim 7
Dependent Claim
38 words
A semiconductor memory device as claimed in claim 4, wherein a spacing between two peripheral bit lines including the outermost bit line is wider than that between bit lines in an inner portion of said memory cell array.
Claim 8
Dependent Claim
239 words
A semiconductor memory device comprising: a plurality of bit lines; a plurality of word lines intersecting said bit lines, and a memory cell array having a plurality of memory cells connected to said bit lines and word lines, each said memory cell being sequentially covered with an insulating layer and a metal layer, and each said memory cell having a switching transistor and a capacitor, said switching transistor having a gate electrode comprising a respective one of said word lines spaced apart from a channel formed between active regions of a second conductivity type formed in a semiconductor substrate of a first conductivity type by means of a gate insulating layer formed on said channel, said capacitor comprising a storage electrode contacted with a respective one of said active regions, said storage electrode of an outermost memory cell in said memory cell array sloping toward a periphery of said memory cell array to form a predetermined inclination angle with respect to said semiconductor substrate, a length of said storage electrode of said outermost memory cell being longer than that of said storage electrode of an inner memory cell in said memory cell array, an outermost bit line in said periphery of said memory cell array being formed in the side of said storage electrode of said outermost memory cell and extending toward an inner portion of said memory cell array, said metal layer extending over said outermost memory cell.
Claim 9
Dependent Claim
239 words
A semiconductor memory device comprising: a plurality of bit lines; a plurality of word lines intersecting said bit lines, and a memory cell array having a plurality of memory cells connected to said bit lines and word lines, each said memory cell being sequentially covered with an insulating layer and a metal layer, and each said memory cell having a switching transistor and a capacitor, said switching transistor having a gate electrode comprising a respective one of said word lines spaced apart from a channel formed between active regions of a second conductivity type formed in a semiconductor substrate of a first conductivity type by means of a gate insulating layer formed on said channel, said capacitor comprising a storage electrode contacted with a respective one of said active regions, said storage electrode of an outermost memory cell in said memory cell array sloping toward a periphery of said memory cell array to form a predetermined inclination angle with respect to said semiconductor substrate, a length of said storage electrode of said outermost memory cell being longer than that of said storage electrode of an inner memory cell in said memory cell array, an outermost bit line in said periphery of said memory cell array being formed in the side of said storage electrode of said outermost memory cell and extending toward an inner portion of said memory cell array, said metal layer extending over said outermost memory cell.
References Cited (Backward Citations)
US5136533A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-20 | 1998-08-22 | 1999-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-20 | 2002-08-22 | 2003-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-20 | 2006-08-22 | 2007-02-21 | $7700.00 | Window Closed / Lapsed |