US5390626A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for formation of silicon carbide film
Assignee: Hoya Corp
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Filing: 1993-03-26
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Granted: 1995-02-21
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Expires: 2013-03-26
Abstract
Abstract In a process for the formation of SiC films by a low pressure CVD method using a hot-wall type, a dichlorosilane gas and an acetylene gas are used as a source gas, the flow velocity of the source gases in a reactor is set at not less than 70 cm/second, and the temperature for heating the reactor is set at not more than 1,000° C., whereby SiC films having excellent uniformity in the film thickness and film properties on the surface of one substrate and among different substrates can be produced at a high mass productivity without causing any damage to the reactor from heat during the film formation.
Inventors
- 👤 Hiroyuki Nagasawa
- 👤 Minoru Sugawara
- 👤 Kazuhide Yamashiro
- 👤 Masato Kobayashi
- 👤 Yohichi Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 07:50
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/36
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
112 words
A process for the formation of a silicon carbide film which comprises placing at least one substrate in a reactor of a CVD system using a hot-wall, and introducing a plurality of source gases into the reactor under reduced pressure while the reactor is heated, thereby to form a silicon carbide film in which the composition ratio of Si to C is about 1 on the substrate in the reactor, wherein the source gases comprise at least a dichlorosilane gas and an acetylene gas, the flow velocity of the source gases in the reactor is at least 70 cm/second, and the temperature for heating the reactor is not more than 1,000° C.
Claim 2
Dependent Claim
112 words
A process for the formation of a silicon carbide film which comprises placing at least one substrate in a reactor of a CVD system using a hot-wall, and introducing a plurality of source gases into the reactor under reduced pressure while the reactor is heated, thereby to form a silicon carbide film in which the composition ratio of Si to C is about 1 on the substrate in the reactor, wherein the source gases comprise at least a dichlorosilane gas and an acetylene gas, the flow velocity of the source gases in the reactor is at least 70 cm/second, and the temperature for heating the reactor is not more than 1,000° C.
Claim 3
Dependent Claim
20 words
A process according to claim 1, wherein the reactor is adjusted to a pressure between 0.01 Torr and 5 Torr.
Claim 4
Dependent Claim
22 words
A process according to claim 1, wherein the substrate is selected from the group consisting of a silicon wafer, glass and SiC.
Claim 5
Dependent Claim
20 words
A process according to claim 1, wherein a carrier gas is introduced into the reactor together with the source gases.
Claim 6
Dependent Claim
14 words
A process according to claim 4, wherein the carrier gas is a hydrogen gas.
Claim 7
Dependent Claim
18 words
A process according to claim 1, wherein the temperature for heating is between 800° C. and 1,000° C.
Claim 8
Dependent Claim
26 words
A process according to claim 1, wherein the flow velocity of the source gases in the reactor is adjusted by changing a pressure in the reactor.
Claim 9
Dependent Claim
34 words
A process according to claim 1, wherein the flow velocity of the source gases in the reactor is adjusted by controlling an amount of a carrier gas to be introduced per a unit time.
Claim 10
Dependent Claim
34 words
A process according to claim 1, wherein the flow velocity of the source gases in the reactor is adjusted by controlling an amount of the source gases to be introduced per a unit time.
Claim 11
Dependent Claim
17 words
An X-ray transmissive film containing a silicon carbide film obtained by the process recited in claim 1.
References Cited (Backward Citations)
US3865647A
Cited
US4623425A
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JPS61199627A
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US4897149A
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US5001380A
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US5011549A
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JPH02157196A
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US5005075A
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JPH02262324A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-20 | 1998-08-22 | 1999-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-20 | 2002-08-22 | 2003-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-20 | 2006-08-22 | 2007-02-21 | $7700.00 | Window Closed / Lapsed |