Patent US5389810A successfully refreshed from Google Patents.
US5389810A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having at least one symmetrical pair of MOSFETs
Assignee: Panasonic Holdings Corp
•
Filing: 1993-03-23
•
Granted: 1995-02-14
•
Expires: 2013-03-23
Abstract
Abstract A semiconductor device having at least one symmetrical pair of MOSFETs is provided. The device includes a semiconductor layer having an upper surface, an active region formed in the upper surface, an isolation region formed in the upper surface and enclosing the active region, and a pair of MOSFETs formed in the active region, wherein the pair of MOSFETs are symmetrical with respect to a first symmetric plane substantially vertical to the upper surface and also with respect to a second symmetric plane vertical both to the upper surface and to the first symmetric plane, each of the pair of MOSFETs includes a source region, a drain region, and a channel region formed in an upper surface of the active region, the source region is shared by the pair of MOSFETs, and the drain region is spatially isolated from the source region by the channel region.
Inventors
- 👤 Masashi Agata
- 👤 Hiroyuki Yamauchi
- 👤 Toshio Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:16
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; G; G11; G11C; G11C7/00; G11C7/06; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D62/00; H10D62/10; H10D62/124; H10D62/126; H10D62/127; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/519; H10D84/83125; H10D89/00; H10D89/10
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
187 words
A semiconductor device comprising: a semiconductor layer having an upper surface; an active region formed in said upper surface; an isolation region formed in said upper surface and enclosing said active region; and a pair of MOSFETs formed in said active region; wherein said pair of MOSFETs include a pair of gate electrodes; each of said pair of electrodes is symmetrical with respect to a first symmetric plane substantially normal to said upper surface, and one of said pair of electrodes is symmetrical with the other of said pair of electrodes with respect to a second symmetric plane normal both to said upper surface and to said first symmetric plane; each of said pair of electrodes includes a first portion and a second portion each having a length extending in a direction parallel to said first symmetric plane, a third portion electrically connecting respective ends of said first portion and said second portion, and a fourth portion electrically connecting respective other ends of said first portion and said second portion; and said fourth portion is extended across the boundary of said active region and said isolation region.
Claim 2
Dependent Claim
187 words
A semiconductor device comprising: a semiconductor layer having an upper surface; an active region formed in said upper surface; an isolation region formed in said upper surface and enclosing said active region; and a pair of MOSFETs formed in said active region; wherein said pair of MOSFETs include a pair of gate electrodes; each of said pair of electrodes is symmetrical with respect to a first symmetric plane substantially normal to said upper surface, and one of said pair of electrodes is symmetrical with the other of said pair of electrodes with respect to a second symmetric plane normal both to said upper surface and to said first symmetric plane; each of said pair of electrodes includes a first portion and a second portion each having a length extending in a direction parallel to said first symmetric plane, a third portion electrically connecting respective ends of said first portion and said second portion, and a fourth portion electrically connecting respective other ends of said first portion and said second portion; and said fourth portion is extended across the boundary of said active region and said isolation region.
Claim 3
Dependent Claim
26 words
A semiconductor device according to claim 1, wherein the widths of said first portion and said second portion are smaller than that of said third portion.
Claim 4
Dependent Claim
193 words
A semiconductor device comprising: a semiconductor layer having an upper surface; an active region formed in said upper surface; an isolation region formed in said upper surface and enclosing said active region; and a pair of MOSFETs formed in said active region, each of said pair of MOSFETs including a source region, a drain region, and a substantially U-shaped channel region formed in said active region; wherein said source region, said drain region and said channel region of each of said pair of MOSFETs are symmetrical with respect to a first symmetric plane substantially normal to said upper surface, and said source region, said drain region and said channel region of one of said pair of MOSFETs are symmetrical with said source region, said drain region and said channel region, respectively, of the other of said pair of MOSFETs with respect to a second symmetric plane normal both to said upper surface and to said first symmetric plane; said source region for each of said MOSFETs is shared by said pair of MOSFETs; and said drain region for each of said MOSFETs is spatially isolated from said source region by said channel region.
Claim 5
Dependent Claim
193 words
A semiconductor device comprising: a semiconductor layer having an upper surface; an active region formed in said upper surface; an isolation region formed in said upper surface and enclosing said active region; and a pair of MOSFETs formed in said active region, each of said pair of MOSFETs including a source region, a drain region, and a substantially U-shaped channel region formed in said active region; wherein said source region, said drain region and said channel region of each of said pair of MOSFETs are symmetrical with respect to a first symmetric plane substantially normal to said upper surface, and said source region, said drain region and said channel region of one of said pair of MOSFETs are symmetrical with said source region, said drain region and said channel region, respectively, of the other of said pair of MOSFETs with respect to a second symmetric plane normal both to said upper surface and to said first symmetric plane; said source region for each of said MOSFETs is shared by said pair of MOSFETs; and said drain region for each of said MOSFETs is spatially isolated from said source region by said channel region.
Claim 6
Dependent Claim
32 words
A semiconductor device according to claim 3, wherein each of said pair of MOSFETs comprises a gate electrode located directly above said channel region and defining the shape of said channel region.
Claim 7
Dependent Claim
23 words
A semiconductor device according to claim 4, wherein said source region and said drain region are self-aligned with respect to said gate electrode.
Claim 8
Dependent Claim
26 words
A semiconductor device according to claim 3, further comprising a plurality of pairs of MOSFETs having the same configuration as that of said pair of MOSFETs.
Claim 9
Dependent Claim
42 words
A semiconductor device according to claim 4, wherein said gate electrode includes a first portion substantially parallel to said upper surface and said first symmetric plane and a second portion electrically connected to said first portion and parallel to said first portion.
Claim 10
Dependent Claim
26 words
A semiconductor device according to claim 7, wherein said first portion and said second portion cross the boundary of said active region and said isolation region.
Claim 11
Dependent Claim
39 words
A semiconductor device according to claim 8, wherein said gate electrode includes a third portion electrically connecting each end of said first portion and said second portion, and said third portion is substantially parallel to said second symmetric plane.
Claim 12
Dependent Claim
26 words
A semiconductor device according to claim 9, wherein the widths of said first portion and said second portion are smaller than that of said third portion.
Claim 13
Dependent Claim
35 words
A semiconductor device according to claim 9, wherein said gate electrode includes a fourth portion electrically connecting said first portion and said second portion, and said fourth portion is substantially parallel with said third portion.
Claim 14
Dependent Claim
22 words
A semiconductor device according to claim 11, wherein said fourth portion crosses the boundary of said active region and said isolation region.
Claim 15
Dependent Claim
15 words
A semiconductor device according to claim 4, wherein said gate electrode includes a ring-shaped portion.
Claim 16
Dependent Claim
34 words
A semiconductor device according to claim 13, wherein said ring-shaped portion of said gate electrode is located in said active region without extending across the boundary of said active region and said isolation region.
Claim 17
Dependent Claim
27 words
A semiconductor device according to claim 13, wherein said ring-shaped portion of said gate electrode extends across the boundary of said active region and said isolation region.
Claim 18
Dependent Claim
36 words
A semiconductor device according to claim 3, wherein said source region includes a plurality of contact regions at positions along a line where said upper surface of said semiconductor layer and said second symmetric plane cross.
Claim 19
Dependent Claim
193 words
A semiconductor device comprising: a semiconductor layer having an upper surface; an active region formed in said upper surface; an isolation region formed in said upper surface and enclosing said active region; and a pair of MOSFETs formed in said active region, each of said pair of MOSFETs including a source region, a drain region, and a substantially O-shaped channel region formed in said active region; wherein said source region, said drain region and said channel region of each of said pair of MOSFETs are symmetrical with respect to a first symmetric plane substantially normal to said upper surface, and said source region, said drain region and said channel region of one of said pair of MOSFETs are symmetrical with said source region, said drain region and said channel region, respectively, of the other of said pair of MOSFETs with respect to a second symmetric plane normal both to said upper surface and to said first symmetric plane; said source region for each of said MOSFETs is shared by said pair of MOSFETs; and said drain region for each of said MOSFETs is spatially isolated from said source region by said channel region.
Claim 20
Dependent Claim
193 words
A semiconductor device comprising: a semiconductor layer having an upper surface; an active region formed in said upper surface; an isolation region formed in said upper surface and enclosing said active region; and a pair of MOSFETs formed in said active region, each of said pair of MOSFETs including a source region, a drain region, and a substantially O-shaped channel region formed in said active region; wherein said source region, said drain region and said channel region of each of said pair of MOSFETs are symmetrical with respect to a first symmetric plane substantially normal to said upper surface, and said source region, said drain region and said channel region of one of said pair of MOSFETs are symmetrical with said source region, said drain region and said channel region, respectively, of the other of said pair of MOSFETs with respect to a second symmetric plane normal both to said upper surface and to said first symmetric plane; said source region for each of said MOSFETs is shared by said pair of MOSFETs; and said drain region for each of said MOSFETs is spatially isolated from said source region by said channel region.
Claim 21
Dependent Claim
32 words
A semiconductor device according to claim 17, wherein each of said pair of MOSFETs comprises a gate electrode located directly above said channel region and defining the shape of said channel region.
Claim 22
Dependent Claim
23 words
A semiconductor device according to claim 18, wherein said source region and said drain region are self-aligned with respect to said gate electrode.
Claim 23
Dependent Claim
26 words
A semiconductor device according to claim 17, further comprising a plurality of pairs of MOSFETs having the same configuration as that of said pair of MOSFETs.
Claim 24
Dependent Claim
42 words
A semiconductor device according to claim 18, wherein said gate electrode includes a first portion substantially parallel to said upper surface and said first symmetric plane and a second portion electrically connected to said first portion and parallel to said first portion.
Claim 25
Dependent Claim
26 words
A semiconductor device according to claim 21, wherein said first portion and said second portion cross the boundary of said active region and said isolation region.
Claim 26
Dependent Claim
39 words
A semiconductor device according to claim 22, wherein said gate electrode includes a third portion electrically connecting each end of said first portion and said second portion, and said third portion is substantially parallel to said second symmetric plane.
Claim 27
Dependent Claim
26 words
A semiconductor device according to claim 23, wherein the widths of said first portion and said second portion are smaller than that of said third portion.
Claim 28
Dependent Claim
35 words
A semiconductor device according to claim 23, wherein said gate electrode includes a fourth portion electrically connecting said first portion and said second portion, and said fourth portion is substantially parallel with said third portion.
Claim 29
Dependent Claim
22 words
A semiconductor device according to claim 25, wherein said fourth portion crosses the boundary of said active region and said isolation region.
Claim 30
Dependent Claim
15 words
A semiconductor device according to claim 18, wherein said gate electrode includes a ring-shaped portion.
Claim 31
Dependent Claim
34 words
A semiconductor device according to claim 27, wherein said ring-shaped portion of said gate electrode is located in said active region without extending across the boundary of said active region and said isolation region.
Claim 32
Dependent Claim
27 words
A semiconductor device according to claim 27, wherein said ring-shaped portion of said gate electrode extends across the boundary of said active region and said isolation region.
Claim 33
Dependent Claim
36 words
A semiconductor device according to claim 17, wherein said source region includes a plurality of contact regions at positions along a line where said upper surface of said semiconductor layer and said second symmetric plane cross.
References Cited (Backward Citations)
JPS58207677A
Cited
JPS61290767A
Cited
EP0222396A1
Cited
JPS62115861A
Cited
JPH02159054A
Cited
JPH0336301A
Cited
EP0445725A1
Cited
JPH0513713A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-13 | 1998-08-15 | 1999-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-13 | 2002-08-15 | 2003-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-13 | 2006-08-15 | 2007-02-14 | $7700.00 | Window Closed / Lapsed |