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US5386382A
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Semiconductor memory device and a manufacturing method thereof
Assignee: Samsung Electronics Co Ltd
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Filing: 1993-09-30
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Granted: 1995-01-31
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Expires: 2013-09-30
Abstract
Abstract A semiconductor memory device includes a cell array region and a peripheral circuit region, wherein a channel is formed to surround the cell array region, on a border region between the cell array region and peripheral circuit region. Also, a method for the semiconductor memory device is provided. Therefore, the conventional problem of degraded reliability of the conductive layer due to the step between the cell array region and peripheral circuit region, can be prevented. At the same time, the surface planarization of the peripheral circuit region can be attained.
Inventors
- 👤 Ji-hong Ahn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:34
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10W; H10W20/00; H10W20/01; H10W20/40
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
41 words
A semiconductor memory device comprising: a cell array region; a peripheral circuit region; and a border region between said cell array region and said peripheral circuit region, wherein a channel surrounding said cell array region is formed on said border region.
Claim 2
Dependent Claim
41 words
A semiconductor memory device comprising: a cell array region; a peripheral circuit region; and a border region between said cell array region and said peripheral circuit region, wherein a channel surrounding said cell array region is formed on said border region.
Claim 3
Dependent Claim
33 words
A semiconductor memory device as claimed in claim 1, wherein a memory cell formed in said cell array region is a dynamic random access memory cell consisting of one capacitor and one transistor.
Claim 4
Dependent Claim
19 words
A semiconductor memory device as claimed in claim 2, wherein said capacitor is formed of a cylindrical storage electrode.
Claim 5
Dependent Claim
30 words
A semiconductor memory device as claimed in claim 3, wherein the height of said channel is the same as that of said storage electrode formed on said cell array region.
Claim 6
Dependent Claim
25 words
A semiconductor memory device as claimed in claim 3, wherein the thickness of said channel is the same as that of said cylindrical storage electrode.
Claim 7
Dependent Claim
18 words
A semiconductor memory device as claimed in claim 1, wherein more than one of said channel is formed.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-30 | 1998-08-01 | 1999-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-30 | 2002-08-01 | 2003-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-30 | 2006-08-01 | 2007-01-31 | $7700.00 | Window Closed / Lapsed |