Voltage-tunable, multicolor infrared detectors

Claim 2

A semiconductor superlattice structure comprising: a plurality of doped semiconductor layers forming quantum well units, each said unit having at least two doped quantum wells therein, each said doped quantum well having a lower energy level, a higher energy level, and a Fermi level, wherein, at a zero bias, the Fermi levels of each of said doped quantum wells are substantially equal; wherein, at a predetermined bias, the Fermi levels of said doped quantum well units are different; and wherein the lower energy levels of each quantum well are different from one another; a set of first semiconductor layers forming quantum potential barriers each located between adjacent ones of said quantum well units, said first potential barriers substantially impeding the tunneling therethrough of electrons at said lower energy levels; and a set of second semiconductor layers forming quantum potential barriers each located between adjacent ones of said doped quantum wells in each of said quantum well units, said second potential barriers permitting electrons at said lower levels to tunnel therethrough and preventing energy-level coupling between adjacent ones of said doped quantum wells.

Claim 3

The structure of claim 1 wherein for each said unit the widths of said doped quantum wells are different from well to well and doped semiconductor layers have the same doping density.

Claim 4

The structure of claim 1 wherein the well widths are the same from unit to unit and the doped semiconductor layers have different bandgaps.

Claim 5

The structure of claim 1 wherein said first barriers have a common width and said second barriers have a common width and said first barriers are wider than said second barriers.

Claim 6

The structure of claim 4 wherein said barriers are made from a common material and said wells are made from a common material.

Claim 7

The structure of claim 5 wherein said units each have three doped quantum wells that are linearly spaced and have widths that increase from well to well.

Claim 8

A tunable radiation detector comprising: a semiconductor superlattice structure having a plurality of doped semiconductor layers forming quantum well units, each said unit having at least two doped quantum wells therein, each said doped quantum well having a lower energy level, a higher energy level, and a Fermi level, wherein, at a zero bias, the Fermi levels of each of said doped quantum wells are substantially equal; wherein, at a predetermined bias, the Fermi levels of said doped quantum well units are different; and wherein the lower energy levels of each quantum well are different from one another; a set of first semiconductor layers forming quantum potential barriers each located between adjacent ones of said quantum well units, said first potential barriers substantially impeding the tunneling therethrough of electrons at said lower energy levels; and a set of second semiconductor layers forming quantum potential barriers each located between adjacent ones of said doped quantum wells in each of said quantum well units, said second potential barriers permitting electrons at said lower levels to tunnel therethrough and preventing energy-level coupling between adjacent ones of said doped quantum wells; biasing circuit connected across said semiconductor superlattice structure; and photocurrent sensing means for measuring the amount of radiation absorbed by said semiconductor superlattice structure.

Claim 9

A tunable radiation detector comprising: a semiconductor superlattice structure having a plurality of doped semiconductor layers forming quantum well units, each said unit having at least two doped quantum wells therein, each said doped quantum well having a lower energy level, a higher energy level, and a Fermi level, wherein, at a zero bias, the Fermi levels of each of said doped quantum wells are substantially equal; wherein, at a predetermined bias, the Fermi levels of said doped quantum well units are different; and wherein the lower energy levels of each quantum well are different from one another; a set of first semiconductor layers forming quantum potential barriers each located between adjacent ones of said quantum well units, said first potential barriers substantially impeding the tunneling therethrough of electrons at said lower energy levels; and a set of second semiconductor layers forming quantum potential barriers each located between adjacent ones of said doped quantum wells in each of said quantum well units, said second potential barriers permitting electrons at said lower levels to tunnel therethrough and preventing energy-level coupling between adjacent ones of said doped quantum wells; biasing circuit connected across said semiconductor superlattice structure; and photocurrent sensing means for measuring the amount of radiation absorbed by said semiconductor superlattice structure.

Claim 10

The structure of claim 7 wherein for each said unit the widths of said doped quantum wells are different from well to well and the doped semiconductors layers have the same doping density.

Claim 11

The structure of claim 7 wherein the well widths are the same from unit to unit and the doped semiconductor layers have different bandgaps.

Claim 12

The structure of claim 7 wherein said first barriers have a common width and said second barriers have a common width and said first barriers are wider than said second barriers.

Claim 13

The structure of claim 7 wherein said biasing circuit includes means for selectively permitting only a narrow band of radiation over a predetermined spectrum to be absorbed by said superlattice structure and causing photocurrent produced by the absorption to be sensed by said photocurrent sensing means, whereby said detector is tuneable for multicolor operation.

Claim 14

The structure of claim 11 wherein said biasing circuit includes an amplifier means for amplifying said photocurrent.

Claim 15

The structure of claim 12 wherein said amplifier means includes a transistor having base, collector and emitter contacts, and wherein said superlattice structure is mounted between said base and emitter contacts.

Claim 16

The structure of claim 13 wherein said biasing circuit is connected between said emitter and base contacts, said photocurrent sensing means is connected between said biasing circuit and said collector contact, and said amplifier means further includes a barrier means located between said collector to and base contacts for passing photocurrent and blocking dark currents.

Claim 17

The structure of claim 14 wherein said superlattice structure absorbs radiation substantially in the infrared spectrum.