US5031013A
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Infrared hot-electron transistor
Assignee: United States Department of the Army
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Filing: 1990-08-13
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Granted: 1991-07-09
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Expires: 2010-08-13
Abstract
Abstract An infrared hot-electron transistor comprising a doped multiple quantum well structure as an infrared radiation sensitive unit, and an electron energy filter as a dark current reduction unit. Infrared radiation incident on the device gives rise to intersubband absorption. After having absorbed an infrared photon, each photoelectron is one photon energy higher in energy than that of the dark electron, and hence can be separated by an electron energy filter. The transistor consists of three terminals, each of them has an indispensable function. The emitter supplies electrons, the collector collects photoelectrons, and the base provides drainage to the unwanted dark electrons.
Inventors
- 👤 Kwong-Kit Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:43
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H10F30/245; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10F77/147; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S977/00; Y10S977/70; Y10S977/755; Y10S977/759; Y10S977/902; Y10S977/932; Y10S977/936
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
117 words
An infrared-radiation detection device comprising a plurality of layers each of which is proximate and electrically coupled to the subsequent described layer and wherein all doped layers are similarly doped, that is, either all n or all p and more specifically comprising: a doped conducting layer functioning as an emitter contact layer; a doped multiple quantum well structure layer functioning as a light sensing means; a doped conducting layer functioning as a base contact; an undoped single thick quantum barrier functioning as an electron energy high pass filter which allows electrons in defined energy ranges to proceed to the next layer and blocks electrons outside the defined energy ranges; and a doped layer functioning as a collector.
Claim 2
Dependent Claim
117 words
An infrared-radiation detection device comprising a plurality of layers each of which is proximate and electrically coupled to the subsequent described layer and wherein all doped layers are similarly doped, that is, either all n or all p and more specifically comprising: a doped conducting layer functioning as an emitter contact layer; a doped multiple quantum well structure layer functioning as a light sensing means; a doped conducting layer functioning as a base contact; an undoped single thick quantum barrier functioning as an electron energy high pass filter which allows electrons in defined energy ranges to proceed to the next layer and blocks electrons outside the defined energy ranges; and a doped layer functioning as a collector.
Claim 3
Dependent Claim
117 words
An infrared-radiation detection device comprising a plurality of layers each of which is proximate and electrically coupled to the subsequent described layer and wherein all doped layers are similarly doped, that is, either all n or all p and more specifically comprising: a doped conducting layer functioning as an emitter contact layer; a doped multiple quantum well structure layer functioning as a light sensing means; a doped conducting layer functioning as a base contact; an undoped strongly coupled superlattice structure functioning as an electron energy band pass filter which allows electrons in defined energy ranges to proceed to the next layer and blocks electrons outside the defined energy ranges; and a doped layer functioning as a collector.
Claim 4
Dependent Claim
117 words
An infrared-radiation detection device comprising a plurality of layers each of which is proximate and electrically coupled to the subsequent described layer and wherein all doped layers are similarly doped, that is, either all n or all p and more specifically comprising: a doped conducting layer functioning as an emitter contact layer; a doped multiple quantum well structure layer functioning as a light sensing means; a doped conducting layer functioning as a base contact; an undoped strongly coupled superlattice structure functioning as an electron energy band pass filter which allows electrons in defined energy ranges to proceed to the next layer and blocks electrons outside the defined energy ranges; and a doped layer functioning as a collector.
Claim 5
Dependent Claim
127 words
An infrared-radiation detection device grown on a semi-insulating substrate comprising a multiple quantum well structure functioning as the light sensing means which consists of 50 periods of 150 Å Ga.sub. 0.68 Al.sub. 0.32 As undoped barrier and 74 Å GaAs well doped with n + = 2×10.sup. 18 cm.sup. -3 sandwiched between a heavily doped (n + = 2×10.sup. 18 cm.sup. -3, 3000 Å) GaAs layer functioning as the emitter contact and a lightly doped (n= 3×10.sup. 17 cm.sup. -3, 1500 Å) GaAs layer functioning as the base contact, followed by a GA.sub. 0.65 Al.sub. 0.35 As undoped barrier (1000 Å) functioning as the energy filter, and followed by a heavily doped (n + = 2×10.sup. 18 cm.sup. -3, 6000 Å) GaAs layer functioning as the collector.
Claim 6
Dependent Claim
127 words
An infrared-radiation detection device grown on a semi-insulating substrate comprising a multiple quantum well structure functioning as the light sensing means which consists of 50 periods of 150 Å Ga.sub. 0.68 Al.sub. 0.32 As undoped barrier and 74 Å GaAs well doped with n + = 2×10.sup. 18 cm.sup. -3 sandwiched between a heavily doped (n + = 2×10.sup. 18 cm.sup. -3, 3000 Å) GaAs layer functioning as the emitter contact and a lightly doped (n= 3×10.sup. 17 cm.sup. -3, 1500 Å) GaAs layer functioning as the base contact, followed by a GA.sub. 0.65 Al.sub. 0.35 As undoped barrier (1000 Å) functioning as the energy filter, and followed by a heavily doped (n + = 2×10.sup. 18 cm.sup. -3, 6000 Å) GaAs layer functioning as the collector.
References Cited (Backward Citations)
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