US5384287A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a semiconductor device having self-aligned contact holes
Assignee: NEC Corp
•
Filing: 1992-12-11
•
Granted: 1995-01-24
•
Expires: 2012-12-11
Abstract
Abstract At the surface of a semiconductor substrate a conductor film over a silicon comprising insulating film, and the first aluminium oxide film are formed. These films are patterned to form a plurality of lines and an aluminium oxide film mask covering the top faces of the lines. Over the whole surface, the second aluminium oxide film is formed and etched back to form aluminium oxide film spacers covering the side faces of the lines. Over the whole surface a silicon oxide comprising dielectric film is formed. Anisotropic dry etching of the dielectric film and the insulating film is performed with fluorocarbon comprising gas to form self-aligned contact holes extending down to the surface of diffused layers formed at the surface of the semiconductor substrate. The self-aligned contact holes can be formed to be self-aligned with two adjacent lines because silicon-comprising dielectric films have a high etching selectivity to anisotropic dry etching with fluorocarbon-comprising gas, compared with aluminium oxide film. Isolation between the self-aligned contact hole and the interconnect is made only by aluminium oxide film spacers, resulting in suitably minimized area of the self-aligned contact holes. Besides isolation between the lines and the interconnects filling the self-aligned contact holes, and between two interconnects each filling the neighboring self-aligned contact holes, respectively, can be well secured.
Inventors
- 👤 Tadashi Fukase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:55
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
198 words
A method of forming a semiconductor device comprising: forming a conductor film on an insulating film covering a semiconductor substrate, forming over the whole surface a silicon oxide film to be used as a mask, and then forming an aluminum oxide film as a mask; patterning said aluminum oxide film as a mask, said silicon oxide film as a mask, and said conductor film into the same geometry to form lines made of said conductor film, said silicon oxide film mask and said aluminum oxide film mask being formed on the top face of each line, forming windows in areas in said aluminum oxide film as a mask, so that said lines are formed through said windows; forming over the whole surface, and etching back, an aluminum oxide film to form aluminum oxide film spacers on the side faces of each line; forming diffused layers of a conductivity type in regions at the surface of said semiconductor substrate; forming over the whole surface a silicon oxide dielectric film; and then performing anisotropic dry etching of said dielectric film with fluorocarbon gas in order to simultaneously form self-aligned contact holes extending downwardly through said windows to said diffused layers.
Claim 2
Independent Claim
198 words
A method of forming a semiconductor device comprising: forming a conductor film on an insulating film covering a semiconductor substrate, forming over the whole surface a silicon oxide film to be used as a mask, and then forming an aluminum oxide film as a mask; patterning said aluminum oxide film as a mask, said silicon oxide film as a mask, and said conductor film into the same geometry to form lines made of said conductor film, said silicon oxide film mask and said aluminum oxide film mask being formed on the top face of each line, forming windows in areas in said aluminum oxide film as a mask, so that said lines are formed through said windows; forming over the whole surface, and etching back, an aluminum oxide film to form aluminum oxide film spacers on the side faces of each line; forming diffused layers of a conductivity type in regions at the surface of said semiconductor substrate; forming over the whole surface a silicon oxide dielectric film; and then performing anisotropic dry etching of said dielectric film with fluorocarbon gas in order to simultaneously form self-aligned contact holes extending downwardly through said windows to said diffused layers.
Claim 3
Dependent Claim
53 words
A method of forming the semiconductor device according to claim 1 wherein selectively formed field oxide films and gate oxide films are made of said silicon insulating film, said lines are gate electrodes, and said diffused layers are source/drain regions formed to be self-aligned with said gate electrode and said field oxide film.
Claim 4
Independent Claim
204 words
A method of forming a semiconductor device comprising: forming a conductor film on an insulating film covering a semiconductor substrate, forming an aluminum oxide film to serve as a pad on said silicon insulating film; patterning said aluminum oxide film to be a mask and said silicon oxide film to be a mask, and said conductor film in the same geometry, and forming said aluminum oxide film as said pad and forming lines made of said conductor film, each line being provided on the top with a mask made of said aluminum oxide film; said silicon oxide film mask and said aluminum oxide film mask being formed on the top faces of said lines, and said aluminum oxide film pad being formed on the side faces of said lines; forming over the whole surface, and etching back, an aluminum oxide film to form aluminum oxide film spacers on the side faces of each line; forming diffused layers of a conductivity type in regions at the surface of said semiconductor substrate; and forming over the whole surface a silicon oxide dielectric film and then performing anisotropic dry etching said dielectric film with fluorocarbon-related gas to form self-aligned contact holes extending down to said diffused layers.
Claim 5
Independent Claim
204 words
A method of forming a semiconductor device comprising: forming a conductor film on an insulating film covering a semiconductor substrate, forming an aluminum oxide film to serve as a pad on said silicon insulating film; patterning said aluminum oxide film to be a mask and said silicon oxide film to be a mask, and said conductor film in the same geometry, and forming said aluminum oxide film as said pad and forming lines made of said conductor film, each line being provided on the top with a mask made of said aluminum oxide film; said silicon oxide film mask and said aluminum oxide film mask being formed on the top faces of said lines, and said aluminum oxide film pad being formed on the side faces of said lines; forming over the whole surface, and etching back, an aluminum oxide film to form aluminum oxide film spacers on the side faces of each line; forming diffused layers of a conductivity type in regions at the surface of said semiconductor substrate; and forming over the whole surface a silicon oxide dielectric film and then performing anisotropic dry etching said dielectric film with fluorocarbon-related gas to form self-aligned contact holes extending down to said diffused layers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-23 | 1998-07-25 | 1999-01-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-23 | 2002-07-25 | 2003-01-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-23 | 2006-07-25 | 2007-01-24 | $7700.00 | Window Closed / Lapsed |