Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
180 words
A phase shift photomask at least comprising a substrate and a phase shifter pattern comprising a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer interposed therebetween, characterized in that the substrate is provided on the surface with a light transmissive etching stopper layer that comprises CrO x , CrN y , CrC z , CrO x N y , CrO x C z or CrO x N y C z wherein for CrO x , x is 0.01 to 3 inclusive, for CrN y , y is 0.01 to 2 inclusive, for CrC z , z is 0.01 to 1.5 inclusive, for CrO x N y , x is 0.01 to 3 inclusive and y is 0.01 to 2 inclusive, for CrO x C z , x is 0.01 to 2 inclusive and z is 0.01 to 1.5 inclusive, and for CrO x N y C z , x is 0.01 to 3 inclusive, y is 0.01 to 2 inclusive and z is 0.01 to 1.5 inclusive.
Claim 2
Dependent Claim
180 words
A phase shift photomask at least comprising a substrate and a phase shifter pattern comprising a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer interposed therebetween, characterized in that the substrate is provided on the surface with a light transmissive etching stopper layer that comprises CrO x , CrN y , CrC z , CrO x N y , CrO x C z or CrO x N y C z wherein for CrO x , x is 0.01 to 3 inclusive, for CrN y , y is 0.01 to 2 inclusive, for CrC z , z is 0.01 to 1.5 inclusive, for CrO x N y , x is 0.01 to 3 inclusive and y is 0.01 to 2 inclusive, for CrO x C z , x is 0.01 to 2 inclusive and z is 0.01 to 1.5 inclusive, and for CrO x N y C z , x is 0.01 to 3 inclusive, y is 0.01 to 2 inclusive and z is 0.01 to 1.5 inclusive.
Claim 3
Dependent Claim
48 words
A phase shift photomask as claimed in claim 1, characterized in that the phase shifter pattern is provided on the surface of the substrate through the opaque layer and a protective layer as a silicon oxide layer is interposed between the etching stopper layer and the opaque layer.
Claim 4
Dependent Claim
101 words
A phase shift photomask at least comprising a substrate and a phase shifter pattern comprising a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer interposed therebetween, characterized in that the substrate is provided on the surface with a film that comprises MgF 2-2x O y , CaF 2-2x O y , LiF 2-2x O y , BaF 2-2x O y , La 2 F 6-2x O y or Ce 2 F 6-2x O y wherein x is between 0.01 and 0.5 and y is not greater than x.
Claim 5
Dependent Claim
101 words
A phase shift photomask at least comprising a substrate and a phase shifter pattern comprising a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer interposed therebetween, characterized in that the substrate is provided on the surface with a film that comprises MgF 2-2x O y , CaF 2-2x O y , LiF 2-2x O y , BaF 2-2x O y , La 2 F 6-2x O y or Ce 2 F 6-2x O y wherein x is between 0.01 and 0.5 and y is not greater than x.
Claim 6
Dependent Claim
95 words
A phase shift photomask at least comprising a substrate and a phase shifter pattern comprising a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer interposed therebetween, characterized in that the substrate is provided on the surface with a light transmissive film that comprises a mixture of Al 2 O 3 with MgO, ZrO 2 , Ta 2 O 5 , or Hf0 wherein said additional metal oxide is contained in the aluminum oxide in an amount of 0.1 to 10 mol. %.
Claim 7
Dependent Claim
95 words
A phase shift photomask at least comprising a substrate and a phase shifter pattern comprising a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer interposed therebetween, characterized in that the substrate is provided on the surface with a light transmissive film that comprises a mixture of Al 2 O 3 with MgO, ZrO 2 , Ta 2 O 5 , or Hf0 wherein said additional metal oxide is contained in the aluminum oxide in an amount of 0.1 to 10 mol. %.
Claim 8
Dependent Claim
20 words
A phase shift photomask according to claim 4, wherein said film is of a thickness of 10 to 500 nm.