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US5380548A
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Method for fabricating a magnetoresistive sensor having antiferromagnetic layer
Assignee: HGST Netherlands BV
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Filing: 1994-03-15
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Granted: 1995-01-10
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Expires: 2014-03-15
Abstract
Abstract A magnetoresistive (MR) sensor comprising a sputtered layer of ferromagnetic material and a sputtered layer of antiferromagnetic nickel-manganese (Ni-Mn) to provide an exchange coupled longitudinal bias field in the MR element is described. The antiferromagnetic layer overlays the MR layer and may be patterned to provide the longitudinal bias field only in the end regions of the MR layer. Alternatively, the antiferromagnetic layer can underlay the MR layer with a Zr underlayer to enhance the exchange-coupled field. As initially deposited, the Ni-Mn layer is face-centered-cubic and exhibits little or no exchange-coupled field. After one annealing cycle at a relatively low temperature, the Ni-Mn layer is face-centered-tetragonal and exhibits increased crystallographic ordering and provides sufficient exchange coupling for the MR element to operate. Addition of chromium to the Ni-Mn alloy provides increased corrosion resistance.
Inventors
- 👤 Tsann Lin
- 👤 James K. Howard
- 👤 Cherngye Hwang
- 👤 Daniele Mauri
- 👤 Norbert Staud
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 02:02
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; G11B5/3906; G11B5/3929; G11B5/3932
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
110 words
A method for fabricating a magnetoresistive sensor having a layer of antiferromagnetic material in direct contact with a layer of magnetoresistive ferromagnetic material for inducing a longitudinal bias field in the ferromagnetic layer, said method comprising the steps of: depositing a layer of magnetoresistive ferromagnetic material on a substrate; depositing a layer of antiferromagnetic material on said substrate in direct contact with said magnetoresistive layer, said antiferromagnetic material being an alloy of manganese (Mn); and annealing said deposited magnetoresistive and antiferromagnetic layers for ordering the crystallographic structure of said antiferromagnetic layer to provide a Mn alloy having a face-centered-tetragonal (fct) structure in at least a portion of said antiferromagnetic layer.
Claim 2
Independent Claim
110 words
A method for fabricating a magnetoresistive sensor having a layer of antiferromagnetic material in direct contact with a layer of magnetoresistive ferromagnetic material for inducing a longitudinal bias field in the ferromagnetic layer, said method comprising the steps of: depositing a layer of magnetoresistive ferromagnetic material on a substrate; depositing a layer of antiferromagnetic material on said substrate in direct contact with said magnetoresistive layer, said antiferromagnetic material being an alloy of manganese (Mn); and annealing said deposited magnetoresistive and antiferromagnetic layers for ordering the crystallographic structure of said antiferromagnetic layer to provide a Mn alloy having a face-centered-tetragonal (fct) structure in at least a portion of said antiferromagnetic layer.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said deposited magnetoresistive and antiferromagnetic layers are annealed at a temperature less than about 260 degrees C.
Claim 4
Dependent Claim
19 words
The method as in claim 1 wherein said Mn alloy comprises a nickel-manganese (Ni-Mn) alloy having a predetermined composition.
Claim 5
Dependent Claim
25 words
The method as in claim 3 wherein said Ni-Mn alloy comprises a composition within a range of about 46 to about 60 atomic percent Mn.
Claim 6
Dependent Claim
18 words
The method as in claim 1 wherein said magnetoresistive ferromagnetic layer is an alloy comprising nickel and iron.
Claim 7
Dependent Claim
22 words
The method as in claim 1 wherein said Mn alloy comprises a ternary alloy of nickel, manganese and a selected corrosion-resistant material.
Claim 8
Dependent Claim
25 words
The method as in claim 6 wherein said selected corrosion-resistant material is selected from the group consisting of iridium, platinum, rhodium, ruthenium, titanium and zirconium.
Claim 9
Dependent Claim
14 words
The method as in claim 6 wherein said selected corrosion-resistant material is chromium (Cr).
Claim 10
Dependent Claim
22 words
The method as in claim 8 wherein said ternary alloy comprises Cr in the range of from 0 to 11 atomic percent.
Claim 11
Dependent Claim
22 words
The method as in claim 1 wherein at least a portion of said antiferromagnetic layer comprises Mn being in a theta phase.
Claim 12
Dependent Claim
31 words
The method as in claim 1 wherein said Mn alloy is selected from the group consisting of nickel (Ni), iridium (Ir), palladium (Pd), platinum (Pt) and rhodium (Rh) alloys of Mn.
Claim 13
Dependent Claim
50 words
The method as in claim 11 wherein said Mn alloy is selected from the group consisting of Ni-Mn, Ir-Mn, Pd-Mn, Pt-Mn and Rh-Mn having a composition within the range of 46 to 60, 45 to 63, 36 to 52, 33 to 60 and 50 to 65, respectively, atomic percent Mn.
References Cited (Backward Citations)
No citation records indexed.
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