Patent US5376405A successfully refreshed from Google Patents.
US5376405A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers
Assignee: Micron Technology Inc
•
Filing: 1993-04-15
•
Granted: 1994-12-27
•
Expires: 2013-04-15
Abstract
Abstract Disclosed is a chemical vapor deposition (CVD) method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor. Such includes, a) positioning a wafer within the CVD reactor; b) injecting selected quantities of a gaseous titanium halide, or alternately or in addition thereto a gaseous titanium organometallic precursor, a gaseous compound of the formula Si n H 2n+2 where "n" is an integer greater than or equal to 2, and a carrier gas to within the reactor; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the titanium halide and Si n H 2n+2 to deposit a film on the wafer, the film comprising a titanium silicide, the method being void of use of high intensity light during processing.
Inventors
- 👤 Trung T. Doan
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:06
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/414; H10P14/42; H10P14/43; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
124 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method comprising the following steps: positioning a wafer within the reactor; injecting selected quantities of a gaseous titanium halide, a gaseous compound of the formula Si n H 2n+2 where "n" is an integer greater than or equal to 2, and a carrier gas to within the reactor; and maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the titanium halide and Si n H 2n+2 to deposit a film on the wafer, the film comprising a titanium silicide, the method being void of use of reaction inducing high intensity light during processing.
Claim 2
Dependent Claim
124 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method comprising the following steps: positioning a wafer within the reactor; injecting selected quantities of a gaseous titanium halide, a gaseous compound of the formula Si n H 2n+2 where "n" is an integer greater than or equal to 2, and a carrier gas to within the reactor; and maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the titanium halide and Si n H 2n+2 to deposit a film on the wafer, the film comprising a titanium silicide, the method being void of use of reaction inducing high intensity light during processing.
Claim 3
Dependent Claim
16 words
The chemical vapor deposition method of claim 1 wherein the titanium halide is TiCl 4 .
Claim 4
Dependent Claim
28 words
The chemical vapor deposition method of claim 1 further comprising providing an energy source to the reactor for maintaining the temperature, the energy consisting essentially of thermal energy.
Claim 5
Dependent Claim
23 words
The chemical vapor deposition method of claim 1 wherein n=2, and the selected temperature is from about 400° C. to about 650° C.
Claim 6
Dependent Claim
23 words
The chemical vapor deposition method of claim 1 wherein n=3, and the selected temperature is from about 300° C. to about 650° C.
Claim 7
Dependent Claim
21 words
The chemical vapor deposition method of claim 1 wherein the selected pressure is from about 0.5 Torr to about 30 Torr.
Claim 8
Dependent Claim
35 words
The chemical vapor deposition method of claim 1 wherein n=2, the selected temperature is from about 400° C. to about 650° C., and the selected pressure is from about 0.5 Torr to about 30 Torr.
Claim 9
Dependent Claim
35 words
The chemical vapor deposition method of claim 1 wherein n=3, the selected temperature is from about 300° C. to about 650° C., and the selected pressure is from about 0.5 Torr to about 30 Torr.
Claim 10
Dependent Claim
20 words
The chemical vapor deposition method of claim 1 wherein the titanium silicide of the film is predominately TiSi 2 .
Claim 11
Dependent Claim
126 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method comprising the following steps: positioning a wafer within the reactor; injecting selected quantities of a gaseous titanium organometallic precursor, a gaseous compound of the formula Si n H 2n+2 where "n" is an integer greater than or equal to 2, and a carrier gas to within the reactor; and maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the titanium organometallic precursor and Si n H 2n+2 to deposit a film on the wafer, the film comprising a titanium silicide, the method being void of use of reaction inducing high intensity light during processing.
Claim 12
Dependent Claim
126 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method comprising the following steps: positioning a wafer within the reactor; injecting selected quantities of a gaseous titanium organometallic precursor, a gaseous compound of the formula Si n H 2n+2 where "n" is an integer greater than or equal to 2, and a carrier gas to within the reactor; and maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the titanium organometallic precursor and Si n H 2n+2 to deposit a film on the wafer, the film comprising a titanium silicide, the method being void of use of reaction inducing high intensity light during processing.
Claim 13
Dependent Claim
44 words
The chemical vapor deposition method of claim 10 wherein the titanium organometallic precursor is selected from the group consisting of a compound of the formula Ti(NR 2 ) 4 , where R comprises a carbon containing radical and bis-cyclopentadienyl titanium diazide, or mixtures thereof.
Claim 14
Dependent Claim
28 words
The chemical vapor deposition method of claim 10 further comprising providing an energy source to the reactor for maintaining the temperature, the energy consisting essentially of thermal energy.
Claim 15
Dependent Claim
23 words
The chemical vapor deposition method of claim 10 wherein n=2, and the selected temperature is from about 400° C. to about 650° C.
Claim 16
Dependent Claim
23 words
The chemical vapor deposition method of claim 10 wherein n=3, and the selected temperature is from about 300° C. to about 650° C.
Claim 17
Dependent Claim
21 words
The chemical vapor deposition method of claim 10 wherein the selected pressure is from about 0.5 Torr to about 30 Torr.
Claim 18
Dependent Claim
35 words
The chemical vapor deposition method of claim 10 wherein n=2, the selected temperature is from about 400° C. to about 650° C., and the selected pressure is from about 0.5 Torr to about 30 Torr.
Claim 19
Dependent Claim
35 words
The chemical vapor deposition method of claim 10 wherein n=3, the selected temperature is from about 300° C. to about 650° C., and the selected pressure is from about 0.5 Torr to about 30 Torr.
Claim 20
Dependent Claim
20 words
The chemical vapor deposition method of claim 10 wherein the titanium silicide of the film is predominately TiSi 2 .
Claim 21
Dependent Claim
145 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method comprising the following steps: positioning a wafer within the reactor; injecting selected quantities of a gaseous titanium halide, a gaseous compound of the formula Si n H 2n+2 where "n" is 2 or 3, and a carrier gas to within the reactor; and maintaining the reactor at a pressure of less than or equal to about 100 Torr and at temperature from about 300° C. to about 800° C. which are effective for reacting the titanium halide and Si n H 2n+2 to deposit a film on the wafer, the film comprising titanium silicides of the formulas TiSi, TiSi 2 and Ti 5 Si 3 , the method being void of use of reaction inducing high intensity light during processing.
Claim 22
Dependent Claim
145 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method comprising the following steps: positioning a wafer within the reactor; injecting selected quantities of a gaseous titanium halide, a gaseous compound of the formula Si n H 2n+2 where "n" is 2 or 3, and a carrier gas to within the reactor; and maintaining the reactor at a pressure of less than or equal to about 100 Torr and at temperature from about 300° C. to about 800° C. which are effective for reacting the titanium halide and Si n H 2n+2 to deposit a film on the wafer, the film comprising titanium silicides of the formulas TiSi, TiSi 2 and Ti 5 Si 3 , the method being void of use of reaction inducing high intensity light during processing.
Claim 23
Dependent Claim
147 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method comprising the following steps: positioning a wafer within the reactor; injecting selected quantities of a gaseous titanium organometallic precursor, a gaseous compound of the formula Si n H 2n+2 where "n" is 2 or 3, and a carrier gas to within the reactor; and maintaining the reactor at a pressure of less than or equal to about 100 Torr and at temperature from about 300° C. to about 800° C. which are effective for reacting the titanium organometallic precursor and Si n H 2n+2 to deposit a film on the wafer, the film comprising titanium silicides of the formulas TiSi, TiSi 2 and Ti 5 Si 3 , the method being void of use of reaction inducing high intensity light during processing.
Claim 24
Dependent Claim
147 words
A chemical vapor deposition method of providing a conformal layer of titanium silicide atop a semiconductor wafer within a chemical vapor deposition reactor, the method comprising the following steps: positioning a wafer within the reactor; injecting selected quantities of a gaseous titanium organometallic precursor, a gaseous compound of the formula Si n H 2n+2 where "n" is 2 or 3, and a carrier gas to within the reactor; and maintaining the reactor at a pressure of less than or equal to about 100 Torr and at temperature from about 300° C. to about 800° C. which are effective for reacting the titanium organometallic precursor and Si n H 2n+2 to deposit a film on the wafer, the film comprising titanium silicides of the formulas TiSi, TiSi 2 and Ti 5 Si 3 , the method being void of use of reaction inducing high intensity light during processing.
References Cited (Backward Citations)
US4568565A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-26 | 1998-06-27 | 1998-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-26 | 2002-06-27 | 2002-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-26 | 2006-06-27 | 2006-12-27 | $7700.00 | Window Closed / Lapsed |