Approach to avoid buckling in BPSG by using an intermediate barrier layer

Claim 1

A method for fabricating a semiconductor wafer, comprising the steps of: a) forming a first layer superjacent a semiconductor substrate, said first layer comprising a dielectric; b) forming a film superjacent said first layer, said film having a structural integrity, said film comprising a nitride; c) forming a second layer superjacent said film, said second layer comprising a metal; and d) heating said substrate to cause said first layer and said second layer to uniformly reflow, thereby minimizing buckling.

Claim 2

A method for fabricating a semiconductor wafer, comprising the steps of: a) forming a first layer superjacent a semiconductor substrate, said first layer comprising a dielectric; b) forming a film superjacent said first layer, said film having a structural integrity, said film comprising a nitride; c) forming a second layer superjacent said film, said second layer comprising a metal; and d) heating said substrate to cause said first layer and said second layer to uniformly reflow, thereby minimizing buckling.

Claim 12

A method for reducing the effects of buckling in fabricating a semiconductor wafer, comprising the steps of: a. forming a planarization layer superjacent a semiconductor substrate; b. forming a barrier film superjacent said planarization layer, said barrier film having a structural integrity, said barrier film comprising a dielectric; c. forming a second layer superjacent said barrier film, said second layer comprises metal; and d. heating said substrate to cause said planarization layer to expand according to a first thermal coefficient of expansion, said second layer to expand according to a second thermal coefficient of expansion, while said structural integrity of said barrier film is maintained, thereby enabling said planarization layer and said second layer to uniformly reflow.

Claim 13

A method for reducing the effects of buckling in fabricating a semiconductor wafer, comprising the steps of: a. forming a planarization layer superjacent a semiconductor substrate; b. forming a barrier film superjacent said planarization layer, said barrier film having a structural integrity, said barrier film comprising a dielectric; c. forming a second layer superjacent said barrier film, said second layer comprises metal; and d. heating said substrate to cause said planarization layer to expand according to a first thermal coefficient of expansion, said second layer to expand according to a second thermal coefficient of expansion, while said structural integrity of said barrier film is maintained, thereby enabling said planarization layer and said second layer to uniformly reflow.

Claim 20

A method for fabricating semiconductor wafers resistant to the effects of buckling, comprising the steps of: a. forming a planarization layer superjacent a semiconductor substrate, said planarization layer comprising at least one of tungsten, titanium, tantalum, copper, aluminum, single crystal silicon, polycrystalline silicon, amorphous silicon, borophosphosilicate glass ("BPSG") and tetraethylorthosilicate ("TEOS"); b. forming a barrier film having a structural integrity superjacent said planarization layer by exposing said substrate to a gas and radiant energy, said gas comprising at least one of NH 3 , O 2 , N 2 O, Ar, Ar--H 2 , H 2 , GeH 4 , and a Fluorine based gas, said radiant energy generating heat within the range of 500° C. to 1250° C., said barrier film comprising nitride; c. forming another layer superjacent said barrier film, said another layer comprising at least one of tungsten, titanium, tantalum, copper, aluminum, borophosphosilicate glass ("BPSG") and tetraethylorthosilicate ("TEOS"); d. heating said substrate sufficiently to at least at a temperature of 700° C. to cause said planarization layer to expand according to a first thermal coefficient of expansion, said another layer to expand according to a second thermal coefficient of expansion, and said structural integrity of said barrier film to be maintained, said barrier film isolating said planarization layer from said another layer, thereby preventing said planarization layer and said another layer from interacting during said heating, and enabling said planarization layer and said another layer to reflow uniformly.

Claim 21

A method for fabricating semiconductor wafers resistant to the effects of buckling, comprising the steps of: a. forming a planarization layer superjacent a semiconductor substrate, said planarization layer comprising at least one of tungsten, titanium, tantalum, copper, aluminum, single crystal silicon, polycrystalline silicon, amorphous silicon, borophosphosilicate glass ("BPSG") and tetraethylorthosilicate ("TEOS"); b. forming a barrier film having a structural integrity superjacent said planarization layer by exposing said substrate to a gas and radiant energy, said gas comprising at least one of NH 3 , O 2 , N 2 O, Ar, Ar--H 2 , H 2 , GeH 4 , and a Fluorine based gas, said radiant energy generating heat within the range of 500° C. to 1250° C., said barrier film comprising nitride; c. forming another layer superjacent said barrier film, said another layer comprising at least one of tungsten, titanium, tantalum, copper, aluminum, borophosphosilicate glass ("BPSG") and tetraethylorthosilicate ("TEOS"); d. heating said substrate sufficiently to at least at a temperature of 700° C. to cause said planarization layer to expand according to a first thermal coefficient of expansion, said another layer to expand according to a second thermal coefficient of expansion, and said structural integrity of said barrier film to be maintained, said barrier film isolating said planarization layer from said another layer, thereby preventing said planarization layer and said another layer from interacting during said heating, and enabling said planarization layer and said another layer to reflow uniformly.