US5372950A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming isolation regions in a semiconductor memory device
Assignee: Samsung Electronics Co Ltd
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Filing: 1992-03-04
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Granted: 1994-12-13
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Expires: 2012-03-04
Abstract
Abstract A method for forming an isolation region within a semiconductor device is disclosed. A trench is first formed in a predefined isolation region of a semiconductor substrate. An oxidation blocking material is injected into the inside walls of the trench before growing a field oxide film inside the trench. Accordingly, the present invention can simplify the fabrication of isolation regions within a semiconductor device by directly implanting the oxidation blocking material at a predetermined angle into the inside walls of the trench which constitutes the isolation region. In the present invention, unlike conventional fabrication processes using spacers to prevent penetration of a field oxide film into the surface of semiconductor non-isolation regions, the need for spacers is obviated.
Inventors
- 👤 Yun-gi Kim
- 👤 Cheon-su Bhan
- 👤 Byeong-yeol Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:14
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/0147; H10W10/10; H10W10/13; H10P; H10P14/00; H10P14/60; H10P14/61; H10P30/00; H10P30/20; H10P30/22; H10W10/012; H10W10/0125; Y; Y10; Y10S; Y10S438/00; Y10S438/911
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
47 words
A method for forming an isolation region within a semiconductor device comprising the steps of: forming a trench defining an isolation region in a semiconductor substrate; implanting an oxidation blocking material into an inside wall of said trench; and growing a field oxide film within said trench.
Claim 2
Independent Claim
47 words
A method for forming an isolation region within a semiconductor device comprising the steps of: forming a trench defining an isolation region in a semiconductor substrate; implanting an oxidation blocking material into an inside wall of said trench; and growing a field oxide film within said trench.
Claim 3
Independent Claim
128 words
A method for forming an isolation region within a semiconductor device comprising the steps of: sequentially forming a first oxide film and a first nitride film on a first conductive type semiconductor substrate; applying a photoresist pattern to said first nitride film and then exposing a portion of said semiconductor substrate by sequentially etching said first nitride film and said first oxide film to define a non-isolation region and an isolation region of said semiconductor substrate; forming a trench by etching said exposed portion of said semiconductor substrate; ion-implanting, at a non-vertical angle, an oxidation blocking material into inside walls of said trench; forming a channel-stop layer by implanting a first conductive impurity into a bottom of said trench: and growing a field oxide film within said trench.
Claim 4
Independent Claim
128 words
A method for forming an isolation region within a semiconductor device comprising the steps of: sequentially forming a first oxide film and a first nitride film on a first conductive type semiconductor substrate; applying a photoresist pattern to said first nitride film and then exposing a portion of said semiconductor substrate by sequentially etching said first nitride film and said first oxide film to define a non-isolation region and an isolation region of said semiconductor substrate; forming a trench by etching said exposed portion of said semiconductor substrate; ion-implanting, at a non-vertical angle, an oxidation blocking material into inside walls of said trench; forming a channel-stop layer by implanting a first conductive impurity into a bottom of said trench: and growing a field oxide film within said trench.
Claim 5
Dependent Claim
27 words
The method of claim 2, wherein said step for forming a trench further includes a step of forming an oxide film on inside surfaces of said trench.
Claim 6
Dependent Claim
13 words
The method of claim 2, wherein said oxidation blocking material is a nitride.
Claim 7
Dependent Claim
21 words
The method of claim 4, wherein a concentration of said ion-implanted oxidation blocking nitride is 1×10 16 ions/cm 2 or greater.
Claim 8
Dependent Claim
33 words
The method of claim 2, wherein vertical angle of said ion-implantation process ranges from 10° to 60° from vertical, said slope range varying selectively as a function of a size of said trench.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-12 | 1998-06-13 | 1998-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-12 | 2002-06-13 | 2002-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-12 | 2006-06-13 | 2006-12-13 | $7700.00 | Window Closed / Lapsed |