Patent US5372677A successfully refreshed from Google Patents.
US5372677A
Expired / Lapsed
US
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Method of manufacturing semiconductor devices
Assignee: Kawasaki Microelectronics Inc
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Filing: 1992-12-16
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Granted: 1994-12-13
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Expires: 2012-12-16
Abstract
Abstract After a silicon nitride film (2) is etched by using a first resist pattern (3A) as a mask before coating a second resist (4) superposing on the first resist pattern (3A), a surface layer portion of the first resist pattern (3A) is subjected to a plasma treatment by using oxygen (O 2 ). A properties changed layer in the surface layer portion of the first resist pattern (3A) is removed or modified to improve the adhesion between the second resist (4) and the first resist pattern (3A), and the stripping of the second resist (4) is prevented.
Inventors
- 👤 Satoshi Katayama
- 👤 Kenichi Nitta
- 👤 Katsuhiko Iimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:56
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/73; G; G03; G03F; G03F7/00; G03F7/0035; G03F7/26; G03F7/40; H10P76/00; H10P76/20; H10P76/204; H10P76/2041
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
84 words
A method of manufacturing a semiconductor device comprising the steps of: forming a resist pattern on a film; etching said film with a first plasma in a plasma-etching apparatus using said resist pattern as a mask; removing a top portion of said resist pattern in the plasma-etching apparatus after etching said film, wherein said top portion is removed with a second plasma comprising O 2 gas; and coating a resist on said etched resist pattern after removing the top portion of the resist pattern.
Claim 2
Independent Claim
84 words
A method of manufacturing a semiconductor device comprising the steps of: forming a resist pattern on a film; etching said film with a first plasma in a plasma-etching apparatus using said resist pattern as a mask; removing a top portion of said resist pattern in the plasma-etching apparatus after etching said film, wherein said top portion is removed with a second plasma comprising O 2 gas; and coating a resist on said etched resist pattern after removing the top portion of the resist pattern.
References Cited (Backward Citations)
JPS543473A
Cited
JPS58108744A
Cited
JPS59211231A
Cited
JPS6386434A
Cited
JPH01155625A
Cited
JPH03227010A
Cited
JPH03259528A
Cited
JPH04107915A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-12 | 1998-06-13 | 1998-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-12 | 2002-06-13 | 2002-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-12 | 2006-06-13 | 2006-12-13 | $7700.00 | Window Closed / Lapsed |