Patent US5372648A successfully refreshed from Google Patents.
US5372648A
Expired / Lapsed
US
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Plasma CVD system
Assignee: Panasonic Holdings Corp
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Filing: 1993-04-30
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Granted: 1994-12-13
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Expires: 2013-04-30
Abstract
Abstract A plasma CVD system has a processing chamber having a thin film forming section, and a transfer section communicating with the thin film forming section through a connecting opening. The system includes a thin film forming device, located in the thin film forming section, for producing plasma to form a thin film on a substrate at the connecting opening, a transfer device, located in the transfer section, for bringing a substrate holding member into and out of the processing chamber, and a heat transfer plate which does not project beyond the edge of the substrate when moved into abutment against a rear face of the substrate held by the substrate holding member to move the substrate from the substrate holding member towards the thin film forming section. The heat transfer plate also conducts heat to the substrate.
Inventors
- 👤 Shigeyuki Yamamoto
- 👤 Yuichiro Yamada
- 👤 Ryuzoh Hohchin
- 👤 Hiroshi Tanabe
- 👤 Tomohiro Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:40
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4586; C23C16/56; C23C16/4401; C23C16/48; C23C16/481; C23C16/50; C23C16/505; C23C16/509; C23C16/5093; C23C16/54; C23C16/545
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
149 words
A plasma CVD system comprising: a processing chamber having a thin film forming section and a transfer section communicating with the thin film forming section through a connecting opening; reaction gas introduction piping open to the interior of said thin film forming section; an electrode located in the thin film forming section; a substrate holding member which supports a substrate; a transfer device, located in the transfer section, for bringing the substrate holding member into and out of the processing chamber; a heat transfer plate; and drive means for moving said heat transfer plate into abutment with a rear surface of a substrate held by the substrate holding member so that the heat transfer plate will conduct heat to the substrate and for moving the heat transfer plate from the substrate holding member towards said thin film forming section to move the substrate to the thin film forming section.
Claim 2
Dependent Claim
149 words
A plasma CVD system comprising: a processing chamber having a thin film forming section and a transfer section communicating with the thin film forming section through a connecting opening; reaction gas introduction piping open to the interior of said thin film forming section; an electrode located in the thin film forming section; a substrate holding member which supports a substrate; a transfer device, located in the transfer section, for bringing the substrate holding member into and out of the processing chamber; a heat transfer plate; and drive means for moving said heat transfer plate into abutment with a rear surface of a substrate held by the substrate holding member so that the heat transfer plate will conduct heat to the substrate and for moving the heat transfer plate from the substrate holding member towards said thin film forming section to move the substrate to the thin film forming section.
Claim 3
Dependent Claim
36 words
The plasma CVD system as claimed in claim 1, wherein the heat transfer plate is grounded so as to serve as a lower electrode in opposition to said electrode located in the thin film forming section.
Claim 4
Dependent Claim
25 words
The plasma CVD system as claimed in claim 1, wherein said drive means moves the heat transfer plate to a position occupying the connecting opening.
Claim 5
Dependent Claim
60 words
The plasma CVD system as claimed in claim 3, and further comprising a reaction gas introduction manifold disposed in the thin film forming section and connected to an end of said reaction gas introduction piping, a reaction gas discharge port open to said thin film section, and an inert gas introduction port open to the interior of the transfer section.
Claim 6
Dependent Claim
67 words
The plasma CVD system as claimed in claim 3, and further comprising a reaction gas introduction manifold disposed in the thin film forming section and connected to an end of said reaction gas introduction piping, a reaction gas discharge manifold having a plurality of discharge holes disposed in said thin film forming section, and an inert gas introduction port open to the interior of the transfer section.
Claim 7
Dependent Claim
54 words
The plasma CVD system as claimed in claim 3, and further comprising a reaction gas introduction manifold disposed in the thin film forming section and connected to an end of the reaction gas introduction piping, and a reaction gas discharge manifold having a plurality of discharge holes disposed in said thin film forming section.
Claim 8
Dependent Claim
47 words
The plasma CVD system as claimed in claim 1, wherein said drive means raises the heat transfer plate from the substrate holding member to a position occupying the connecting opening and lowers the heat transfer plate from said position to a position below the substrate holding member.
Claim 9
Dependent Claim
75 words
The plasma CVD system as claimed in claim 1, wherein the heat transfer plate member is grounded so as to serve as a lower electrode in opposition to said electrode located in the thin film forming section, and said drive means raises the heat transfer plate from the substrate holding member to a position occupying the connecting opening and lowers the heat transfer plate from said position to a position below the substrate holding member.
Claim 10
Dependent Claim
87 words
A plasma CVD system comprising: thin film forming means for forming a thin film on a substrate; a substrate holding member which supports a substrate in the system; a heat transfer plate; and drive means for moving said heat transfer plate against a rear surface of substrate held by the substrate holding member so that the heat transfer plate will conduct heat to the substrate and for moving the heat transfer plate to move the substrate from the substrate holding member to the thin film forming means.
Claim 11
Dependent Claim
87 words
A plasma CVD system comprising: thin film forming means for forming a thin film on a substrate; a substrate holding member which supports a substrate in the system; a heat transfer plate; and drive means for moving said heat transfer plate against a rear surface of substrate held by the substrate holding member so that the heat transfer plate will conduct heat to the substrate and for moving the heat transfer plate to move the substrate from the substrate holding member to the thin film forming means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-12 | 1998-06-13 | 1998-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-12 | 2002-06-13 | 2002-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-12 | 2006-06-13 | 2006-12-13 | $7700.00 | Window Closed / Lapsed |