US5371756A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor blue-green laser diodes
Assignee: NEC Corp
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Filing: 1994-01-28
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Granted: 1994-12-06
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Expires: 2014-01-28
Abstract
Abstract A semiconductor blue-green light emitting device in a double heterostructure configuration includes a light emitting layer, a p-type clad layer and an n-type clad layer sandwiching the light emitting layer, a cap layer and a contact layer in this sequence formed on the clad layer. The light emitting layer contains at least one of CdZnSe, ZnSSe, and ZnSe, each of the p-type clad layer and the n-type clad layer contains at least one of ZnSSe, ZnSe and ZnMgSSe, the cap layer is of (Al X Ga 1-X ) 0 .5 In 0 .5 P (0≦X≦1), and the contact layer is of Al X Ga 1-X As (0≦X≦1). The diode provided is with improved ohmic characteristics.
Inventors
- 👤 Hiroaki Fujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:44
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; H01S5/04; H01S5/042; H01S5/0421; H01S5/20; H01S5/22; H01S5/2205; H01S5/2214; H01S5/223; H01S5/2231; H10H20/81; H10H20/816; H10H20/8162; H10H20/822; H10H20/823
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
116 words
A semiconductor blue-green light emitting device in a double heterostructure configuration, comprising: a substrate; a light emitting layer which contains at least one of CdZnSe, ZnSSe, and ZnSe; a p-type clad layer and an n-type clad layer each of which contains at least one of ZnSSe, ZnSe and ZnMgSSe and which are provided at two sides of said light emitting layer, respectively; a cap layer of (Al X Ga 1-X ) 0 .5 In 0 .5 P (0≦X≦1) which is deposited on said clad layer located at an opposite side of said light emitting layer from said substrate; and a contact layer of Al X Ga 1-X As (0≦X≦1) which is deposited on said cap layer.
Claim 2
Dependent Claim
116 words
A semiconductor blue-green light emitting device in a double heterostructure configuration, comprising: a substrate; a light emitting layer which contains at least one of CdZnSe, ZnSSe, and ZnSe; a p-type clad layer and an n-type clad layer each of which contains at least one of ZnSSe, ZnSe and ZnMgSSe and which are provided at two sides of said light emitting layer, respectively; a cap layer of (Al X Ga 1-X ) 0 .5 In 0 .5 P (0≦X≦1) which is deposited on said clad layer located at an opposite side of said light emitting layer from said substrate; and a contact layer of Al X Ga 1-X As (0≦X≦1) which is deposited on said cap layer.
Claim 3
Dependent Claim
26 words
A semiconductor blue-green light emitting device according to claim 1, in which said cap layer and said contact layer are made of organic group V materials.
Claim 4
Dependent Claim
41 words
A semiconductor blue-green light emitting device according to claim 1, which further comprises a dielectric insulating layer which is formed on said contact layer and which has a stripe opening, and a metal electrode which is provided in said stripe opening.
Claim 5
Dependent Claim
51 words
A semiconductor blue-green light emitting device according to claim 1, in which said clad layer disposed at the opposite side of said light emitting layer from the substrate is configured in a mesa stripe with its two side surfaces and two laterally positioned surfaces being covered with dielectric insulating films, respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-05 | 1998-06-06 | 1998-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-05 | 2002-06-06 | 2002-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-05 | 2006-06-06 | 2006-12-06 | $7700.00 | Window Closed / Lapsed |