Patent US5371700A successfully refreshed from Google Patents.
US5371700A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device with covered sidewall spacers
Assignee: Sharp Corp
•
Filing: 1993-08-26
•
Granted: 1994-12-06
•
Expires: 2013-08-26
Abstract
Abstract A present invention provides a semiconductor memory device including a capacitor, in which the capacitor comprises an upper electrode, a lower electrode, a ferroelectric capacitor insulating film disposed between the upper electrode and the lower electrode, and a side wall spacer consisting of an insulating material being formed on the side wall of the lower electrode and/or the ferroelectric capacitor insulating film.
Inventors
- 👤 Kazuyuki Hamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:18
CPC Classifications
H; H10; H10B; H10B53/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
80 words
A semiconductor memory device including a capacitor, in which the capacitor comprises an upper electrode, a lower electrode, a ferroelectric capacitor insulating film disposed between the upper electrode and the lower electrode, said insulating film being completely covered by the upper electrode, and a side wall spacer consisting of an insulating material being formed on the side wall of the lower electrode or the ferroelectric capacitor insulating film and said side wall spacer being completely covered by the upper electrode.
Claim 2
Dependent Claim
80 words
A semiconductor memory device including a capacitor, in which the capacitor comprises an upper electrode, a lower electrode, a ferroelectric capacitor insulating film disposed between the upper electrode and the lower electrode, said insulating film being completely covered by the upper electrode, and a side wall spacer consisting of an insulating material being formed on the side wall of the lower electrode or the ferroelectric capacitor insulating film and said side wall spacer being completely covered by the upper electrode.
Claim 3
Dependent Claim
28 words
The semiconductor memory device according to claim 1, the side wall spacer is deposited on the side wall of the lower electrode and the ferroelectric capacitor insulating film.
Claim 4
Dependent Claim
22 words
The semiconductor memory device according to claim 1, the side wall spacer is deposited on the side wall of the lower electrode.
Claim 5
Dependent Claim
23 words
The semiconductor memory device according to claim 1, the side wall spacer is deposited on the side of the ferroelectric capacitor insulating film.
Claim 6
Dependent Claim
18 words
The semiconductor memory device according to claim 1, the side wall spacer is covered with the upper electrode.
Claim 7
Dependent Claim
71 words
A semiconductor memory device including a capacitor, in which the capacitor comprises an upper electrode, a lower electrode, a ferroelectric capacitor insulating film disposed between the upper electrode and the lower electrode, and a side wall spacer consisting of an insulating material being formed on the side wall of the lower electrode or the ferroelectric capacitor insulating film, wherein the side wall spacer is covered with the ferroelectric capacitor insulating film.
Claim 8
Dependent Claim
71 words
A semiconductor memory device including a capacitor, in which the capacitor comprises an upper electrode, a lower electrode, a ferroelectric capacitor insulating film disposed between the upper electrode and the lower electrode, and a side wall spacer consisting of an insulating material being formed on the side wall of the lower electrode or the ferroelectric capacitor insulating film, wherein the side wall spacer is covered with the ferroelectric capacitor insulating film.
References Cited (Backward Citations)
JPH0414862A
Cited
JPH0482265A
Cited
US5081559A
Cited
JPH04356958A
Cited
US5206788A
Cited
US5216572A
Cited
US5187638A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-05 | 1998-06-06 | 1998-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-05 | 2002-06-06 | 2002-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-05 | 2006-06-06 | 2006-12-06 | $7700.00 | Window Closed / Lapsed |