US5371388A
Expired / Lapsed
US
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Electron wave interference devices, methods for modulating an interference current and electron wave branching and/or combining devices and methods therefor
Assignee: Canon Inc
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Filing: 1994-03-10
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Granted: 1994-12-06
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Expires: 2014-03-10
Abstract
Abstract An electron wave interference device includes a source electrode for injecting electrons therethrough, a drain electrode for taking out electrons therethrough, channel means for propagating electrons from the source electrode to the drain electrode and a gate electrode provided on a halfway portion of the channel means between the source electrode and the drain electrode for dividing the channel means into plural channels solely in the halfway portion of the channel means. A positional relationship between the channel means and the gate electrode is set so that a depletion layer is extended under the gate electrode toward the channel means by applying a given voltage to the gate electrode. The depletion layer extended through the channel means forms an island which inhibits the propagation of electrons in the channel means and thus divides the channel means into the plural channels.
Inventors
- 👤 Hitoshi Oda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:29
CPC Classifications
B; B82; B82Y; B82Y10/00; H; H10; H10D; H10D48/00; H10D48/383
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
265 words
An electron wave interference device having an FET structure, comprising: a source electrode for injecting electrons therethrough; a drain electrode for taking out electrons therethrough; channel means for propagating electrons from said source electrode to said drain electrode, said channel means having a width in a direction perpendicular to a propagating direction of electrons; a gate electrode, having a narrower width than said channel means, provided on a halfway portion of said channel means between said source electrode and said drain electrode, and on an intermediate portion of said channel means in the direction which is perpendicular to a propagating direction of electrons for dividing said channel means into plural channels solely in the halfway portion of said channel means; wherein a positional relationship between said channel means and said gate electrode is set so that a depletion layer is extended under said gate electrode toward said channel means by applying a voltage to said gate electrode, thereby dividing said channel means into the plural channels solely in the halfway portion of said channel means; means for applying a constant magnetic field in the halfway portion of said channel means; and means for applying light to the halfway portion of said channel means; wherein the positional relationship between said channel means and said gate electrode is further set so that the extension of the depletion layer is changed under said gate electrode by changing the light applied to the halfway portion of said channel means to change an area surrounded by the plural channels, thereby changing an interference current detected at the drain electrode side.
Claim 2
Dependent Claim
265 words
An electron wave interference device having an FET structure, comprising: a source electrode for injecting electrons therethrough; a drain electrode for taking out electrons therethrough; channel means for propagating electrons from said source electrode to said drain electrode, said channel means having a width in a direction perpendicular to a propagating direction of electrons; a gate electrode, having a narrower width than said channel means, provided on a halfway portion of said channel means between said source electrode and said drain electrode, and on an intermediate portion of said channel means in the direction which is perpendicular to a propagating direction of electrons for dividing said channel means into plural channels solely in the halfway portion of said channel means; wherein a positional relationship between said channel means and said gate electrode is set so that a depletion layer is extended under said gate electrode toward said channel means by applying a voltage to said gate electrode, thereby dividing said channel means into the plural channels solely in the halfway portion of said channel means; means for applying a constant magnetic field in the halfway portion of said channel means; and means for applying light to the halfway portion of said channel means; wherein the positional relationship between said channel means and said gate electrode is further set so that the extension of the depletion layer is changed under said gate electrode by changing the light applied to the halfway portion of said channel means to change an area surrounded by the plural channels, thereby changing an interference current detected at the drain electrode side.
Claim 3
Dependent Claim
23 words
An electron wave interference device according to claim 1, wherein said channel means comprises a two dimensional electron gas existing in a hetero-boundary.
Claim 4
Independent Claim
189 words
A method for modulating an interference current in an electron wave interference device comprising a source electrode for injecting electrons therethrough, a drain electrode for taking out electrons therethrough, a channel means for propagating electrons from said source electrode to said drain electrode and a gate electrode provided on a halfway portion of said channel means between said source electrode and said drain electrode for dividing said channel means into plural channels solely in the halfway portion of said channels means, said channel means having a width in a direction perpendicular to a propagating direction of electrons and said gate electrode having a narrower width than said channel means in the direction perpendicular to the propagating direction of electrons; said method comprising the steps of: applying a constant magnetic field to the halfway portion of said channel means; and applying a modulated light to the halfway portion of said channel means to change an extension of a depletion layer through said channel means under said gate electrode so that an area surrounded by the plural channels is changed, thereby changing an interference current detected at the drain electrode side.
Claim 5
Independent Claim
189 words
A method for modulating an interference current in an electron wave interference device comprising a source electrode for injecting electrons therethrough, a drain electrode for taking out electrons therethrough, a channel means for propagating electrons from said source electrode to said drain electrode and a gate electrode provided on a halfway portion of said channel means between said source electrode and said drain electrode for dividing said channel means into plural channels solely in the halfway portion of said channels means, said channel means having a width in a direction perpendicular to a propagating direction of electrons and said gate electrode having a narrower width than said channel means in the direction perpendicular to the propagating direction of electrons; said method comprising the steps of: applying a constant magnetic field to the halfway portion of said channel means; and applying a modulated light to the halfway portion of said channel means to change an extension of a depletion layer through said channel means under said gate electrode so that an area surrounded by the plural channels is changed, thereby changing an interference current detected at the drain electrode side.
Claim 6
Dependent Claim
309 words
An optical communication system comprising: a plurality of terminals each of which has a light signal transmitter and a light signal receiver; and an optical fiber connected to said plurality of terminals for transmitting a light signal, wherein the light signal receiver in each of said terminals has a photodetector for detecting the light signal sent from the other terminals, said photodetector comprising: a source electrode for injecting electrons therethrough; a drain electrode for taking out electrons therethrough; channel means for propagating electrons from said source electrode to said drain electrode and having a predetermined width in a direction which is perpendicular to a propagating direction of electrons; and a gate electrode, having a narrower width than said channel means, provided on a halfway portion of said channel means between said source electrode and said drain electrode and on an intermediate portion of said channel means in the direction which is perpendicular to a propagating direction of electrons for dividing said channel means into plural channels solely in the halfway portion of said channel means; wherein a positional relationship between said channel means and said gate electrode is set so that a depletion layer is extended under said gate electrode toward said channel means by applying a voltage to said gate electrode, thereby dividing said channel means into the plural channels solely in the halfway portion of said channel means; means for applying a constant magnetic field to the halfway portion of said channel means; means for applying light to the halfway portion of said channel means; and the positional relationship between said channel means and said gate electrode is further set so that the extension of the depletion layer is changed under said gate electrode by changing the light applied to the halfway portion of said channels, thereby changing an interference current detected at the drain electrode side.
Claim 7
Dependent Claim
309 words
An optical communication system comprising: a plurality of terminals each of which has a light signal transmitter and a light signal receiver; and an optical fiber connected to said plurality of terminals for transmitting a light signal, wherein the light signal receiver in each of said terminals has a photodetector for detecting the light signal sent from the other terminals, said photodetector comprising: a source electrode for injecting electrons therethrough; a drain electrode for taking out electrons therethrough; channel means for propagating electrons from said source electrode to said drain electrode and having a predetermined width in a direction which is perpendicular to a propagating direction of electrons; and a gate electrode, having a narrower width than said channel means, provided on a halfway portion of said channel means between said source electrode and said drain electrode and on an intermediate portion of said channel means in the direction which is perpendicular to a propagating direction of electrons for dividing said channel means into plural channels solely in the halfway portion of said channel means; wherein a positional relationship between said channel means and said gate electrode is set so that a depletion layer is extended under said gate electrode toward said channel means by applying a voltage to said gate electrode, thereby dividing said channel means into the plural channels solely in the halfway portion of said channel means; means for applying a constant magnetic field to the halfway portion of said channel means; means for applying light to the halfway portion of said channel means; and the positional relationship between said channel means and said gate electrode is further set so that the extension of the depletion layer is changed under said gate electrode by changing the light applied to the halfway portion of said channels, thereby changing an interference current detected at the drain electrode side.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-05 | 1998-06-06 | 1998-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-05 | 2002-06-06 | 2002-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-05 | 2006-06-06 | 2006-12-06 | $7700.00 | Window Closed / Lapsed |